112X4 Search Results

transistor rf s175-28

Abstract: S175-28
Contextual Info: S175-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S175-28 is a 28 V high power transistor designed for linear HF applications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: C E FULL R Ø.125 NOM.

VLB10-12S

Abstract: ASI10734
Contextual Info: VLB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12S is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold Metalization System

VFT150-28

Contextual Info: VFT150-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT150-28 is a gold metallized N-Channel enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° S FU LL R FEATURES:

HF5-12S

Abstract: ASI10591 HF512S
Contextual Info: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP

ASI10735

Abstract: VLB40-12S vhf fm amplifier
Contextual Info: VLB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB40-12S is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD A .112x45° B FEATURES:

MRF492

Abstract: MRF492 data sheet
Contextual Info: MRF492 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF492 is a 12.5 V low band VHF large-signal power amplifier applications in commercial and industrial FM equipment. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 11 dB min. at 70 W/50 MHz

MRF428

Contextual Info: MRF428 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF428 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = -30 dBc max. at 150 W PEP • Omnigold Metalization System

MRF1946a

Abstract: DIC16
Contextual Info: MRF1946A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. PACKAGE STYLE .380" 4L STUD .112x45° FEATURES INCLUDE: C B • High Common Emitter Power Gain • Output Power = 30 W

SD1407

Abstract: 1257 transistor
Contextual Info: SD1407 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 125 W/30 MHz • High linear power output

BLW97

Abstract: TRANSISTOR blw97 2050F
Contextual Info: BLW97 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW97 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 11.5 dB min. at 175 W/30 MHz • IMD3 = -30 dBc max. at 175 W PEP

MRF141

Abstract: MOSFET RF POWER
Contextual Info: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS

MRF315A

Contextual Info: MRF315A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: • PG = 9.0 dB min. at 45 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold Metalization System

ASI10727

Contextual Info: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: ØC 65 V VCEO 35 V VEBO 4.0 V I F E O O O O -65 C to +200 C TSTG -65 C to +150 C

Contextual Info: MRF448 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W PEP

tp9380

Contextual Info: TP93805 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System

MRF234

Abstract: MRF-234
Contextual Info: MRF234 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF234 is Designed for Large-Signal Amplifier Applications to 100 MHz. PACKAGE STYLE .380" 4L STUD .112x45° FEATURES: • Common Emitter C B • Omnigold Metalization System • PG = 9.5 dB min. at 25 W/ 90 MHz

VHB10-12S

Abstract: ASI10713
Contextual Info: VHB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • • • Omnigold Metalization System A B ØC MAXIMUM RATINGS D H J 2.0 A IC G #8-32 UNC-2A VCBO 36 V VCEO 18 V VCES

VMB80-28S

Abstract: ASI10749
Contextual Info: VMB80-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VMB80-28S is Designed for .112x45° A B FEATURES: • • • Omnigold Metalization System ØC D G #8-32 UNC-2A IC 9.0 A VCBO 65 V VEBO I J MAXIMUM RATINGS VCEO H

ASI10612

Abstract: HF150-50F 37ad
Contextual Info: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50F is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W PEP • Omnigold Metalization System FULL R

ASI10601

Abstract: HF8-28S
Contextual Info: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W PEP • Omnigold Metalization System .112x45° A B C E ØC MAXIMUM RATINGS

PT9730

Contextual Info: PT9730 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9730 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 10 dB at 10W/175 MHz • Omnigold Metalization System

BLX39

Contextual Info: BLX39 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 STUD The ASI BLX39 is Designed for broadband amplifier operations up to 175 MHz. .112x45° A B C E FEATURES: ØC • PG = 7.6 dB min. at 40 W/175 MHz • Emitter Resistors Ballasted • Omnigold Metalization System

BLY90

Contextual Info: BLY90 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY90 is Designed for PACKAGE STYLE .380 4L STUD Class A,B and C, 12.5 V High Band Applications up to 175 MHz. .112x45° FEATURES: C B • Common Emitter • PG = 5.0 dB at 50 W/175 MHz • Omnigold Metalization System

Contextual Info: VFT125-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT125-28 is Designed for General Purpose Class A Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A S FU LL R FEATURES: D Ø .125 NO M . C • PG = 11.8 dB Typical at 150 MHz