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10Q
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Beijing Yunike Electronic Components
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Electromechanical Filter 10.7 MHz BPF, 2 dB IL, 0.5 dB Inband ripple |
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21.81KB |
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10Q3
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
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136.56KB |
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10Q4
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Unknown
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Catalog Scans - Shortform Datasheet |
Scan |
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112.88KB |
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10-Q-65
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Storm Products
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TERMINATOR |
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PDF
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57.27KB |
2 |
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10QB
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Beijing Yunike Electronic Components
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Electromechanical Filter 10.7 MHz BPF, 2.5 dB IL, 1 dB Inband ripple |
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21.81KB |
1 |
SA10QA04
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode with 20 to 40V peak repetitive reverse voltage, 1.0A average rectified output current, low forward voltage drop, and typical junction capacitance of 110pF at 1MHz. |
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EC10QS04
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode EC10QS03-EC10QS10 with 1.0 A average rectified current, 30-100 V peak repetitive reverse voltage, low forward voltage drop of 0.50 to 0.85 V at 1.0 A, and non-repetitive surge current up to 30 A. |
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EC10QS03
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode with 1.0 A average rectified current, 30 to 100 V peak repetitive reverse voltage, low forward voltage drop of 0.50 to 0.85 V at 1.0 A, and SMA/DO-214AC package. |
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SA10QA02
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode with 20 to 40V peak repetitive reverse voltage, 1.0A average rectified output current, low forward voltage drop, and typical junction capacitance of 110pF at 1MHz. |
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HIRP3010Q20-B30
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CT Micro International Corporation
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SMD type 850nm infrared emitter with peak wavelength of 850nm, radiant intensity of 1.0 to 7.0 mW/sr, viewing angle ±65 degrees, and forward voltage of 1.30 to 1.56V, designed for infrared sensing and light barrier applications. |
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RM21110Q10GA
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JWD
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RM2 series RJ45 connectors support 10/100/1000/2.5/5G Ethernet, feature RoHS compliance, 260°C peak wave solder rating, 1500Vrms isolation, and options for LED indicators and EMI shielding. |
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RM11110Q10GA
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JWD
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RM1 series RJ45 connectors support 10/100, 1G, 2.5/5G, and 10G Ethernet, feature RoHS compliance, 260 °C peak wave solder rating, integrated magnetics, LED options, and meet IEEE 802.3 isolation standards with durability rated at 750 insertions. |
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AW13510QNR
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Shanghai Awinic Technology
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0.1-3.8GHz SP10T Diversity Switch with MIPI |
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EC10QS10
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode EC10QS series with 1.0A average rectified current, 30-100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 1.0A, and operating temperature range from -65 to +125°C. |
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EC10QS08
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode in SMA/DO-214AC package, 1.0 A average rectified current, 30 to 100 V peak repetitive reverse voltage, low forward voltage drop of 0.50 to 0.85 V at 1.0 A, operating junction temperature from -65 to +125 °C. |
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SL65N10Q
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SLKOR
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EC10QS03L
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode EC10QS03L with 30V repetitive peak reverse voltage, 1.0A average rectified forward current, low forward voltage drop, and operating junction temperature from -40 to +150°C. |
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EC10QS06
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode in SMA/DO-214AC package, 1.0A average rectified current, 30V to 100V peak repetitive reverse voltage, 0.50V to 0.85V forward voltage at 1.0A, operating junction temperature from -65°C to +125°C. |
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SA10QA03
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode with 20 to 40V peak repetitive reverse voltage, 1.0A average rectified output current, low forward voltage drop, and fast reverse recovery time, housed in SOD-123FL package. |
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PDF
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SL60N10Q
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SLKOR
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N-Channel Power MOSFET, VDS 100V, ID 60A, RDS(ON) < 11.5mΩ at VGS=10V, < 15mΩ at VGS=4.5V, DFN5x6 package. |
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SA10QA04
