10A 600A DC DIODE Search Results
10A 600A DC DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
| MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
| MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
10A 600A DC DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
k08T120Contextual Info: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D |
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IKW08T120 BUP305D k08T120 | |
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Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
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IKP10N60T | |
k08T120
Abstract: IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
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IKW08T120 BUP305D k08T120 IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04 | |
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Contextual Info: TRENCHSTOP Series IKP10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s |
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IKP10N60T | |
K10T60
Abstract: IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A
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IKP10N60T K10T60 IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A | |
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Contextual Info: TRENCHSTOP Series IKB10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s |
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IKB10N60T | |
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Contextual Info: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
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IKB10N60T | |
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Contextual Info: IKA10N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s |
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IKA10N60T | |
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Contextual Info: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D |
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IKW15T120 BUP313D | |
k10t60
Abstract: diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A
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IKA10N60T PG-TO-220-3-31 O-220 k10t60 diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A | |
k10t60Contextual Info: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs |
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IKA10N60T k10t60 | |
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Contextual Info: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs |
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IKA10N60T | |
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Contextual Info: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C |
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IKA10N60T | |
k10t60
Abstract: Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681
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IKP10N60T IKB10N60T P-TO-220-3-1 O-220AB) Oct-04 k10t60 Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681 | |
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MJ-06
Abstract: Q67040-S4681
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IKB10N60T MJ-06 Q67040-S4681 | |
K15T120
Abstract: K15T120 igbt IKW15T120 BUP313D PG-TO-247-3
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IKW15T120 BUP313D K15T120 K15T120 igbt IKW15T120 BUP313D PG-TO-247-3 | |
K08T120
Abstract: PG-TO-247-3-21 k08t12 5M MARKING CODE DIODE 5A 100V IKW08T120
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IKW08T120 K08T120 PG-TO-247-3-21 k08t12 5M MARKING CODE DIODE 5A 100V IKW08T120 | |
IKP10N60T
Abstract: IKP10N60T IGBT k10t60
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IKP10N60T PG-TO-220-3-1 O-220AB) IKP10N60T IGBT k10t60 | |
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Contextual Info: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
Original |
IKB10N60T | |
k10t60Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
Original |
IKP10N60T PG-TO-220-3-1 k10t60 | |
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Contextual Info: IKP20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s |
Original |
IKP20N60T | |
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Contextual Info: IKW20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s |
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IKW20N60T | |
H20T120
Abstract: IHW20T120 2R210 rg-35
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IHW20T120 H20T120 IHW20T120 2R210 rg-35 | |
k10t60Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
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IKP10N60T k10t60 | |