10A 600 VOLT DIODE Search Results

CSD10060A

Abstract: CSD10060G CSD10060
Contextual Info: CSD10060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=10A Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

Contextual Info: CSD10060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 10A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

MYXDS0600-10DA0

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 600 Volt 10 Amp Hermetic SMD MYXDS0600-10DA0 y r a in Product Overview Features Benefits • High voltage 600V isolation in a small package outline • Essentially no switching losses • Higher efficiency • High current 10A

MYXDB0600-10CEN

Abstract: silicon carbide
Contextual Info: SiC Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • Higher efficiency • High current 10A • High temperature 210°C

MYXDS0600-10AAS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 600 Volt 10 Amp Hermetic MYXDS0600-10AAS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation in a small package outline • Higher efficiency • High current 10A • High temperature 210°C

MYXD30600-10CEN

Abstract: silicon carbide
Contextual Info: SiC Schottky 3 Phase Diode Bridge 600 Volt 10 Amp Hermetic MYXD30600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • 6 off high current 10A diodes • High temperature 210°C • HMP solder tinned leads available

Contextual Info: 1N3305B THRU 1N3350B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODES 6.8 VOLT THRU 200 VOLT 50W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3305B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high

Contextual Info: 1N3305B THRU 1N3350B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODE 6.8 VOLT THRU 200 VOLT 50W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3305B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high

PCIH47M400A1

Abstract: 200W AMPLIFIER 47-pin TPDC200P-48B TPDC200P-48B-490 12V 50A 10A 600 VOLT DIODE 12V 30A diode
Contextual Info: TOTAL POWER INT'L 36-72VDC INPUT RANGE DC-DC CONVERTER HOT-SWAP CompactPCI QUAD OUTPUT 200 WATTS CURRENT SHARING SWITCHING POWER SUPPLIES TPDC200P-48B SERIES FEATURES: 200W IN 3U X 8HP EUROCARD PACKAGE CompactPCI DC-DC CONVERTER INTERNAL OR-ING DIODES FOR

lx2400

Abstract: LX2400ILG IEC61215 ul 1741 photovoltaic module 5w LX2400 Microsemi photovoltaic module ul 1741 download pv dc/ac solar pv inverter
Contextual Info: PRODUCT BRIEF LX2400 IDEALSolar Bypass Diode DESCRIPTION Solar Bypass Diode for Photovoltaic PV Modules with Industry’s Lowest Forward Voltage Drop and Lowest Operating Temperature The LX2400 IDEALSolarTM Bypass Diode with Microsemi’s patented CoolRUNTM technology provides a bypass path in PV

260-8P

Abstract: neda 13f BUSSMAN Fuse 250V 2A decibel meter Bussman 260-8RT 2A600V
Contextual Info: ® 260-8 & 260-8P Analog VOM When a Digital Multimeter won’t do the Job Professionals have long recognized that a Simpson 260 analog meter is superior to the best DMM when monitoring fluctuating trends and rates. The 260-8 features more attributes than its predecessors. Standard and highenergy fusing in conjunction with diode network meter movement protection makes

Contextual Info: CSD20060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 20A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

D 16027 G

Contextual Info: CSD20060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=20A Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

Contextual Info: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •

SML10EUZ12K

Abstract: 50V 10A ultra fast diode
Contextual Info: SML10EUZ12K Enhanced Ultrafast Recovery Diode 1200 Volt, 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12K 1 2 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with

Contextual Info: SML10SIC03YC 4.83 0.190 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) Silicon Carbide Schottky Diode 300 Volt, 2X10 Amp TECHNOLOGY 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420)

Contextual Info: CSD10030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=10A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

Contextual Info: CSD10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

50V 10A ultra fast diode

Abstract: SML10EUZ12D
Contextual Info: SML10EUZ12D Enhanced Ultrafast Recovery Diode 1200 Volt, 10 Amp TECHNOLOGY Back of case live Cathode SML 10EUZ12D The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with

10a 1200v diode

Abstract: 12 VOLT 10 AMP smps
Contextual Info: SML10EUZ12K Ultrafast Recovery Diode 1200 Volt, 10 Amp MECHANICAL DATA Dimensions in mm inches Back of Case Cathode TECHNOLOGY SML 10EUZ12K 1 2 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising

10A 600 VOLT DIODE

Abstract: SML10EUZ12SC
Contextual Info: SML10EUZ12SC Ehanced Ultrafast Recovery Diode 1200 Volt, 2 x 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12SC The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with

TO247 package

Abstract: SML10EUZ12BC
Contextual Info: SML10EUZ12BC Ehanced Ultrafast Recovery Diode 1200 Volt, 2 x 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12BC 1 - Anode 1 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with

D 16027 G

Contextual Info: CSD20030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=20A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

10N40E

Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
Contextual Info: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features