10OFXA Search Results

Contextual Info: UC1914 UC2914 UC3914 UNITRODE 5V to 35V Hot Swap Power Manager PRELIMINARY FEATURES DESCRIPTION • The UC3914 family of Hot Swap Power Managers provides complete power man­ agement, hot swap and fault handling capability. Integrating this part and a few ex­

4040D 4.1

Abstract: 4040C 4040D 4041c diode schottky sot-23
Contextual Info: _ LM4040/4041_ Precision Micropower Shunt Voltage Reference Preliminary Information General Description Features Ideal for space critical applications, the LM4040 and LM4041 precision voltage references are available in the sub-miniature 3mm x 1.3mm SOT-23 surface-mount package, the

2N3906

Abstract: TRANSISTOR KJ
Contextual Info: AL L E GR O M I C R O S Y S T E M S INC ^3 D • 05014336 Q 0 0 3 b b 3 S ■ ALGR r - 9 i ~o\ P R O C E S S BTB Process BTB PNP Switching Transistor The Process B T B transistor is a double-diffused epitaxial planar device with a gold diffusion. It is primarily used in general-purpose switching and am­

SIEMENS 3 TB 40 17 - 0A

Abstract: SIEMENS 3 TB 40 12 - 0A
Contextual Info: SIEMENS 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module HYM64V1005GU-50/-60 HYM72V1005GU-50/-60 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module for PC main memory applications

S87C51FA-4N40

Abstract: 83C51 87C51FA 80C51 87C51 8XC51 8XC51FA S87C51FA-4A44
Contextual Info: N A P C / P H I L I P S SEMICON] b'lE ]> • b b S a ^ S H O D I I I H I 78B « S I C S Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION FEATURES The 83C51FA and 87C51FA hereafter generically referred to as 8XC51 FA)

Contextual Info: £ jJ S G S -T H O M S O N 0 » IIL IM W 1 § § M 27C 256B CMOS 256K (32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: w - SCS-THOMSON k7#» IM [MDi[LI STnMDKOD©i> M28F101 1 Mb (128K x 8, Chip Erase FLASH MEMORY • ■ ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10^is typical ELECTRICAL CHIP ERASE in 1s RANGE

Contextual Info: fg] High-Speed CMOS 3.3V qs74lcxi6h952 16-Bit Bus Register T ransceiver w ith BUS Hold S e m ic o n d u c t o r ,I n c . FEATURES/BENEFITS DESCRIPTION • 5V tolerant inputs and outputs • Industry standard pinout • Bus Hold feature holds last active state during

folded cascode second stage

Contextual Info: r r i m LT1495/LT1496 m TECHNOLOGY 1,5|i A Max, Dual and Quad Precision Rail-to-Rail Input and Output Op Amps F6RTUR6S D€SCRIPTIOn • Low Supply Current: ^.5\\AMax ■ Rail-to-Rail Input and Output ■ Low Offset Voltage: 375^.V Max n p p u c m io n s The LT 1495/LT1496 are the lowest power Is < 1.5nA op

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JU LY 1997 FEATURES * C o m p a ct package * L o w on state losses * L o w d rive re q u ire m e n ts * O perates up to 40V s u p p ly * 2 A m p c o n tin u o u s ra tin g PARTM ARKING DETAIL - ZHB6790

Contextual Info: INTEGRATED CIRCUITS 74ALVT16373 2.5V/3.3V 16-bit transparent D-type latch 3-State Product specification Supersedes data of 1996 May 29 IC23 Data Handbook Philips Semiconductors 1998 Feb 13 PHILIPS Philips Semiconductors Product specification 2.5V/3.3V 16-bit transparent D-type latch (3-State)

Contextual Info: S G S -1 H 0 M S 0 N M28F151 [^ a g ^ ( Q g L [i W ( Q ) R { ]D © S 1.5 Megabit (192K x 8, Chip Erase) FLASH MEMORY PRODUCT PREVIEW • VALID MEMORY ADDRESS SPACE: OOOOOh to 2FFFFh ■ FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp.

hlmp7019

Abstract: HLMP-7040 hlmp7000 HLMP-7019
Contextual Info: [îXJ SUBMINIATURE T% LOW CURRENT 2 MA DIFFUSED LAMPS OPTOELECTRONICS AIGaAs RED HLMP-Q150 HIGH EFF. RED YELLOW HLMP‘7019 HIGH EFF. GREEN PACKAGE DIMENSIONS HLMP-7000 HLMP-7040 DESCRIPTION These subminature lamps are constructed as axial leaded devices. High brightness chips; such as AIGaAs

400MI

Contextual Info: SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR ISSU E 3 - OCTOBER 1995_ O FEATURES * * Low equivalent on-resistance; RCE sati 400m£i at 1A 1 A m p continuous current * Ptot= 500 m W C O M P L E M E N T A R Y TYPE P A R T M A R K IN G D E T A IL -