10V 50MA ZERO VOLTAGE SWITCH Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS 2N7002X SOT-89-3L MOSFET N-Channel 11 2 2 3 3 FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

2N2907AUB

Contextual Info: FT2N2907AUB SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR Features: Applications: • • • • • • • • Hermetically sealed High Reliability Miniature, ceramic surface mount package MIL-PRF-19500 screening available Analog Switch Small Signal Amplifier

FT2N

Contextual Info: FT2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR Features: Applications: • • • • • • • • Hermetically sealed High Reliability Miniature, ceramic surface mount package MIL-PRF-19500 screening available Analog Switch Small Signal Amplifier

Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage

Contextual Info: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M MOSFET N-Channel D WBFBP-03B (1.2x1.2×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching

Contextual Info: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ・ESD Protected 2000V. A ・High density cell design for low RDS ON . ・Voltage controlled small signal switch. ・Rugged and reliable.

Contextual Info: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K

10V 50mA zero voltage switch

Abstract: M7002TTD03
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate MOSFET M7002TTD03 MOSFET N-Channel D WBFBP-03A (1.6x1.6×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 3 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: Small Signal MOSFET Transistor Features: • • • • SOT-23 High Density Cell Design For Low RDS ON Voltage Controlled Small Switch Rugged and Reliable High Saturation Current Capability Applications: • N-channel enhancement mode effect transistor

k72 transistor

Abstract: transistor k72 2N7002T n-channel enhancement mosfet
Contextual Info: 2N7002T N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES     High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate MOSFETS M7002TTD03 MOSFET N-Channel D WBFBP-03A (1.6x1.6×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 3 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

10V 50mA zero voltage switch

Abstract: Mosfet 1 cell switch low voltage low resistance
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET M7002NND03 MOSFET N-Channel D WBFBP-03B (1.2x1.2×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching

2N7002K

Contextual Info: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. E B L L High density cell design for low RDS ON . D Voltage controlled small signal switch. 2 A G Rugged and reliable.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

2N7002K

Abstract: 2N7002k wc
Contextual Info: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. E B L L High density cell design for low RDS ON . D Voltage controlled small signal switch. 2 A G Rugged and reliable.

2n7000 equivalent

Abstract: 2N7000 EQUIVALENT FOR 2N7000 DSV10
Contextual Info: SEMICONDUCTOR 2N7000 TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C High density cell design for low RDS ON . A Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.

2N7000N

Contextual Info: SEMICONDUCTOR 2N7000 TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C ・High density cell design for low RDS ON . A ・Voltage controlled small signal switch. ・Rugged and reliable. ・High saturation current capablity.

Contextual Info: SEMICONDUCTOR 2N7002 TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS ON . E B L L Voltage controlled small signal switch. 2 A H 1 P Drain-Source Voltage VDSS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFETS M7002NND03 MOSFET N-Channel D WBFBP-03B (1.2x1.2×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching

Contextual Info: SEMICONDUCTOR 2N7000 TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C High density cell design for low RDS ON . A Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.