113 SOT Search Results

copper bonding wire

Contextual Info: PCN #: 113 Notification Date: 25 May 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages. Extent of Change:

Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4

Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR

MMBT1015

Abstract: MMBT1815
Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4

Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR

transistor fp 1016

Abstract: BFQ34T ON4497 FP 801 UBB361
Contextual Info: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

SMD IC sot23-5 5K

Contextual Info: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE

Contextual Info: 113 Surface M ount Devices Zener Diodes, SOT-23 350mW , Pinout H (cont.) Zener Impedance ^Z (Nom)* @ IZT lR (Max) Temperature Coefficient Zzk (Max) Zr t (Max) *ZK= 0-25mA @VR Type (V) @ <z (mA) ft (mA) (ft) 0vz (Max) (%/°C) (txA) (V) PMBZ5241B PMBZ5242B

TSH110

Abstract: TSH111 TSH112 TSH113 TSH114 TSSOP14 TSH110-TSH111-TSH112-TSH113-TSH114
Contextual Info: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE

PHP18NQ10T

Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
Contextual Info: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America

identification code c3 SOT23-5

Abstract: TSH110 TSH111 TSH112 TSH113 TSH114 TSSOP14
Contextual Info: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE SLEW-RATE: 450V/µs

apx transistor

Contextual Info: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A

BT148

Abstract: thyristor 12V it 1A BT148-400
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company THYRISTOR BT148- 400 TO-126 Plastic Package For use in General Purpose Switching and Phase Control Applications ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE UNIT 400 V half sine wave, Tmb < 113ºC

IEC-870-5-103

Abstract: MSTB 2.5 -5.08 084-CA MINIATURE CIRCUIT BREAKER Breaking capacity abb
Contextual Info: 3URWHFW,7 %UHDNHU SURWHFWLRQ DQG FRQWURO WHUPLQDO 5 % &  1MRK 505 113-BEN Page 1 Revision: – Issued: October 2003 Data subject to change without notice HDWXUHV • Pre-configured protection terminal for costeffective engineering and commissioning

Contextual Info: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.

SOT23-6

Abstract: 02 SOT23-6
Contextual Info: SOT23-6 Thermal Resistance and Derating Information SOT23-6 1.1W devices j-a=113°C/W Maximum Mounted on a FR4 p.c.b. of 50mm x 50mm 2"x2" connected using 25mm x 0.5mm copper wire 100 80 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 100µ 1m 10m 100m 1

newark

Abstract: L054BT26 15KV LR052BT14
Contextual Info: E L E C T R O N I C ESD Protector Application Friday, 18 July 2008 Sirectifier Global Corp., Delaware, U.S.A. Sales Representatives: U.S.A. 113 Barksdale Professional Center in the City of Newark, County of New Castle, Delaware e-mail: sgc@sirectsemi.com China Room 320, Building Chaohui,

Contextual Info: LF PA K 56 BUK7Y113-100E N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101

Contextual Info: LF PA K BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 20 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

Contextual Info: LF PA K 56 BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

Contextual Info: PART NUMBER REV. LDD —S M C 3 0 0 8 R I —SOTR B UNCONTROLLED DOCUMENT 3,75 [0,148] — 000.90 [00,035] 20 PLS. 20 REV. A B 0,80 [0,032] 11 m V m m m m m m m t h E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #113 39 & 11373. E.C.N. #11446. DATE 12.04.06.

BB453

Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
Contextual Info: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V

BTS 129

Abstract: BTS 240 tle 4214 BSP 452 bts 550 BTS 721-L1 BTS 740 s2 bts555p bts 2 2 2 N1 5226
Contextual Info: Overview Low Side Switches in Smart SIPMOS or Smart Power Technology RON mΩ 1 Channel 2 Channel 4 Channel 2 x 800 4 x 8000 500 TLE 5212 G BSP 75 400 TLE 5216 G 2 x 350 2 x 200 TLE 5226 G TLE 5227 G 250 TLE 4224-2 200 BTS 110 170 150 BTS 113 A BTS 112 A

SKH122

Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
Contextual Info: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300