10V 50MA ZERO VOLTAGE SWITCH Search Results

Contextual Info: 5HN01M N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

Contextual Info: 5HN01SS N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

5HN01C

Contextual Info: 5HN01C N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

Contextual Info: 5HN01N N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

Contextual Info: 3LP01C P- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS 2N7002X SOT-89-3L MOSFET N-Channel 11 2 2 3 3 FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

2N2907AUB

Contextual Info: FT2N2907AUB SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR Features: Applications: • • • • • • • • Hermetically sealed High Reliability Miniature, ceramic surface mount package MIL-PRF-19500 screening available Analog Switch Small Signal Amplifier

FT2N

Contextual Info: FT2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR Features: Applications: • • • • • • • • Hermetically sealed High Reliability Miniature, ceramic surface mount package MIL-PRF-19500 screening available Analog Switch Small Signal Amplifier

Contextual Info: BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002T FEATURES z Low on-resistance. z Low gate threshold voltge. z Low input capacitance. z Fast switching speed. z Low input/output leakage. Pb Lead-free APPLICATIONS z N-channel enhancement mode effect transistor.

Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage

LX5 transistor

Contextual Info: Regulators ICs for Digital Cameras and Camcorders System Switching Regulator IC with Built-in FET 10V BD8355MWV No.11036EAT20 ●Description BD8355MWV is a system switching regulator for Li 2 cell composed of 6 step-down synchronous rectification channels and

LX5 transistor

Abstract: NR3015T330M LX7 transistor DEM4518 DEM3518C
Contextual Info: BD8355MWV Regulators ICs for Digital Cameras and Camcorders System Switching Regulator IC with Built-in FET 10V BD8355MWV No.11036EAT20 ●Description BD8355MWV is a system switching regulator for Li 2 cell composed of 6 step-down synchronous rectification channels and

LX5 transistor

Contextual Info: Regulators ICs for Digital Cameras and Camcorders System Switching Regulator IC with Built-in FET 10V No.11036EAT20 BD8355MWV ●Description BD8355MWV is a system switching regulator for Li 2 cell composed of 6 step-down synchronous rectification channels and

Contextual Info: BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 FEATURES z High Density Cell Design For Low RDS ON 。 Pb z Voltage Controlled Small Switch. z Rugged and Reliable. z High Saturation Current Capability. Lead-free APPLICATIONS

2N7002 60V SOT-23

Abstract: 2n7002 bl galaxy 2N7002 SOT-23 2N7002 mosfet 2n7002 sot-23 MARKING CODE 21 2N7002 MARKING Small Signal MOSFET 2N7002- SOT23 MOSFET TRANSISTOR K 135 mosfet
Contextual Info: BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 FEATURES z High Density Cell Design For Low RDS ON 。 Pb z Voltage Controlled Small Switch. z Rugged and Reliable. z High Saturation Current Capability. Lead-free APPLICATIONS

Contextual Info: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

2N7002 MARKING

Abstract: N7002 N-700-2 2N7002 X2N7002 2N7002 v02 RG252
Contextual Info: N-Channet Enhancement-Mode MOS Transistor CORPORATION \J 2N7002 DESCRIPTION ORDERING INFORMATION Calogic's 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown Bv and

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M MOSFET N-Channel D WBFBP-03B (1.2x1.2×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching

Contextual Info: 3VD045060JL 3VD045060JL N-channel MOSFET CHIPS DESCRIPTION Ø 3VD045060JL is a N-Channel enhancement mode 2 MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø High density cell design for low RDS ON Ø Rugged and reliable. Ø Fast switching performance.

Contextual Info: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ・ESD Protected 2000V. A ・High density cell design for low RDS ON . ・Voltage controlled small signal switch. ・Rugged and reliable.

Contextual Info: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K

2N7000

Abstract: 2n7000k
Contextual Info: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K

10V 50mA zero voltage switch

Abstract: M7002TTD03
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate MOSFET M7002TTD03 MOSFET N-Channel D WBFBP-03A (1.6x1.6×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching