1110 MMIC Search Results

MSA-1110

Abstract: GP 005 mw 137
Contextual Info: Agilent MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block Description The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic high

IFD-53010

Abstract: MSA-1110
Contextual Info: MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75Ω

ZO 410 NF

Contextual Info: MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75Ω

MSA-1110

Abstract: IFD-53010 MSA-11 msa-series
Contextual Info: Products > RF ICs/Discretes > RF ICs > Silicon Amplifiers, Gain Blocks > MSA-1110 MSA-1110 >6V Fixed Gain, High Dynamic Range Amplifier Description Lifecycle status: Active Features The MSA-11 is a high dynamic range 50ohm gain block targeted for narrow and wide

hmc789

Abstract: x-band dro HMC784 HMC764LP6CE mmic AMPLIFIER x-band 10w HMC831LP6C 358 ez 802 E-band mmic HMC82 HMC807LP6CE
Contextual Info: OCTOBER 2009 OFF-THE-SHELF Analog & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Booth #1010 & 1110 See Page 7 for more details 31 New Products Released! Product Showcase 1 Watt Power Amplifi er HMC756 • Saturated Output Power: +33 dBm @ 28% PAE

RW mmic

Abstract: sa 1110
Contextual Info: m MSA-1110 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT PACKARD 100 mil Package Features • • • • • • High Dynamic Range Cascadable 50 £2 or 75 £2 Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz

opto fet

Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
Contextual Info: FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts & MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers

Contextual Info: FEATURES MODEL NO. P35-1110 • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver GaAs MESFET For OPTO Receivers ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE

MSA-1110

Contextual Info: d a ta sh e et HA» *892 Q avantek MSA-1110 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 100 mil Package Features • • • • • • High Dynamic Range Cascadable 50 Q or 75 Q Gain Block

ZO 410 NF

Abstract: GP 005 HP MMIC MSA-1110
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1110 Features • High Dynamic Range Cascadable 50␣ Ω or 75␣ Ω Gain Block • 3␣ dB Bandwidth: 50␣ MHz to 1.6␣ GHz • 17.5 dBm Typical P1␣ dB at 0.5␣ GHz • 12 dB Typical 50␣ Ω Gain at

MSA-1110

Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1110 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical P1 dB at 0.5 GHz • 12 dB Typical 50 Ω Gain at 0.5 GHz • 3.5 dB Typical Noise Figure

Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1110 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical P1 dB at 0.5 GHz • 12 dB Typical 50 Ω Gain at 0.5 GHz • 3.5 dB Typical Noise Figure

Contextual Info: ram H EW LETT f t “EM PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1110 Features • High Dynamic Range Cascadable 50 Q or 75 O Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical Pi dB at 0.5 GHz • 12 dB Typical 50 Q Gain at

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1110 Features • High Dynamic Range Cascadable 50 iio r 75 £1 Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical Pi ¿s at 0.5 GHz • 12 dB Typical 50 Q. Gain at

CT 1061 C 40

Abstract: a4td1 1110 mmic
Contextual Info: M aann A M P ic o m p a n y Silicon Bipolar MMIC Cascadable Amplifier MA4TD1110 V2.00 Features • • • • • • • Gold-Ceram ic Microstrip Package Outline1: High Dynamic Range Cascadable 50£2/75£2 Gain Block 3dB Bandwidth: 50 MHz to 1.3 GHz 17.0 dBm Typical PldB @ 1.0 GHz

Contextual Info: HMC1086F10 v02.0214 Amplifiers - Linear & Power - SMT 25 WATT GaN Flange Mount MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086F10 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 11 dB • General Communications

Contextual Info: HMC1086F10 v04.0714 Amplifiers - Linear & Power - SMT 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086F10 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 11 dB • General Communications

Contextual Info: HMC1086F10 v01.0413 25 WATT GaN Flange Mount MMIC POWER AMPLIFIER, 2 - 6 GHz Amplifiers - Linear & Power - SMT The information provided in this document is for a product controlled by the International Traffic in Arms Regulations ITAR . This product cannot be shipped outside of the United States without a U.S. Department of State export license.

LMIT

Contextual Info: FMS2023 Datasheet v2.3 DC–20 GHZ MMIC LOW LOSS SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Output terminated in 50Ω in off-state Low insertion loss: 1 dB at 20 GHz typical High isolation: 50 dB at 20 GHz typical

DC-10

Abstract: DC-20 FMS2023 FMS2023-000 MIL-HDBK-263 84-1 CONDUCTIVE EPOXY
Contextual Info: FMS2023 Preliminary Datasheet v2.2 DC–20 GHZ MMIC LOW LOSS SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Non-reflective design Low Insertion loss 1 dB at 20 GHz typical Very high isolation 50 dB at 20 GHz typical

DC bias of gaas FET

Abstract: 2771 Amplifier mature 0.5-micron gate length GaAs process
Contextual Info: ^fccôvi Coming Attractions M a n A M P com pany Wide Band GaAs MMIC Amplifier 6 - 1 8 GHz AM46-0006/AM46-0007 V 2.00 AM46-0006 Features • • • • • • 11 dB Typical Gain1 ±0.5 dB Typical Broadband Gain Flatness 0.4 dB Positive Gain Slope Single Bias Supply

DC-10

Abstract: DC-20 FMS2029 FMS2029-000 MIL-HDBK-263 254um
Contextual Info: FMS2029 Preliminary Datasheet v2.1 DC–20 GHZ MMIC SPST NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Both ports Non-Reflective Low Insertion loss 2.2dB at 20 GHz typical Very high isolation 50dB at 20 GHz typical

FMA2029

Contextual Info: FMA2029 Datasheet v2.2 DC–20 GHZ MMIC SPST NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Both ports terminated in 50Ω in off-state Low Insertion loss 2.2dB at 20 GHz typical Very high isolation 50dB at 20 GHz typical

FMM5826X

Abstract: Ka-band ED-4701
Contextual Info: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications