10H600 Search Results

IGCT thyristor ABB

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 Doc. No. 5SYA 1226-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

IGCT abb

Abstract: ka 70 05
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control

ABB Semiconductors

Abstract: RCD snubber
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

Abb diode 6000 A

Contextual Info: Key Parameters VRRM = 6000 IFAVM = 1100 IFRMS = 1700 IFSM = 18 VF0 = 1.50 rF = 0.6 VDClink = 3800 V A A kA V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA 1109-02 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses

RCD snubber

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V Fast Recovery Diode 5SDF 10H6004 mΩ V Doc. No. 5SYA 1109-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

abb gto characteristic

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

IGCT thyristor ABB

Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

H600

Abstract: MC100H600 MC100H600FN MC10H600 MC10H600FN
Contextual Info: 10H600, MC100H600 9-Bit TTL to ECL Translator The MC10H/100H600 is a 9–bit, dual supply TTL to ECL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.

diode sy 170

Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.

H600

Abstract: MC100H600 MC100H600FN MC10H600 MC10H600FN
Contextual Info: 10H600, MC100H600 9−Bit TTL to ECL Translator The MC10H/100H600 is a 9−bit, dual supply TTL to ECL translator. Devices in the ON Semiconductor 9−bit translator series utilize the PLCC−28 for optimal power pinning, signal flow−through and electrical performance.

bistable multivibrator using ic 555

Abstract: CBM 4080 mc10116fn 10H351 10h115 MC1658 10h350 MC10197-D G2Q16 MC68824
Contextual Info: DL122/D Rev. 7, Mar-2000 ON Semiconductor MECL Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

FSV 052

Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.