1100NM Search Results

Q62702P0956

Abstract: sfh203fa SFH203 RoHS SFH203
Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH203) und 750nm bis 1100nm (SFH203FA) • Kurze Schaltzeit (typ. 5 ns)

Contextual Info: Ant Series- 9x×nm High Brightness Diode Laser K91SA3F-25.00W-R K94SA3F-25.00W-R K98SA3F-25.00W-R Key Features： Š 25W output power Š 105µm fiber core diameter Š 0.15NA/0.22NA Š 915nm, 940nm, 976nm Wavelength Š 1040nm-1100nm feedback protection Applications：

UDT Pin-6dp

Abstract: UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV
Contextual Info: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output under a variety of

830nm

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 Phone: 714 979-8220 Fax: (714) 557-5989 MXP 1051 – HS Features • • • • • • • Operating Range 400 to 1100nmv Fast response time Low dark currents Low capacitance Wide bandwiths Immune to EMI/RFI Standard packaging fits into standard fiber

650NM photodetector

Abstract: 650nm visible photodetector P3MXP1039
Contextual Info: P3MXP1039 PC/PV Visible Enhanced Photo Detectors SANTA ANA DIVISION PRODUCT PREVIEW Microsemi’s Optomite package is designed for low profile Visual Enhanced Photodetector applications in wavelengths from 400nm to 1100nm. Based on Microsemi’s patented Powermite 3 packaging technology,

ASDL-5880

Abstract: ASDL-5880-C22 ASDL-5880-C31 PIN photodiode sensitivity 850nm
Contextual Info: ASDL-5880 High Speed Photodiode in Top View Package Data Sheet Description Features ASDL-5880 is a Silicon PIN Photodiode encapsulated in clear Top View low profile package. It is ideal for applications from 700nm to 1100nm that require high sensitivity with low dark current and short switching time.

UDT Sensors PSD

Abstract: UDT-555D OSI-515 UDT-020UV cf 455 e 555D UDT-555UV UDT-020D UDT-055UV UDT-455
Contextual Info: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output under a variety of

photodiode 850nm nep

Abstract: 620E
Contextual Info: FCI-XXXA Large Active Area 970nm Si Monitor Photodiodes APPLICATIONS FEATURES  Optical  High Responsivity @ 970nm Active Area Diameter  Spectral Range 400nm to 1100nm  Wide Dynamic Range Communications  Power Measurement  IR Sensing  Medical Devices

osram bpx 65 photodiode

Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant BPX 65 Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 350nm bis 1100nm • Kurze Schaltzeit (typ. 12 ns) • Hermetisch dichte Metallbauform (TO-18), geeignet bis 125 oC

UDT Sensors PSD

Abstract: fast photodiode amplifier UDT photodiode -5 silicon UDT 500 UDT-555D UDT Sensors 555D UDT PIN UDT-020UV Photodiode amplifier ceramic case
Contextual Info: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output

PDINP075500A-0-0-01

Abstract: pigtail pin photodiode ge Si apd photodiode APDS PDINP075100A PDSIU500ST73-T-0 0/PDINP075500A-0-0-01
Contextual Info: PD LD Inc PDXX Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum from 400 to 1100nm, InGaAs is

Infra-red bpx25

Abstract: ZNP102 BPW41D znp100
Contextual Info: SbE » • ^ 7 0 5 7 3 □□□703t. SS3 ■ Z E T B MS-15 INFRA-RED PHOTOCELL 4\ This silicon photocell has been specifically developed for the detection of Infra-red radiation in the wavelength range of 750 to 1100nm. Originally used in conjunction with a Helium Neon laser for

BPX48

Abstract: BPX48F
Contextual Info: B P X 48 B P X 48F SIEM EN S DAYLIGHT FILTER Silicon Differential Photodiode Dimensions in inches mm .307 (7.8)j .291 (7.4) 1 5 9 <4 0 6 > Cathode r\QA _ nrw (6 -. 2 ) .088 (225) FEATURES • Especially suitable for applications - B PX 48:400 to 1100nm - BPX46F: 920 ran

Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH 203 P) und 750nm bis 1100nm (SFH 203 PFA)

SFH213

Abstract: SFH213 FA
Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 213 SFH 213 FA SFH 213 FA SFH 213 Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH 213) und 750nm bis 1100nm (SFH 213 FA) • Kurze Schaltzeit (typ. 5 ns)

MRV pinout

Abstract: RL502 idc 10 pinout
Contextual Info: MRV Communications, Inc. MARVEL SERIES 16 SONET OC-12 FRONT END RECEIVER THE SOURCE FOR YOUR SOURCE 1 of 6 FEATURES - 1100nm to 1600nm Wavelength - Sonet OC-12 Compatible - Single +5V Power supply - Internal AGC Circuit - Wide Dynamic Range - High Sensitivity

Contextual Info: MRV Communications, Inc. MARVEL SERIES 13 SONET OC-3 FRONT END RECEIVER THE SOURCE FOR YOUR SOURCE 1 of 6 FEATURES - 1100nm to 1600nm Wavelength - Sonet OC-3 Compatible - Single +5V Power supply - Internal AGC Circuit - Wide Dynamic Range - High Sensitivity

lichtschranke

Abstract: OHF01034 OHF01773
Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 213 SFH 213 FA SFH 213 FA SFH 213 Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH 213) und 750nm bis 1100nm (SFH 213 FA) • Kurze Schaltzeit (typ. 5 ns)

Contextual Info: 976nm High Brightness Wavelength-Stabilized Diode Laser K98SA3F-25.00W-R-G Key Features： Š Š Š Š Š Š 976nm center wavelength 25W output power 105µm /0.22 N.A. fiber Volume grating wavelength stabilization Narrow linewidth <0.5nm 1040nm-1100nm feedback protection

UDT-455

Abstract: UDT photodiode -5 silicon photodiode high responsivity high shunt resistance silicon pin photodiode laser detection UDT Sensors PSD model UDT-455 UDT Sensors
Contextual Info: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output

Hi-Optel Technology

Contextual Info: 155Mb/s Optical PIN-TIA Module HPDM-03-XXXX ST/FC Receptacle and Pigtailed 155Mb/s, PIN-TIA Features       InGaAs/InP PIN Photodiode Transimpedance AGC for Wide Dynamic Range Wavelength from 1100nm to 1600nm High Sensitivity Low Noise & Low Dark Current

PIN-TIA

Abstract: PIN-TIA 155 PIN-TIA agc
Contextual Info: 155Mb/s Optical PIN-TIA Module HPDM-03-XXXX ST/FC Receptacle and Pigtailed 155Mb/s, PIN-TIA Features: — — — — — — InGaAs/InP PIN Photodiode Transimpedance AGC for Wide Dynamic Range Wavelength from 1100nm to 1600nm High Sensitivity Low Noise & Low Dark Current

Contextual Info: HAMAMATSU TECHNICAL DATA POSITION-SENSITIVE DETECTORS PSD S3270 One-dimensional PSD with long sen sitive area(l X 37mm). Spectral R esponse 700' 1100nm> Visible—cut epoxy window. GENERAL RATINGS P a r a m e te r S p e c t r a l R e sp o n se P eak R e s p o n s e W av eleng th

InGaAs APD photodiode 1550

Abstract: InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin
Contextual Info: PDINBU 45 UM DETECTORS 1100nm to 1650 nm InGaAs PIN Photodiodes PDINBU045G00A-0-0-01 PD-LD offers InGaAs PIN photodiodes with a 45 micron diameter active area that are ideal for use in Channel Monitoring Applications. The detectors exhibit their intrinsically high optical responsivity