10MVN Search Results

Contextual Info: Philips Semiconductors Product specification Unity gain level programmable low power compandor NE/SA577 DESCRIPTION PIN CONFIGURATION The NE/SA577 is a unity gain level programmable compandor designed for low power applications. The NE577 is internally configured as an expandor and a compressor to minimize external

Contextual Info: LOW POWER NAROW BAND FM IF NJM3357 NJM3357 includes Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control, and Mute Switch. The NJM3357 is designed for use in FM dual conversion communication equipment. Package Outline

2sk433

Abstract: 2SK43-3 CC OWV W
Contextual Info: <FIELD-EFFECT TRANSISTOR 2SK433 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION OUTLINE DRAWING 2SK433 is a super mint outline resin sealed silicon N channel 2.S -0.3 junction type FET. It is designed for low frequency voltage amplify,application,

Triac TAG 9022

Abstract: Transistor TEO 1279 DIL Reed relay RS -349-399 AKO 544 271 tda 7977 Triac TAG 9031 RS 434-396 TV SHARP IC TDA 9381 PS hall marking code A04 px625
Contextual Info: Issued November 1986 7376 r Contents list and semiconductor device type index data Data library contents Issue Date Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system 'Minimaster 3' 2+10 telephone switching system

fsca

Abstract: KIA4558P circuits KIA6076F AM SW1 sw2 IC ta KIA4558P
Contextual Info: KEC SEMICONDUCTOR I TECHNICAL DATA KO R EA E L E C T R O N IC S CO.,ltd. KIA6076F BIPOLAR LINEAR INTEGRATED CIRCUIT 1.5V F M S T E R E O M U L T IP L E X T h e K IA 6076F is F M P L L IC d esig n ed for low v o lta g e o p eratio n 1.5V , w h ich is su itab le

RMS-to-DC Converter

Abstract: 442J Model 442J 7c2 5t 442L AC1016
Contextual Info: ANALOG DEVICES Wideband, High Accuracy True RMS-to-DC Converter FEA TUR ES Dc to 8M H z Response -3dB High Accuracy: With Mo Ext. Trim : ±2m V ±0.15% of Rdg., max With Ext. Trim : ±1m V ±0.05% of Rdg., max Low D rift: ± (35/uV ±0.01% of R eading)/’C max, 442L