10V SMD Search Results

Contextual Info: IC IC MOSFET SMD Type Product specification KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

ja smd

Abstract: IC MOSFET QG smd diode fr
Contextual Info: IC IC SMD Type N-Channel UltraFET Trench MOSFET KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

Contextual Info: Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE D escription The CS8311 is a precision 10V m icropow er voltage regulator w ith very low quiescent current 100//A typ. at 100/iA load . The 10V o u tp u t is accurate w ith in +4% an d supplies

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7460 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Continuous Drain Current, VGS @ 10V,Ta = 25 ID 12 Continuous Drain Current, VGS @ 10V,TA = 70 ID 10 Pulsed Drain Current*1 IDM 100 Power Dissipation Ta = 25

KRF7805Z

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7805Z Features Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TA = 25 Parameter ID 16 Continuous Drain Current, VGS @ 10V,TA = 70 ID 12 Pulsed Drain Current*1 Unit A IDM 120 Power Dissipation Ta = 25

smd diode 44a

Abstract: isd 1710 smd 44A FDB3672 KDB3672 PF247
Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3672 FDB3672 TO-263 Features (Typ.), VGS = 10V, ID =44A +0.1 1.27-0.1 rDS(ON) =24m Qg(tot) = 24nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2

Contextual Info: SMD Type Product specification KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: SMD Type Product specification KDB2572 FDB2572 Features TO-263 Unit: mm (Typ.), VGS = 10V, ID = 9A +0.1 1.27-0.1 rDS(ON) = 45m Qg(tot) = 26nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 Low Miller Charge 5.60 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1

Contextual Info: SMD Type Product specification KDB3682 FDB3682 TO-263 Features (Typ.), VGS = 10V, ID =32A +0.1 1.27-0.1 rDS(ON) =32m Qg(tot) = 18.5nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

FDB2552

Abstract: KDB2552
Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB2552 FDB2552 Features Unit: mm (Typ.), VGS = 10V, ID = 16A +0.1 1.27-0.1 rDS(ON) = 32m TO-263 Qg(tot) = 39nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2

Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

smd transistor g1

Abstract: g1 smd transistor smd transistor S1 mosfet vgs 5v smd diode S2 g1 smd diode MOSFET TSSOP-8 dual n-channel smd transistor 7a G1 C smd MOSFET TSSOP-8
Contextual Info: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KO8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

Contextual Info: MOSFET SMD Type N-Channel MOSFET KX7N10L SOT-223 ● V DS V = 100V Unit: mm +0.2 3.50-0.2 +0.2 -0.2 0.1max +0.05 0.90-0.05 6.50 ● ID = 1.7 A (V GS = 10V) ● RDS(ON) ＜ 350mΩ (VG S = 10V), ID=0.85A +0.1 3.00-0.1 +0.15 1.65-0.15 • Features +0.2 0.90-0.2

smd diode 44a

Abstract: smd 44A
Contextual Info: SMD Type Product specification KDB3672 FDB3672 TO-263 Features (Typ.), VGS = 10V, ID =44A +0.1 1.27-0.1 rDS(ON) =24m Qg(tot) = 24nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

KI9410DY

Abstract: sop-8 smd type mosfet smd
Contextual Info: MOSFET SMD Type N-Channel 30-V D-S MOSFET KI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) D D D D ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) G S S N/C 1 8 D S 2 7 D S 3

Contextual Info: KEMET Part Number: T491A155K010AT Capacitor, Tantalum, SMD, MnO2, Molded, 1.5 uF, 3216, +/-10% Tol, 10V@85C General Information Supplier: KEMET Part Type Description: SMD, MnO2, Molded Construction: Standard Chip-MnO2 Specifications Capacitance: Voltage DC @ 85C:

Contextual Info: KEMET Part Number: T491C107M010AT Capacitor, Tantalum, SMD, MnO2, Molded, 100 uF, 6032, +/-20% Tol, 10V@85C General Information Supplier: KEMET Part Type Description: SMD, MnO2, Molded Construction: Standard Chip-MnO2 Specifications Capacitance: Voltage DC @ 85C:

Contextual Info: KEMET Part Number: T491B686M010AT Capacitor, Tantalum, SMD, MnO2, Molded, 68 uF, 3528, +/-20% Tol, 10V@85C General Information Supplier: KEMET Part Type Description: SMD, MnO2, Molded Construction: Standard Chip-MnO2 Specifications Capacitance: Voltage DC @ 85C:

Contextual Info: KEMET Part Number: T491D227M010AT Capacitor, Tantalum, SMD, MnO2, Molded, 220 uF, 7343, +/-20% Tol, 10V@85C General Information Supplier: KEMET Part Type Description: SMD, MnO2, Molded Construction: Standard Chip-MnO2 Specifications Capacitance: Voltage DC @ 85C:

Contextual Info: BZG03C. Vishay Telefunken Silicon Z-Diodes Features • Glass passivated junction • High reliability • Voltage range 10V to 270V • Fits onto 5 mm SMD footpads • Wave and reflow solderable Applications Voltage stabilization Absolute Maximum Ratings

telefunken ta 750

Contextual Info: BZG03C. Vishay Telefunken Silicon Z-Diodes Features • Glass passivated junction • High reliability • Voltage range 10V to 270V • Fits onto 5 mm SMD footpads • Wave and reflow solderable Applications Voltage stabilization Absolute Maximum Ratings

diode BZG03C 33

Abstract: diode BZG03C BZG03C
Contextual Info: BZG03C. Vishay Telefunken Silicon Z–Diodes Features D D D D D Glass passivated junction High reliability Voltage range 10V to 270V Fits onto 5 mm SMD footpads Wave and reflow solderable 15 811 Applications Voltage stabilization Absolute Maximum Ratings

BZG03C

Abstract: BZG03C10
Contextual Info: BZG03C. Vishay Telefunken Silicon Z–Diodes Features D D D D D Glass passivated junction High reliability Voltage range 10V to 270V Fits onto 5 mm SMD footpads Wave and reflow solderable 15 811 Applications Voltage stabilization Order Instruction Type Ordering Code

smd diode 46A

Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Contextual Info: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25