10D25 Search Results

Contextual Info: M ir “ O n N I 256K DRAM MODULE X 36, 512K X 10D25636 18 DRAM MODULE 256K x 36, 512K x 18 FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS M T 10D25636M /G Itmmrrrm^ „ iïrmrrmrrrri^ ^ MARKING • Timing 60ns access 70ns access 80ns access -

Contextual Info: 10D25636 256K X 36, 512K x 18 DRAM MODULE M IC R O N DRAM MODULE 256K x 36, 512K x 18 FAST PAGE MODE FEATURES • • • p ackage H ig h -p erfo rm an ce, C M O S silico n -g a te process. S in g le 5 V ± 1 0 % p o w er sup p ly A ll d e v ice p in s a re fu lly T T L co m p atib le

Contextual Info: GAL22V10 Lattice High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FEATURES FUNCTIONAL BLOCK DIAGRAM HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.5 ns Maximum from Clock Input to Data Output

ICC-427

Contextual Info: M IC R O N 256K DRAM X 10D25640 40 DRAM M ODULE 256K x 40 DRAM _ MOD ULF L / V / I— ! — I V I W FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CMOS silicon-gate process. Single 5V ±10% power supply All device pins are fully TTL compatible

XF0153-HPCMC3

Contextual Info: 2. Schem atic: 1. M e c h a n ic a l D im e n s i o n s : 1 o- -o 3 2 o- -o 4 3. E l e c t r i c a l S p e c i f i c a t i o n s : @ 2 5 °C OCL: 1 5 m H ± 3 0 % @ 10KHz 0.0 5 V DCR: 290 mOhms Each Wdg. Max, Each Wdg. LL: Pins 1 - 2 220uH Max @100KHz, 0.1V Short Pins 3 - 4