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    1084 FET Search Results

    1084 FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPA2137EA/250G4
    Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/250
    Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/2K5
    Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA131UJ
    Texas Instruments General Purpose FET-Input Operational Amplifiers 8-SOIC -55 to 125 Visit Texas Instruments Buy
    OPA137UA
    Texas Instruments Low Cost FET-Input Operational Amplifiers 8-SOIC -40 to 85 Visit Texas Instruments Buy

    1084 FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EE - CH4

    Abstract: EE CH4
    Contextual Info: Panasonic Operational Amplifiers AN 1084, AN1084S Quadruple J-FET Input Operational Amplifiers • Overview A N 1084 The AN 1084 and the AN1084S are quadruple opera­ tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high


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    AN1084S AN1084S 1012fJ b132fl52 001237b EE - CH4 EE CH4 PDF

    Contextual Info: AN 1084, AN1084S OPERATIONAL AMPLIFIERS A N I0 8 4 , AN1084S Quadruple J-FET Input Operational Amplifiers • Outline AN 1084 T h e A N 1084 and the AN1084S a re q uadruple o p eratio n al 1 <E am plifiers w ith input sta g e s consisting of P ch J-F E T adopting


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    AN1084S AN1084S AN1084, PDF

    AN-1084

    Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
    Contextual Info: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5


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    AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841 PDF

    ld 1086 18

    Contextual Info: 2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features Low on-resistarice R DS nn 20 mil: typ. (VGS = 10V, Iu = 15 A) • 4V gate drive devices. • High speed switching Outline TQ -220C FM 1. Gate 2. Drain 3. Source 1084 ADE-208-544


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    2SK2736 ADE-208-544 -220C 2SK2684 ld 1086 18 PDF

    2SK1084

    Abstract: Z5C10
    Contextual Info: 2S K 1084 S IP M 0 S r' Ä ± / * r7—MOS-FET M OS-FET F-III N C H AN N EL SILICON PO W ER MOS-FET SERIES M ftlk • Features • H ig h c u rre n t • L o w o n re sista n ce • 23CP*t*<rf £ i . % N o s e c o n d a ry b re a k d o w n • • Low driving power


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    2SK1084 SC-47 A2-157 2SK1084 Z5C10 PDF

    AN1084

    Abstract: 25A 1084 AN1084S
    Contextual Info: Panasonic Operational Amplifiers AN 1 0 8 4 , A N 1084S Quadruple J-FET Input Operational Amplifiers • Overview The AN1084 and the AN1084S are quadruple opera­ tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high


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    AN1084S AN1084S 1012fJ 106dB Q012375 32flSE DD1237b AN1084 25A 1084 PDF

    ac 1084

    Abstract: sunplus 1002 sound generator using IC 555
    Contextual Info: SPL02D 19.5KB LCD CONTROLLER/DRIVER GENERAL DESCRIPTION The SPL02D is a CMOS 8-bit single chip microprocessor. By using advanced technology and mechanism, it contains RAM, ROM, I/Os, one interrupt controller, two tone generators, one noise generator, and one automatic


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    SPL02D SPL02D SPL02D, 192-byte ac 1084 sunplus 1002 sound generator using IC 555 PDF

    sunplus 1002

    Abstract: ac 1084 sound generator using IC 555 sunplus 1500 00FF SEG22 SEG40 SPL02D IC 555 as temperature controller 195KB
    Contextual Info: SPL02D 1 9.5KB LCD Controller/Driver 19 AUG. 09, 2001 Version 1.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.


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    SPL02D sunplus 1002 ac 1084 sound generator using IC 555 sunplus 1500 00FF SEG22 SEG40 SPL02D IC 555 as temperature controller 195KB PDF

    2SK766

    Contextual Info: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET • Package Dimensions ■Features • Low ON resistan ce R ds on : R Ds (on) = 2 .4 f l (ty p .) Unit: mm • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage


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    2SK766 0170fll 99Z5ISZ 2SK766 PDF

    TL 1084

    Abstract: 2SK766 1084 fet
    Contextual Info: P o w er F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R ds (on) = 2 .4 fl (typ.) • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage


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    2SK766 O-220 TL 1084 2SK766 1084 fet PDF

    ld 1086 18

    Contextual Info: 3SK194 Silicon N-Channel Dual Gate MOS FET HITACHI Application VHF/UHF TV tuner RF amplifier Outline M PA K -4 1. Source 2. G a te l 3. G ate2 4. Drain 1080 3SK194 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage Vos 15


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    3SK194 ld 1086 18 PDF

    IT500-IT505

    Abstract: IT500 IT501 IT502 IT503 IT504 IT505 SDI-MU 25h8
    Contextual Info: IT 5 0 0 - IT 5 0 5 G E SOLID STATE 01 D E | 3 f i ? S D Ö l GDllD3fc. b | IT 5 0 0 - IT 5 0 5 Monolithic Dual Cascoded N-Channel JFE T General Purpose Amplifier GENERAL DESCRIPTION FEATURES A low noise, low leakage FET that employs a cascode structure to accomplish very low Iq at high voltage levels,


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    0011D3L, IT500-IT505 120dB 50Vdg Vos--14V VOS-20V IT500-IT505 IT500 IT501 IT502 IT503 IT504 IT505 SDI-MU 25h8 PDF

    A008 amplifier TRANSISTOR

    Abstract: FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters
    Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


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    5091-8350E 5966-0935E AT-41511 5964-3853E AT-32063 5966-0781E A008 amplifier TRANSISTOR FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters PDF

    high power FET transistor s-parameters

    Abstract: transistor 9455 PRIMER transistor A006
    Contextual Info: | 2 3 | HEW LETT 1"HA P A C K A R D Applications The applicatim i notes represented by these abstracts are available fro m y o u r local Hewlett-Packard sales office or nearest Hewlett-Packard authorized d istrib u to r or representative. Techn ical inform ation is aiso available on the WWW at:


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    A004E 5964-3431E AT-32063 5091-8824E 5966-0781E 5091-8819E high power FET transistor s-parameters transistor 9455 PRIMER transistor A006 PDF

    Contextual Info: Revised Mar. 1998 JS9P09-AS 1. R F PERFO R M A N CE SP E C IF IC A T IO N S CHARACTERISTICS SYM BOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm 7.0 9.5 — dB IDS1 - 0.18 0.3 A T|add - 28 — % Output Power at ld B Compression Point PldB Power Gain at ld B


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    JS9P09-AS At203 254mm PDF

    ua776

    Abstract: UA776CH
    Contextual Info: • r z T Ä 7=15=1237 0023^=1 S ■ " P ^ - O 0 !_ S G S -T H O M S O N 7 # M ^ o m i(O T (ô M S U A 7 7 6 S G S-THOMSON 3GE D PROGRAMMABLE SINGLE OP-AMPs ■ M ICRO PO W ER OPERATION ■ NO FREQ UENC Y COM PENSATION REQUIRED ■ W IDE PROGRAMMING RANGE


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    UA776 QD23bMD GQ23b41 UA776 UA776CH PDF

    abb r1561

    Abstract: ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002
    Contextual Info: Technical Catalogue Solid State Relays Interface Relays Solid-state relays Terminal modules Contents ABB STOTZ-KONTAKT GmbH Solid-state relays SIGMASWITCH .


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    D0201 D-69006 abb r1561 ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002 PDF

    MC-424000A8FA-60

    Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000A8 SERIES 4M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w ords by 8 bits dynamic RAM m odule on which 8 pieces o f 4M DRAM </iPD424100 are assembled. This m odule provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the


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    MC-424000A8 uPD424100 MC-424QQQA8-60 MC-424000A8-70 MC-424000A8-80 MC-424000A8-10 MC-424000A8BA, 424000A8FA MC-424000A8FA-60 PDF

    Contextual Info: S G S -T H O M S O N M Q M i H H O T * S U A 7 7 6 PROGRAMMABLE SINGLE OP-AMPs • MICROPOW ER OPERATION ■ NO FREQUENCY COMPENSATION REQUIRED ■ W IDE PROGRAMMING RANGE ■ HIGH SLEW RATE . SHORT-CIRCUIT PROTECTION ■ PROGRAMMABLE SINGLE OP-AMPs D E S C R IP T IO N


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    UA776 UA776 PDF

    UA776CDP

    Abstract: A776C A776 A776M
    Contextual Info: SGS-THOMSON [» œ tJO T « ! UA776 PROGRAMMABLE SINGLE OP-AMPs • M IC R O P O W E R O P E R A T IO N ■ N O F R E Q U E N C Y C O M P E N S A T IO N R E Q U IR E D ■ W ID E P R O G R A M M IN G R A N G E ■ H IG H S L E W RATE ■ S H O R T -C IR C U IT P R O T E C T IO N


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    UA776 UA776CDP A776C A776 A776M PDF

    IBJT

    Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
    Contextual Info: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but


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    AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5 PDF

    dsp based echo cancellation

    Abstract: leaky lms C6201 digital echo cpu 5512 Report echo echo cancellation TMS320 TMS320C6201
    Contextual Info: Performance Analysis of Line Echo Cancellation Implementation Using TMS320C6201 Application Report: SPRA421 Zhaohong Zhang and Gunter Schmer Digital Signal Processing Solutions March 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any


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    TMS320C6201 SPRA421 TMS320C6201 G165/DECT TMS320C62xx dsp based echo cancellation leaky lms C6201 digital echo cpu 5512 Report echo echo cancellation TMS320 PDF

    Contextual Info: HARRIS ^ e °° HI20206 ,\G ^ S S E M I C O N D U C T O0 RR Triple 8-Bit, 35 MSPS, RGB, 3-Channel D/A Converter se . August 1997 Description Features R esolu tion . .Triple 8-Bit Maximum Conversion S p e e d .


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    HI20206 35MHz 360mW HI20206 1-800-4-HARRIS PDF

    Contextual Info: HI20206 S IGN ES WD S E M I C O N D U C T O R NE August 1997 NOT R D FO 8 E D EN I117 OMM See H C E R Triple 8-Bit, 35 MSPS, RGB, 3-Channel D/A Converter Features Description • Resolution . . . . . . . . . . . . . . . . . . . . . . . . . . . Triple 8-Bit


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    HI20206 35MHz 360mW CX20206 HI20206 1-800-4-HARRIS PDF