109 DIODE Search Results
109 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
109 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
anchor flange
Abstract: 27E121 27E123 27E891 27E122 27E892 20C217 27E007 11 pin relay Socket 27E937
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27e12227e89111-pin27e123+7 | |
RIACON Type 169, RM 3.5mm
Abstract: TMCM-109-57 riacon RIACON Type 169 RM 3.5mm riacon typ 49 riacon* 6 pin male connector NEMA-23 TMC249 TMC428 how to interface microcontroller to optocoupler
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pd-109-57nema-23tmcm-109-57riacon type 169, rm 3.5mm+7 | |
SMD RESISTOR 100 OHMS
Abstract: 101K capacitor ceramic SMD 1206 RESISTOR 0 OHMS smd schottky diode marking U2 2200 MF CAPACITOR 25v capacitor 2200 uf 25v GRM42-6X7R103M SMD 1206 RESISTOR 100 OHMS resistor smd capacitor 10 uF x 25v
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tl5001evm-108/109/110smd resistor 100 ohms101k capacitor ceramicsmd 1206 resistor 0 ohms+7 | |
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Contextual Info: Fast Recovery Epitaxial Diode FRED DSE1120 lFAVM = 109 A VRRM = 1200 V trr = 40 ns TO-247 A = Anode, C = Cathode Symbol Tc = 60°C; rectangular, d = 0.5 Tc = 95°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM 109 75 tbd A A |
OCR Scan |
dse1120o-247 | |
MTZJ SERIES ZENER DIODES
Abstract: Schottky Barrier Diodes
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OCR Scan |
tions---------------------------------1225200bmtzj series zener diodesschottky barrier diodes | |
RIACON Type 169 RM 3.5mm
Abstract: TMCM-109-57 riacon typ 49 optocoupler 357 riacon 49 NEMA-23 TMC249 TMC428 RIACON Type 169, RM 3.5mm step motor driver 10A
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pd-109-57nema-23tmcm-109-5729-jun-2005+12 | |
RIACON Type 169, RM 3.5mm
Abstract: TMCM-109-57 Trinamic PD1-109-57-RS PANdrive riacon typ 49 QSH5718 TMC249 TMC428 PD3-109-57-RS PDx-109-57 PD4-109-57-RS
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pdx-109-572010-jan-15riacon type 169, rm 3.5mmtmcm-109-57+7 | |
FDN8601Contextual Info: FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m: Features General Description Max rDS on = 109 m: at VGS = 10 V, ID = 1.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
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fdn8601 | |
TMCM-109-57
Abstract: riacon typ 49 QSH5718 TMC249 TMC428 RIACON Type 169, RM 3.5mm how to interface microcontroller with optocoupler
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Original |
pdx-109-572010-sep-25pdx-109qsh5718+6 | |
FDC8601Contextual Info: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description ̈ Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
Original |
fdc8601 | |
linear optocoupler
Abstract: CP CLARE LOC110 AN-109 Isolation amplifier
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an-109loc110an-109-r1linear optocoupler+2 | |
LOC110
Abstract: AN-109 phototransistor with amplifier "Isolation Amplifier"
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an-109loc110an-109-r1phototransistor with amplifier+1 | |
FDC8601Contextual Info: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
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fdc8601 | |
EIA/JESD22-A114-A
Abstract: EIA-625 all ic datasheet in one pdf file electro discharge machining JESD22-A114-A A112 A115-A WAN-109
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wan-109wan-107eia-625eia/jesd22-a114-a+6 | |
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M109Contextual Info: ¡gHg illlil • I M-109 & M-122 t t e lM M H z i +7 dBm/Higit P M fsnlftion/OPL Vmhm/TS-5 PRINCIPAL SPECIFICATIONS RF/LO Frequency, MHz IF Frequency, MHz M-109 1 -500 DC - 500 7.0 8.5 5 -2 0 0 1 -500 40 25 1 -50 50 - 500 30 18 1 -50 50 - 500 M-122 5 -1 00 0 |
OCR Scan |
m-109m-122mil-m-2883723feb96+1 | |
M74HC109Contextual Info: ! r = 7 S G S -T H O M S O N A 7 # M 5 4 H C 109 M 7 4 H C 109 DUAL J-K FLIP FLOP WITH PRESET AND CLEAR • HIGH SPEED fMAX = 60 MHz TYP. at VCc = 5V ■ LOW POWER DISSIPATION Ice = 2 /¿A (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V N |H = V n il = 28% VCc (MIN.) |
OCR Scan |
54/74ls109m54hc109m74hc100m54/74hc109+1 | |
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Contextual Info: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSA56-109 BLUE Description 0.56INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode. |
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kpsa56-10956inch800pcs/other05+2 | |
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Contextual Info: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSC02-109 BLUE Description 0.2INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode. |
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kpsc02-1091300pcsother05dsaa9976+1 | |
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Contextual Info: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSA04-109 BLUE Description 0.4INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode. |
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kpsa04-109800pcs/dsaa9094mar/25/2005 | |
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Contextual Info: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPDC56-109 BLUE Description 0.56INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode. |
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kpdc56-10956inch400pcs/other05+2 | |
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Contextual Info: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES KPSA02-109 BLUE Description Features 0.2INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode. |
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kpsa02-1091300pcsother05dsaa9966+1 | |
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Contextual Info: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSC56-109 BLUE Description 0.56INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode. |
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kpsc56-10956inch800pcs/other05+2 | |
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Contextual Info: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSC04-109 BLUE Description 0.4INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode. |
Original |
kpsc04-109800pcs/reeldsaa9098mar/25/2005 | |
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Contextual Info: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPDA56-109 BLUE Description 0.56INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode. |
Original |
kpda56-10956inch400pcs/other05+2 | |