10A 600V MOS Search Results

f11nm60

Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
Contextual Info: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V

F12NM60N

Abstract: STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

P12NM60

Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

TOSHIBA Thyristor

Abstract: SF10J41A SF10G41A f10g41
Contextual Info: SF10G41A, SF10J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G41A, SF10J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V,600V Repetitive Peak Reverse Voltage: VRRM = 400V,600V Average On−State Current: IT AV = 10A

10JL2CZ47A

Contextual Info: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A

10JL2CZ47

Contextual Info: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A

2SK2761

Abstract: mosfet 10a 600v 2SK2761-01MR
Contextual Info: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

FDPF*10N60NZ

Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
Contextual Info: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

AOTF10N60

Contextual Info: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

2SK2761

Contextual Info: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

Contextual Info: FU JI 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V 10A 50W Outline Drawing > Features - IQ High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications

2SK2761-01MR

Abstract: 2SK2761
Contextual Info: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

AOTF10N60L

Abstract: AOTF10N60
Contextual Info: AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

AOTF10N60

Abstract: AOT10N60
Contextual Info: AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

p10nk60zfp

Abstract: p10nk60 STB10NK60Z STB10NK60Z-1 STP10NK60Z STP10NK60ZFP STW10NK60Z p10nk60z VDD480V
Contextual Info: STB10NK60Z/-1 - STP10NK60Z/FP STW10NK60Z N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH MOSFET General features Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z Package VDSS RDS on ID Pw 600 600 600 600

Contextual Info: Bulletin I2196 12/04 QUIETIR Series 20ETF06FPPbF FAST SOFT RECOVERY RECTIFIER DIODE VF Lead-Free "PbF" suffix < 1.2V @ 10A IFSM = 300A VRRM = 600V Description/ Features The 20ETF06FPPbF soft recovery QUIETIR rectifier series has been optimized for combined

20ETF

Abstract: 20ETF06FP
Contextual Info: Bulletin I2196 12/04 QUIETIR Series 20ETF06FPPbF FAST SOFT RECOVERY RECTIFIER DIODE VF Lead-Free "PbF" suffix < 1.2V @ 10A IFSM = 300A VRRM = 600V Description/ Features The 20ETF06FPPbF soft recovery QUIETIR rectifier series has been optimized for combined

Contextual Info: AP3990P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP3990 series are specially designed as main switching devices for universal

Contextual Info: Bulletin I2204 03/05 QUIETIR Series 10ETF06SPbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1.2V @ 10A trr = 50ns VRRM = 600V Description/ Features The 10ETF06SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined

P10NK60ZFP

Abstract: p10nk60z ST T4 0560 p10nk60 W10NK60Z B10NK60Z transistor P10NK60ZFP stp10nk60zfp 59 L2 zener stp10
Contextual Info: STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1 STW10NK60Z • ■ ■ ■ ■ ■ VDSS RDS on 600 600 600 600 600

Contextual Info: Bulletin I2189 12/04 QUIETIR Series 20ETF06PbF FAST SOFT RECOVERY RECTIFIER DIODE VF Lead-Free "PbF" suffix < 1.2V @ 10A IFSM = 300A VRRM = 600V Description/ Features The 20ETF06PbF fast soft recovery QUIETIR rectifier series has been optimized for combined

10ETF

Abstract: 10ETF06S AN-994 SMD-220
Contextual Info: Bulletin I2204 03/05 QUIETIR Series 10ETF06SPbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1.2V @ 10A trr = 50ns VRRM = 600V Description/ Features The 10ETF06SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined

20ETF

Abstract: 20ETF06S AN-994 SMD-220
Contextual Info: Bulletin I2207 03/05 QUIETIR Series 20ETF06SPbF SURFACE MOUNTABLE FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.2V @ 10A IFSM = 300A Lead-Free "PbF" suffix VRRM = 600V Description/Features The 20ETF06SPbF soft recovery rectifier QUIETIR series has been optimized for combined