10AUG2006 Search Results

STTH

Abstract: AV900
Contextual Info: STTH8L06 Turbo 2 ultrafast high voltage rectifier Features K • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ Package insulation voltage: – TO-220AC Ins: 2500 V rms – TO-220FPAC: 2000 V DC

STTH30

Contextual Info: STTH30L06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ K A Reduces switching and conduction losses D2PAK STTH30L06G Description The STTH30L06, which is using ST Turbo 2 600 V

block code error management, verilog source code

Abstract: NAND01GW3A2B-KGD NAND01GW4A2B-KGD NAND01GWxA2B-KGD
Contextual Info: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1Gbit x8/x16 , 528 Byte/264 Word Page, 3V, NAND Flash Memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications

STTH12R06G

Abstract: STTH12R06G-TR STTH12R06 STTH12R066G-TR STTH12R06D STTH12R06DI STTH12R06DIRG STTH12R06FP T125
Contextual Info: STTH12R06 Turbo 2 ultrafast high voltage rectifier Main product characteristics IF AV 12 A VRRM 600 V IRM (typ) 7A Tj 175° C VF (typ) 1.4 V trr (max) 25 ns K K A TO-220AC STTH12R06D A K TO-220FPAC STTH12R06FP Features and benefits K • Ultrafast switching

p50ne1

Contextual Info: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P Description t c e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t

Contextual Info: STTH12R06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching losses ■ Package insulation voltage: TO220AC ins: 2500 VRMS TO-220FPAC: 2000 VDC K K A A

SOT23-5 MARKING V4

Abstract: opa 275
Contextual Info: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER

LVDS to MIPI DSI

Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
Contextual Info: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories

STW4N150

Abstract: STP4N150 TO-247 st 0560 L30 diode part marking st 393 STMicroelectronics DIODE marking code JESD97 W4N150
Contextual Info: STP4N150 STW4N150 N-channel 1500V - 5Ω - 4A - TO-220/TO-247 Very high PowerMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances

STP4N150

Abstract: 4N150 STFW4N150 STW4N150 W4N150
Contextual Info: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID 1500 V <7Ω 4A STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A STFW4N150 (1) 3 1 2 2 TO-220 TO-247 1. All data which refers solely to the TO-3PF package is

F3HNK90Z

Abstract: P3HNK90Z STP3HNK90Z JESD97 STF3HNK90Z
Contextual Info: STP3HNK90Z STF3HNK90Z N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP3HNK90Z 900 V < 0.42 Ω 3A STP3HNK90Z 900 V < 0.42 Ω 3A 3 • Extremely high dv/dt capability

STLC2590

Abstract: E-STLC2590 fm radio control interface BT-12
Contextual Info: STLC2590 Bluetooth EDR and RDS FM radio tuner Data Brief Bluetooth features • The lowest power consumption by design and technology see Table 1 ■ World best EDR throughput (see Table 1) ■ World most performing BT-WLAN coexistence support for several BT-WLAN coexistence

Contextual Info: ADS5444 www.ti.com SLWS162A – AUGUST 2005 – REVISED FEBRUARY 2006 13-BIT 250 MSPS ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • • 13-Bit Resolution 250 MSPS Sample Rate SNR = 69 dBc at 100-MHz IF and 250 MSPS

F3NK80Z

Abstract: 9565 p3nk80z D3NK8 D3NK80Z STD3NK80Z STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z
Contextual Info: STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z

Contextual Info: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories

Contextual Info: STG3699B Low voltage 0.5 Ω max, quad SPDT switch with break-before-make feature Features • High speed: – tPD = 1.5 ns typ. at VCC = 3.0 V – tPD = 1.5 ns (typ.) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 0.2 µA (max.) at TA = 85°C

p50ne1

Abstract: P50NE10 p50ne STP50NE10
Contextual Info: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization

4n150

Abstract: P4N150 STP4N150 STW4N150 W4N150 jedec package TO-220 JESD97 STFV4N150 STFW4N150
Contextual Info: STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type VDSS RDS on max ID STFV4N150 STFW4N150 (1) STP4N150 STW4N150 1500 V 1500 V 1500 V 1500 V <7Ω <7Ω <7Ω

MDDI 1.2

Abstract: MDDI 1.5 MSM MDDI MDDI SOT-666 JESD97 MDDI host
Contextual Info: DSILC6-4P6 ESD Protection for high speed interface Main applications Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O3 VCC Computers Printers Communication systems Cell phone handsets and accessories

D3NK8

Abstract: P3NK80Z D3NK f3nk80z f3nk80 p3nk80 F3NK8 d3nk80 D3NK80Z STF3NK80Z
Contextual Info: STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-channel 800V - 3.8Ω - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET General features • Type VDSS @Tjmax RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω

SIP7 package

Abstract: DCH01 DCH010505D DCH010505S DCH010512D DCH010512S DCH010515D DCH010515S SR-332
Contextual Info: DCH01 Series www.ti.com SBVS073C – MAY 2006 – REVISED AUGUST 2006 MINIATURE, 1W, 3kV ISOLATED UNREGULATED DC/DC CONVERTERS FEATURES DESCRIPTION • • • • • The DCH01 series is a family of miniature, 1W, 3kV isolated DC/DC converters. Featured in an industry

Contextual Info: ADS5440 www.ti.com SLAS467A – JULY 2005 – REVISED DECEMBER 2005 13-BIT 210 MSPS ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • • 13-Bit Resolution 210 MSPS Sample Rate SNR = 69 dBc at 100-MHz IF and 210 MSPS

M58LT128HB

Abstract: M58LT128HT CR10 VFBGA56 026h
Contextual Info: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

STTH806DIRG

Abstract: Turbo2 600 V st 393 STTH806 STTH806D STTH806DI STTH806G STTH806G-TR
Contextual Info: STTH806 Turbo 2 ultrafast - high voltage rectifier Main product characteristics A K K IF AV 8A VRRM 600 V Tj 175° C VF (typ) 1.1 V trr (max) 35 ns A NC D2PAK STTH806G Features and benefits A • Ultrafast switching ■ Low reverse current ■ Low thermal resistance