108E Search Results

HRW0502A

Abstract: SC-59A DSA003637
Contextual Info: HRW0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-108E Z Rev. 5 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Eaton C25

Contextual Info: SECTION C Rocker Switches Index Index C-1 Illuminated Rocker Switches • Watertight seal per MIL-STD-108E • One and two pole arrangements • Standard rocker and locking style actuation • Switch is front panel mounted • Lamps can be wired with circuit or independently

Contextual Info: "ILLUMINATER " SERIES SEALED ROCKER SWITCHES DESCRIPTION The new Illuminater series of front panel mounted rocker switches are sealed to meet the watertight requirements of MIL-STD-108E. Product variations are with standard or locking rocker Actuator, and single or double pole switching with multi-circuits. A variety of accessory items are also available. This

Contextual Info: 2-108E11A Unii:¡ nn 3K cu o * in CU vj 5 r- 00 CTs \D vj5 I- vj 5 1 CO 6 , 8±0 , 5 02, 1±0, 5 i œ ö +i in * i i * 20, 955* i r co ö +i cu co ¥ v Y II 05, 5±0, 5 T in ö +i ; _l_ Î in ö +i cu I lg m 3 4 5 6 II I 17 T JAPAN 8 910 1112 . rm rm rm fm rt j \ rtd

Contextual Info: 2-108E12A Unit: m 6, 8+0, “Í T in o +i OJ o +1 o L5. 5+0, 5 1, 15±0. 1 ik A J —L A A A A J—L A A U - i- A A J _ L A J—L 1-C’O in in _o o +i +i +1 m r-C\J *—i « —i 105±0. 5 I ft J E D E C H- K JE I TA□ - K * 2 = I - K « J ¥ i í * 2-108E12A

KX14

Abstract: KX15
Contextual Info: 'ON 2 ONIMVya #^M|S mm AR f t REV. _|UU 1 5 108E0PS 8. De o . 2 003 DON S 1 P3 S DESCRIPTION NO. 053945 REVISED TABLE a i C HK . DR. 2 E.MURANO H.TAKAHASHI * . afe H APPD. y & APPD. .y a h i r o ±0.15 A TABLE ? CONTACT FINISH I B * CONTACT FINISH N l± AuO .

Contextual Info: 2-108E12A Uniti nn May,2001

Contextual Info: HRW0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0157-0600Z Previous: ADE-208-108E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: ECONOSWITCH—ENVIRONMENTALLY SEALED SWITCHES Series—8536, 8537, 8538 Econoswitch Sealed Leverlock Toggle Switches FEATURES SPECIFICATIONS • Environmentally sealed • Watertight seal per MIL-STD-108E • 1, 2, and 4 pole circuitry exceeds IP66/67 • Locking actuator for safety

Contextual Info: I2P AK PSMN8R5-108ES N-channel 108 V 8.5 mΩ standard level MOSFET in I2PAK 13 January 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

MIL-S-8834

Abstract: MV 3581 ms24524-21 8531K1 MS24523-21 7802K11 MS24523-22 7805K33 8532K39 MS24524-23
Contextual Info: Environmentally Sealed, Mil-Spec. and Toggle Switches, and Switchguards Econo Switch Ñ Environmentally Sealed Toggle Switches MIL-S-3950 Environmentally Sealed Toggle Switches UL recognized/CSA certified. Designed for demanding industrial applications, switches are environmentally sealed to ÒspraytightÓ requirements for the MILSTD-108E. Meets or exceeds commercial hose-down tests. Nickel plated brass

Contextual Info: Hammond Mfg. Co. Ltd., Electronics Division www.hammondmfg.com 108E MINIATURE EPOXY POTTED AUDIO TRANSFORMER 6 Audio input, line matching and output transformers Epoxy potted in an attractive molded case, Pin type, P.C. board mount, min. 0.187” length

Hitachi DSA002789

Abstract: S10 package
Contextual Info: HRW0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-108E Z Rev 5 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information

HRW0502A

Abstract: SC-59A Hitachi DSA0045
Contextual Info: HRW0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-108E Z Rev 5 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HRW0502A

Contextual Info: HRW0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0157-0600Z Previous: ADE-208-108E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

k915

Abstract: 8531K5 8530K95 K918
Contextual Info: ECONOSWITCH—ENVIRONMENTALLY SEALED SWITCHES Series—8530, 8531, 8532 Econoswitch Sealed Toggle Switches FEATURES SPECIFICATIONS • Environmentally sealed • Watertight seal per MIL-STD-108E • 1, 2 and 4 pole Circuitry exceeds IP 66/67 • One hole mounting for easy installation • UL recognized and CSA certified

D005

Contextual Info: Extract from the online catalog HC-DD 108-ESTC Order No.: 1674723 HEAVYCON male insert, DD108 series, 108-pos., crimp connection Product notes WEEE/RoHS-compliant since: 01/31/2006

talking energy KWH meter introduction

Abstract: 9323h microcontroller based energy meters 8051 9515h 9330h 9338h AS8228 OS 470 88, VARISTOR Prepayment Electricity Meter BUT16
Contextual Info: AS8218 / AS8228 Highly Integrated Single Phase 2-Current Energy Metering Integrated Circuits with Microcontroller, RTC, Programmable Multi-Purpose I/Os and LCD Driver 1. Key Features - Precision single-phase, one or two current input energy measurement front-end including SigmaDelta modulators for A/D-conversion and digital

ALLEN-BRADLEY RESISTOR network

Abstract: ALLEN-BRADLEY RESISTOR ALLEN-BRADLEY RESISTOR NETWORKS Allen-Bradley resistors ALLEN-BRADLEY RESISTOR array ALLEN-BRADLEY RESISTOR temperature 270 ALLEN-BRADLEY RESISTOR temperature marking 206a 408A103 EC5410-4
Contextual Info: TCKÌiir I N T L / E L E K ' V, u o d CNPNT »I V KKWL I N T L / fl?I> D | 7A1D7S3 OODDflll 2 | ELÉK CMPNT DI V 87D 0 0 8 1 1 • ic S 'O S D % Series 100, 1 , 200 400 Cermet Resistor Networks I-SIP Single In-Line Package FEATURES _ Solid Ceramic Body, with V-Groove

HD6309

Abstract: hitachi HD6309 HD63B09P HD6309e HD63C09P HD6809E HD6809 HMCS6800 HD63B09 HD63C09
Contextual Info: #U180 HD63B09, HD63C09 CMOS Microprocessing Unit MPU JANUARY, 1988 H IT A C H I Pin A rra n g e m e n t D escrip tion The H D 6309 is th e h ig h est 8 -b it m icro­ p rocessor of H M C S6800 family, w h ich is co m p atib le w ith th e co n v en tion al H D 6809.

FD3055

Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

FD3055

Abstract: fp3055 TA49082 IS433 RFD3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

FD3055

Abstract: Fp3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

298G8

Abstract: 117E16 240/TDA 2606
Contextual Info: 11-13 Port Road Queenstown, SA 5014 ABN 53 008 189 535 Tel: 8 8240 2244 Fax: 8 8240 2255 Web: www.hammondmfg.com E-mail: australia@hammfg.com 2012 Australian Trade Price List Transformers visit us at www.hammondmfg.com Effective date: September 1, 2012 Replaces all other Price Lists