10VX1A Search Results

Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

2SB1054

Abstract: 2SD1485
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 (3.5) Solder Dip 16.2±0.5 φ 3.2±0.1 2.0±0.2 1.1±0.1 • Absolute Maximum Ratings TC = 25°C

2SB1156

Abstract: 2SD1707
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features

2SB1156

Abstract: 2SD1707
Contextual Info: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open)

Vbe 8 V

Abstract: ic shelf life low Vce sat PNP transistor 200ma pnp 2SB1156 2SD1707
Contextual Info: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features