10NS Search Results

IS61C5128AL

Abstract: IS61C5128AS-25QLI IS61C5128AL-10KLI IS61C5128AL-10TLI IS61C5128AS-25TLI 64C5128AS
Contextual Info: IS61C5128AL/AS IS64C5128AL/AS 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64C5128AL • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS)

Contextual Info: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter

t0606

Contextual Info: O rdering num ber : EN1920A SB 10-05 NO.1920A Schottky Barrier Diode 50V, 1A Rectifier A p p lic a tio n s • High frequency rectification switching regulators, converters, choppers F e a tu r e s • Low forward voltage (Vp = 0.55V max) • Fast reverse recovery time (trr = 10ns max)

Contextual Info: Ordering number : EN1921A SB005-09CP N 0. I 9 2 I A Schottky Barrier Diode 90V, 50mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • Low forward voltage (Vp = 0.7V max) • Fast reverse recovery time (trr = 10ns max)

DIP-20

Abstract: M74HC245 M74HC245B1R M74HC245M1R M74HC245RM13TR M74HC245TTR M74HC245B1
Contextual Info: M74HC245 OCTAL BUS TRANSCEIVER WITH 3 STATE OUTPUTS NON INVERTED • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 10ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

74HC643

Abstract: DIP-20 M74HC643 M74HC643B1R M74HC643M1R M74HC643RM13TR M74HC643TTR
Contextual Info: M74HC643 OCTAL BUS TRANSCEIVER WITH 3 STATE OUTPUTS INVERTING/NON INVERTING • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 10ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

DN74LS10

Abstract: MA161
Contextual Info: I LS TTL DN74LS Series DN74LS10 DN74LS10 T riple 3 - input P o sitiv e NAND Gates • Description D N 74LS10 contains three 3-input positive isolation NAND gate circuits. ■ Features • • • • Low pow er consum ption P,j = 6mW typical High speed ( tpd = 10ns typical)

C1608

Abstract: 22nk C1608-22NK C1608-100
Contextual Info: STANDARD Series C1608 & C2012 SERIES C1608 C1608-10NS C1608-12NS C1608-15NS C1608-18NS C1608-22NK C1608-27NK C1608-33NK C1608-39NK C1608-47NK C16Ö8-56NK C1608-68NK C1608-82NK C1608-100* C1608-120* C1608-150* C1608-180* C1608-220* C1608-270* C1608-330* C1608-390*

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet May 21, 2007 www.aeroflex.com/radhardsram INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

UT8ER

Abstract: UT8ER512K
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices

UT8R512K8

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet November 9, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state

Contextual Info: Standard Products UT8R256_16 256K x 16 SRAM Advanced Data Sheet August 21, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state

Contextual Info: CMP0417AAx-E CMOS LPRAM Document Title 256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add tCP=10ns in AC characteristics Minor Changes Mar. 10th, 2004

Contextual Info: 32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT FEATURES: IDT49C460 IDT49C460A IDT49C460B IDT49C460C IDT49C460D IDT49C460E DESCRIPTION: • Fast Detect 10ns max. 12ns (max.) 16ns (max.) 25ns (max.) 30ns (max.) 40ns (max.) Correct 14ns (max.) 18ns (max.)

Contextual Info: CMOS SUPERSYNC FIFO 8 ,1 9 2 x 1 8 ,1 6 ,3 8 4 x 1 8 FEATURES: • • • • • • • • • • • • • • • • 8,192 x 18-bit storage capacity IDT72255 16,384 x 18-bit storage capacity (IDT72265) 10ns read/write cycle time (8ns access time)

49C466

Contextual Info: 64-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT IDT49C466 IDT49C466A FEATURES: DESCRIPTION: • 64-bit wide Flow-thruEDC • Separate System and Memory Data Input/Output Buses • — Error Detect Time: 10ns — Error Correct Time: 15ns • Corrects all single bit errors; Detects all double bit errors

Contextual Info: Integrated Device Technology, Inc. BiCMOS StaticRAM 240K 16Kx15-BIT CACHE-TAG RAM For PowerPC and RISC Processors PRELIMINARY IDT71216 This high-speed M A T C H signal, with tADM times as fast as 10ns, provides the fastest possible enabling of secondary

Contextual Info: PRELIMINARY IDT72V275 IDT72V285 3.3 VOLT CMOS SUPERSYNC FIFO 32,768 X 18 65,536 X 18 FEATURES: • Choose among the following memory organizations: IDT72V275 32,768x18 IDT72V285 65,536x18 • Pin-compatible with the IDT72V255/72V265 SuperSync FIFOs • 10ns read/write cycle time 6.5ns access time

DN74LS02

Contextual Info: I LS TTL DN74LS Series DN74LS02 DN74LS02 Quad 2 - input P o sitiv e NOR G ates • Description DN74LS02 contains four 2-input positive isolation NOR gate circuits. ■ • • • • P-1 Features Low power consumption P,j = 1 lmW typical High speed ( tpd = 10ns typical)

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

DN74LS10

Abstract: MA161
Contextual Info: LS TTL DN74LS Series DN74LS10 DN74LS10 bio74-LSto T riple 3 - input P o sitiv e NAND Gates • Description D N 74LS10 contains three 3-input positive isolation NAND gate circuits. ■ Features • • • • Low pow er consum ption Pd = 6mW typical High speed ( tpd = 10ns typical)

atmel 432

Contextual Info: AT40K05AL, AT40K10AL AT40K20AL, AT40K40AL 5K – 50K Gates Coprocessor FPGA with FreeRAM SUMMARY DATASHEET Features  Ultra High Performance ̶ ̶ System Speeds to 100MHz Array Multipliers > 50MHz 10ns Flexible SRAM Internal Tri-state Capability in Each Cell

Contextual Info: Ordering number : EN3614B SB05-03C Schottky Barrier Diode http://onsemi.com 30V, 0.5A, Low IR, Single CP Applications • • Universal-use rectifier High frequency rectification switching regulators, converters, choppers Features • • • • • Fast reverse recovery time (trr max=10ns)