10H60 Search Results

IGCT thyristor ABB

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 Doc. No. 5SYA 1226-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs

Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection 2 2 1 1 MBR10Hxx

MBR10H35

Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency

10H60

Abstract: 10H35 MBR10H35
Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection 2 2 1 1 MBR10Hxx

MBR10H35

Abstract: 10H60 JESD22-B102 J-STD-002
Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency

10h60

Abstract: MBR10H35
Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency

Contextual Info: M M O TO R O LA Military 10H609 Dual 4-5-Input OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8756901 MP0 The 10H609 is a Dual 4-5-input OR/NOR gate. • Propagation Delay Average, 0.75 ns Typical // / / / / / • 180 mW Max/Pkg (No Load) • Improved Noise Margin 150 mV (Over Operating Voltage and Temperature

MBR10H35

Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop

IGCT abb

Abstract: ka 70 05
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control

IGCT thyristor ABB

Abstract: HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 900 7.5x103 1.65 2 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6010 PRELIMINARY Doc. No. 5SYA1226-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

ABB Semiconductors

Abstract: RCD snubber
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

Abb diode 6000 A

Contextual Info: Key Parameters VRRM = 6000 IFAVM = 1100 IFRMS = 1700 IFSM = 18 VF0 = 1.50 rF = 0.6 VDClink = 3800 V A A kA V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA 1109-02 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses

RCD snubber

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V Fast Recovery Diode 5SDF 10H6004 mΩ V Doc. No. 5SYA 1109-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

Contextual Info: ^ M O T O R O L A Military 10H609 Dual 4-5-Input OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8756901 The 10H609 is a Dual 4-5-input OR/NOR gate. • Propagation Delay Average, 0.75 ns Typical • 180 mW Max/Pkg (No Load) • Improved Noise Margin 150 mV (Over Operating Voltage and Temperature

abb gto characteristic

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

10h60

Abstract: MBR10H35
Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency

MBR10H35

Contextual Info: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency

IGCT thyristor ABB

Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

H600

Abstract: MC100H600 MC100H600FN MC10H600 MC10H600FN
Contextual Info: 10H600, MC100H600 9-Bit TTL to ECL Translator The MC10H/100H600 is a 9–bit, dual supply TTL to ECL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.

Q425

Abstract: MC100H601 MC100H601FN MC10H601 MC10H601FN
Contextual Info: 10H601, MC100H601 9-Bit ECL to TTL Translator The MC10H/100H601 is a 9–bit, dual supply ECL to TTL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.