111N1 Search Results

Contextual Info: TOSHIBA { D IS CR ETE/ OP TO} 9097250 TOSHIBA TOSHIBA "ID DISCRETE/O PTO SEMICONDUCTOR DE [ t OTO SD []01t,;L3fl 7 | ~ 90D 16138 D TOSH I B A G T R M O D U L E M G 1 0 0 H 1 B S 1 TECHNICAL DATA SILICON N C H A N N E L IGBT HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: REVISIONS APPROVED SYM DISCRETION DATE APPROVED 01/JU N /05’ A CONNIE A ‘ ‘ CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! V1.1 I PAGE 1 / 5 I NOTE: THIS DEVICE IS ROHS COMPLIANT. SYM A A DISCRETION NOTE ROHS STANDARD DATE 139.45

Contextual Info: HB56SW872ESN-6B/7B/8B 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 byte DIMM HITACHI ADE-203-560 B (Z) Preliminary Rev. 0.2 Jun. 17,1996 Description The HB56SW872ESN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

diode D83

Abstract: 111N15N 108N15N d83 diode IPP11N15N3 D83 I D83-004 diode 108n15 IEC61249-2-21 PG-TO220-3
Contextual Info: IPB108N15N3 G 111N15N3 G 111N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max (TO263) 10.8 mΩ 83 ID A • Very low on-resistance R DS(on)