10N06 Search Results

J237

Abstract: VNK10N06 AUTOPROTECTED POWER MOSFET 3.2 zener diode OF SGS-THOMSON
Contextual Info: £ÿj SCS-THOMSON lœ iILIC TK O K liei V N K 10N06 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET ADVANCE DATA TYPE VN K 10N 06 . . . . . . . . . Vclamp RDS on llim 60 V 0 .15 £2 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

Contextual Info: Green Product SDP F 10N06 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 10A 0.68 @ VGS=10V Rugged and reliable.

10N06

Abstract: D10N06 diode gc6
Contextual Info: S G S -T H O M Î 7 S O N V N D 1 0 N 0 6 /V N D 1 0 N 0 6 -1 ilL Ifê T O O T O iS S V N P 1 0 N 0 6 F I / K 1 0 N 0 6 F M ’’OMNIFET’: FULLY AUTOPROTECTED POWER MOSFET TY P E VN D 10N06 10N06-1 VN P 10N 06FI VNK 10N06FM . . . • . . . . . Vclamp

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

EBMS321611B190

Abstract: EBMS321611B190-1206 SW PUSHBUTTON-SPST-2 flashpro3 schematic EBMS3216 PUSHBUTTON-SPST-2 CP2102-GM-MLP28 DIP-SW6 FlashPro3 LIR2450
Contextual Info: IGLOO nano Starter Kit User’s Guide Actel Corporation, Mountain View, CA 94043 2010 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200146-2 Release: September 2010 No part of this document may be copied or reproduced in any form or by any means without prior written consent of

MTP10N05

Abstract: 10N06 10N05 mtp13n
Contextual Info: M O TO ROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is to r IM-Channel Enhancem ent-M ode Silicon G ate TM O S TM O S POWER FETs 10 AMPERES r DS on = 0.28 OHM 50 and 60 VOLTS These TM O S Power FETs are designed fo r lo w voltag e , high

capacitor 47 nano

Abstract: EBMS321611B190 rpack 10k EBMS3216 USBLC6-2SC6-SOT23-6L FlashPro3 EBMS321611B190-1206 EBMS LIR2450 flashpro3 schematic
Contextual Info: IGLOO nano Starter Kit User’s Guide Actel Corporation, Mountain View, CA 94043 2009 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200146-0 Release: February 2009 No part of this document may be copied or reproduced in any form or by any means without prior written