10X10X5 Search Results

MWT-LN600

Abstract: LN600
Contextual Info: MwT-LN600 26 GHz Super Low Noise pHEMT Device May 2010 FEATURES APPLICATIONS 0.50 dB Minimum Noise Figure at 12 GHz Excellent Choice for Super Low Noise Applications 8.0 dB Associated Gain at 12 GHz Ideal for Commercial, Military, Hi-Rel Space Applications

SOLAR TRANSISTOR

Abstract: H773
Contextual Info: MwT-H7 32 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744306025 SPEICHERDROSSEL WE-HCM POWER-CHOKE WE-HCM RoHS compliant DATUM / DATE : 2009-01-19 A Mechanische Abmessungen / dimensions :

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744306030 SPEICHERDROSSEL WE-HCM POWER-CHOKE WE-HCM RoHS compliant DATUM / DATE : 2009-01-19 A Mechanische Abmessungen / dimensions :

capacitor 0.33uf x2

Abstract: .0068uf "class x2" capacitor 0.15 .1uf M 275 vac MKP
Contextual Info: MKP Class X2 EMI/RFI Boxed Metallized polypropylene film capacitors Features •   Metallized polypropylene High dvdt Small size   Low self inductance Low ESR   Across the line Antenna coupling Applications   EMI Filter Line by pass

SOLAR TRANSISTOR

Abstract: High Power Microwave Device
Contextual Info: MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE

MwT-16

Abstract: FPH16
Contextual Info: MwT-16 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 CHIP THICKNESS = 125 MICRONS All Dimensions in Microns • 0.5 WATT POWER OUTPUT AT 12 GHz • +39 dBm THIRD ORDER INTERCEPT

Contextual Info: ISL97651 Data Sheet April 24, 2009 4-Channel Integrated LCD Supply Features The ISL97651 represents a high power, integrated LCD supply IC targeted at large panel LCD displays. The ISL97651 integrates a high power, 4.4A boost converter for AVDD generation, an integrated VON charge pump, a VOFF

FPH15

Contextual Info: MwT-H15 38 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • 27 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 52 35 50 35 52 775

Contextual Info: MKP Boxed Metallized Polypropylene Film Capacitors Class X2 EMI/RFI Features Applications Metallized polypropylene – Low self inductance – Small size – High dvdt – Low ESR EMI Filter – Line by-pass – Across the line – Antenna coupling Operating Temperature Range

Contextual Info: FEATURES Small size – Safety Agency approved – Metalized Polypropylene APPLICATIONS EMI filters – Line bypass – Across the line – Antenna coupling Operating Temperature Range Capacitance Tolerance AC voltage 50/60 Hz -40°C to +110°C +10% at 1 kHz, 20°C

Contextual Info: Small size – Safety Agency approved – Metalized Polypropylene FEATURES APPLICATIONS EMI filters – Line bypass – Across the line – Antenna coupling Operating Temperature Range Capacitance Tolerance AC voltage 50/60 Hz -40°C to +110°C +10% at 1 kHz, 20°C

Contextual Info: MwT-16 M ic r o w ave 26 GHz High Power G aAs FET Technology rr • • • • 0.5 W ATT P O W ER OUTPUT AT 12 GHz +39 dBm THIRD O R D E R IN TERCEPT HIGH A S S O C IA T E D G AIN 0.3 M IC R O N R E F R A C T O R Y M ETAL/GO LD G ATE • 900 M IC RO N G A T E WIDTH

Contextual Info: MwT-A7 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y n • • • • • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS 0.3 MICRON REFRACTORY METAUGOLD GATE 250 MICRON GATE WIDTH

Contextual Info: MwT-15 26 GHz Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • +24 dBm POWER OUTPUT AT 12 GHz • 9.5 dB SMALL SIGNAL GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 35 52 35 50 52 775 35

ISL976

Abstract: ISL97651 ISL97651ARTZ-T ISL97651ARTZ-TK TB347
Contextual Info: ISL97651 Data Sheet April 24, 2009 4-Channel Integrated LCD Supply Features The ISL97651 represents a high power, integrated LCD supply IC targeted at large panel LCD displays. The ISL97651 integrates a high power, 4.4A boost converter for AVDD generation, an integrated VON charge pump, a VOFF

capacitor 0.22 uF MKP X2

Abstract: "class x2" capacitor 0.15 iec 60384-14 393m Capacitor 0.027 capacitor MKP X2 IEC 60384-14 1414 MKP x2 105MKP275KG 0.0068UF 104MKP275K
Contextual Info: Class X2 Radial Lead Metallized Polypropylene Capacitors MKP • EMI filter • Antenna coupling • Across the line • Line bypass Operating Temperature Range -40°C to +110°C Capacitance Tolerance ±10% at 1kHz, 25°C Voltage Range 50-60Hz 310 UL, CSA

MwT-LN240

Abstract: super low noise
Contextual Info: MwT-LN240 26 GHz Super Low Noise pHEMT Device May 2010 FEATURES APPLICATIONS 0.5 dB Minimum Noise Figure at 12 GHz Excellent Choice for Super Low Noise Applications 10 dB Associated Gain at 12 GHz Ideal for Commercial, Military, Hi-Rel Space Applications 16 dBm P1dB at 12 GHz

Contextual Info: MwT-A3 I E S I 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y so |4 1.8 dB NOISE FIGURE A T 12 GHZ +20 DBM OUTPUT POWER A T 12 GHZ 11 DB SMALL SIGNAL GAIN A T 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

h770

Abstract: H773
Contextual Info: MwT-H7 28 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE

Contextual Info: Small size – Safety Agency approved – Metalized Polypropylene FEATURES APPLICATIONS EMI filters – Line bypass – Across the line – Antenna coupling Operating Temperature Range Capacitance Tolerance AC voltage 50/60 Hz -40°C to +110°C +10% at 1 kHz, 20°C

MICRON POWER RESISTOR MLS

Abstract: chip die hp transistor
Contextual Info: MwT-A11 14 GHz High Power GaAs FET MICROWAVE TECHNOLOGY J*- 7S +| • • • rn inmmin 101ini r F Ì - 86 -J 1/1 ''I t- 75 J £ Ì - 186 - * N- + 68 mmt m i 343 - 1 • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN

SOLAR TRANSISTOR

Abstract: MwT-H15
Contextual Info: MwT-H15 38 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • 27 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 52 35 50 35 52 775

pdcr 910

Abstract: PDCR 910 series PDCR 900 series PDCR 900 "drum core" AL pdcr 340
Contextual Info: Introduction Purpose ƒ Introduction the WE-PDF Flatwire Inductor series Objectives ƒ Overview the available products ƒ Explain the key features and technical background of Flatwire Technology ƒ explanation flatwire advantages ƒ typical applications Content