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Contextual Info: 2SB1237 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA MEDIUM POWER TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Features. * Low VCE,;^, , VCE^ggjj =-0.2V Typ.) (Ic/Ib=-500mA/-50mA) * Complement to 2SD1858 ABSOLUTE M AXIMUM RATINGS at Tinr*=25°C |
OCR Scan |
2sb1237-500ma/-50ma2sd185810ctao+4 |