10R1C Search Results

Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)

2-10R1C

Abstract: GT10J303 igbt 300V 10A
Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)

Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)

15j301

Abstract: transistor 15j301 GT15J301 2-10R1C
Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage

TOSHIBA IGBT DATA BOOK

Abstract: transistor R1A r1a transistor 10R1A 10R1B 2-10R1A
Contextual Info: Transistor Outline Package New Isolated Type TO–220NIS Package Outline Dimensions Outline Dimensions Unit: mm 2.7 ±0.2 10.0 ±0.3 5.6 max 1.1 1.1 0.75 ±0.15 2.54 ±0.25 15.0 ±0.3 13.0 min 3.9 3.0 φ3.2 ±0.2 2 3 0.75 ±0.15 4.5 ±0.2 1 2.6 2.54 ±0.25

GT15J301

Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. (IC = 15A) l Low Saturation Voltage

gt10j303

Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation. l Enhancement−Mode. l High Speed. l Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)

10j303

Abstract: IGBT Guide GT10J303 Toshiba c
Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)

GT15J301

Abstract: TOSHIBA IGBT
Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage

2-10R1C

Abstract: 5J301 GT5J301 Toshiba c
Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage

Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage

Contextual Info: GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 170A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT15G101

Contextual Info: GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT5J301

Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)

transistor R1A

Abstract: r1a transistor 10R1A 10R1B
Contextual Info: Transistor Outline Package New Isolated Type TO–220NIS パッケージ 外形図 パッケージ形状および寸法 単位 : mm 2.7 ±0.2 10.0 ±0.3 5.6 max 1.1 1.1 0.75 ±0.15 2.54 ±0.25 15.0 ±0.3 13.0 min 3.9 3.0 φ3.2 ±0.2 2 3 0.75 ±0.15 4.5 ±0.2