110PFM Search Results

Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing

voltage drop circuit from 220V to 10V

Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This

Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing

Contextual Info: TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs b v dss/ R d S ON b v dgs (max) 18V 2.5Q If Ordering Information Order Number /Package TO-243AA* Dice+ VgS (th)* (max) 250mA 1.0V TN2501N8 TN2501ND ^S creening to 0.8V available. *S am e as SO T-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.