10K RESISTORS Search Results

MO-220-VGGC

Abstract: AD8206 AD8212 AD628 AD629 AD8202 AD8203 AD8205 AD8270 AD8273
Contextual Info: OUT2 –VS FUNCTIONAL BLOCK DIAGRAM 16 15 14 13 AD8270 –IN1 1 10k 10k 10k 10k 12 –IN2 10k 10k 10k 10k 10k 10k –IN1 2 20k 5 20k 10 +IN2 9 +IN2 20k 6 7 8 REF2 20k REF2 +IN1 4 REF1 +IN1 3 11 –IN2 REF1 With no external resistors: Difference Amplifier: Gains: 0.5, 1, 2

AD8212

Abstract: circuit diagram of instrumentation amplifier MO-220-VGGC AD628 AD629 AD8202 AD8203 AD8205 AD8206 AD8270
Contextual Info: OUT2 –VS FUNCTIONAL BLOCK DIAGRAM 16 15 14 13 AD8270 –IN1 1 10k 10k 10k 10k 12 –IN2 10k 10k 10k 10k 10k 10k –IN1 2 20k 5 20k 10 +IN2 9 +IN2 20k 6 7 8 REF2 20k REF2 +IN1 4 REF1 +IN1 3 11 –IN2 REF1 With no external resistors: Difference Amplifier: Gains: 0.5, 1, 2

AD8476-EVALZ

Abstract: AD8476 RG 56 AD8476BRMZ
Contextual Info: 5 –OUT 6 NC 7 –VS 8 INP 10kΩ 10kΩ AD8476 10195-001 +OUT 4 VOCM 3 +VS 2 10kΩ NOTES 1. NC = NO CONNECT. DO NOT CONNECT TO THIS PIN. 13 –VS 14 –VS 15 –VS Figure 1. 8-Lead MSOP INP 1 INP 2 INN 3 12 NC 10kΩ 10kΩ 11 –OUT AD8476 10kΩ 10 +OUT

ETH1-460L

Abstract: SMBJ64A
Contextual Info: 5 4 3 2 1 REVISION HISTORY NOTE: UNLESS OTHERWISE SPECIFIED 1. ALL RESISTORS ARE IN OHMS, 0603. ALL CAPACITORS ARE IN MICROFARADS, 0603. 2. INSTALL SHUNTS AS SHOWN. R1 75 VDD TP2 DATA IN R7 10K R6 10K 9 10 1 2 R4 75 SS-7188S-A-NF R8 R9 10K SW1 10K SDA SCL

NTE2355

Abstract: NPN Transistor TO92 40V 200mA NTE2356
Contextual Info: NTE2355 NPN & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit

Contextual Info: DTA114E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 10kΩ 10kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC014E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 10kΩ 10kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

AD8476-EVALZ

Abstract: AD8476ARMZ
Contextual Info: 5 –OUT 6 NC 7 –VS FUNCTIONAL BLOCK DIAGRAM 10kΩ 10kΩ 10kΩ AD8476 NOTES 1. NC = NO CONNECT. DO NOT CONNECT TO THIS PIN. 10195-001 +OUT 4 VOCM 3 10kΩ +VS 2 Very low power 330 A supply current Fully differential or single-ended inputs/outputs Differential output designed to drive precision ADCs

Contextual Info: DTA014E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 10kΩ 10kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

FBMH4532HM132-T

Abstract: SS-7188S-A-NF 749022016 749012013 11CT3 FDMC86102 j337 SS-7188SANF R1751 SMAJ58A
Contextual Info: 5 4 3 2 1 REVISION HISTORY NOTE: UNLESS OTHERWISE SPECIFIED 1. ALL RESISTORS ARE IN OHMS, 0603. ALL CAPACITORS ARE IN MICROFARADS, 0603. 2. INSTALL SHUNTS AS SHOWN. R1 75 VDD TP2 DATA IN R7 10K R6 10K 9 10 1 2 R4 75 R3 75 J2 SS-7188S-A-NF RESET R8 R9 10K SW1

133S

Abstract: Q62702-C2376
Contextual Info: BCR 133S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistors (R1=10kΩ, R2=10kΩ) Type Marking Ordering Code Pin Configuration

ecl 10K

Abstract: RCD Components E1001 E1004 E1008 E103 E105 SCHEMAT
Contextual Info: PRELIMINARY ECL DIGITAL DELAY LINES -5-41-5 - ECL 10K INTERFACED -5-41-5 - ECL 100K INTERFACED FEATURES TYPE E105 - ECL 10K 5 TAP Tap Delay nS 3 20 4 25 5 30 6 2X Total Delay Pulse Spacing 5X Total Delay -1.0V provided by open emitter ECL 10K gate

2SA1344

Abstract: FC115
Contextual Info: Ordering number:EN3083 FC115 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions • On-chip bias resistors R1=10kΩ, R2=10kΩ · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SC3398

Abstract: FC114
Contextual Info: Ordering number:EN3082 FC114 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions • On-chip bias resistors R1=10kΩ, R2=10kΩ · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SA1344

Abstract: FC113
Contextual Info: Ordering number:EN3081 FC113 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions • On-chip bias resistors R1=10kΩ, R2=10kΩ · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SC3398

Abstract: EN3084 FC116
Contextual Info: Ordering number:EN3084 FC116 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions • On-chip bias resistors R1=10kΩ, R2=10kΩ · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

HD2X3-079

Abstract: HD2X7-079-MOLEX HD2X20-100 LTC1799CS5 74HC74P r60 kim HD2X20 ADR43 74HC74PW PIC16LF877A-I
Contextual Info: 5 4 3 2 1 RB5/CS D R3 10K 3 SET DIV 4 R4 22.1 R6 22.1 C5 0.1 R7 14K R10 102K R8 10K R9 10K SYSTEM_RST# VCCA 3 EN DIS JP3 WD 7 WT RST 6 WDI 5 RE0/BOARD_DETECT 27 RE2/CS 26 RE1/WR 25 RE0/RD VSS 8 RT U3 LTC1726EMS8-2.5 RX/RC7 TX/RC6 MOSI/RC5 MISO/RC4 SCK/RC3

DPM 160

Abstract: DPM 2000 ICL 7129 Application Notes TA 7136 p DPM 343 DPM 50 zener DIODE 8069 DPM 702s 7129 digital multimeter diagram DPM951
Contextual Info: 4 ICl 7660 4 3 5 1M 13 7 AD5 95 11 8 12 3 9 1 14 0V Panel Instrument Application Notes Issue 2 V +10 10µ 10µ 10K 1M 10µ DPM COM REF REF LO 10K 10µ 10µ 10K 20K -5V VDD V + VSS (V-) IN H IN L I O +5V ICL 8069 ICL 8069 2k2 +5V Index INSTALLATION & OPERATION - Section A

Contextual Info: DTA013Z series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 1.0kΩ 10kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC043X series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 4.7kΩ 10kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = 4.7kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC013Z series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 1.0kΩ 10kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

2.5-V Devices

Abstract: apex display resistor 10k t flex 440 EP20K100 EP20K1000E EP20K200 EP20K400 EP20K400E EP20K600E
Contextual Info: Configuring APEX 20K, FLEX 10K & FLEX 6000 Devices December 1999, ver. 1.02 Introduction Application Note 116 APEXTM 20K, FLEX® 10K, and FLEX 6000 devices can be configured using one of six configuration schemes, which are ideal for a variety of systems.

DTA114E

Abstract: SC-85 DTA114EUB DTA114E SERIES
Contextual Info: DTA114E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GN GN DTA114EM DTA114EEB (SC-89) (SC-105AA) EMT3 Features

pulse

Abstract: 10K100 s100
Contextual Info: PCN RESISTORS Diagram of pulse energy and power derating BVS power [W] 1M 100k 100k 1k 10k 100 10M 1k 10 100 1 10 0.1 1 1 s 10 s 100 s 1 ms 10 ms pulse width PCN Corporation 100 ms 1s Yokohama Business Office 10 s 100 s power [W] pulse energy [J] 10k PCN RESISTORS