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    D040

    Abstract: dd 127 dd 127 d TC59S6408FT
    Contextual Info: TOSHIBA THMY7280D1EG-80H TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		thmy7280d1eg-80hthmy7280d1eg608-word72-bit+4tc59s6408ft409frd040dd 127 dd 127 d PDF

    22 J capacitor

    Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7328100AS/SG is a 8M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 4M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7328100AS/SG is optimized for


    OCR Scan     		gmm7328100as/sggmm7328100asgmm7328100asg111111111il+21111111111il22 j capacitor PDF

    transistor 8331

    Abstract: AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588 AD588AQ AD588JQ AD588SE
    Contextual Info: ANALOG ► DEVICES High Precision Voltage Reference FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Program m able Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense


    OCR Scan     		mil-std-883ad588transistor 8331ad583bd+7ad588bdad588tqrtd with wheatstone bridgek4515ad588aqad588jqad588se PDF