1050 NM Search Results

Emitter

Abstract: APG2C1-1050 tip 1050
Contextual Info: APG2C1-1050 IR High Power single chip LED APG2C1-1050 is a GaAlAs based, high power 1050 nm single chip LED in standard emitter package for general application. Specifications • • • • • Structure: GaAlAs Peak Wavelength: 1050 nm Optical Output Power: typ. 50 mW

Contextual Info: TXPI 1207 1050 nm Light Emitting Diode Surface Mount 1206 Style DESCRIPTION FEATURES This is a 1050 nm Infrared 1206 package surface mount LED optimized for applications requiring a small, Infrared LED. ” ” ” ” 1050 nm Infrared emission 0.3 mw typical Output Power

Contextual Info: SMB1N-1050 v 1.0 03.10.2014 Description SMB1N-1050 is a surface mount AlGaAsP High Power LED with a typical peak wavelength of 1050 nm and radiation of 45 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.

Contextual Info: epitex Φ5 STEM TYPE LED L850/940/1050-40C00 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1050-40C00 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1050-40C consists of an AlGaAs (850, 940nm) and InGaAsP(1050nm) LED

Contextual Info: epitex Φ5 STEM TYPE LED L850/940/1050-40C00 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1050-40C00 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1050-40C consists of an AlGaAs (850, 940nm) and InGaAsP(1050nm) LED

Contextual Info: TXPI 1027 Indium Gallium Arsenide Phosphide 1050 nm Light Emitting Diode DESCRIPTION This is a high radiance InGaAs IR LED for applications requiring 1050 nm emission and a fast response time. FEATURES ” ” ” ” 12 Degree Half Angle of light emission High Electrical Bandwidth/Fast response time

BRM-1050

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BRM-1050 INFRARED RECEIVER MODULE ● Description 1. The BRM-1050 is miniaturized infrared receivers for remote control and other applications requiring ●Package Dimensions: improved ambient light rejection. 2. The separate PIN diode and preamplifier IC are

Contextual Info: Outdoor-XUPs ~ 1050 watts, 230 vac, UPS with voltage regulation, 1500AHV/1500BHV Outdoor XUPs Series 230 vac outdoor uninterruptible power system Outdoor XUPs Outdoor XUPs model 1500AHV 1500 VA 1050 watts 230 vac 45 min @1050W 1.7 hrs @525W -20° to +60°C;

TLGH1050

Abstract: TLYH1050 750H ST-100S TLFGH1050
Contextual Info: TL RMH,SH,OH,YH,GH,FGH 1050(T20) TOSHIBA LED Lamp TL(RMH,SH,OH,YH,GH,FGH)1050(T20) ○Panel Circuit Indicator • 5.2 (L) x 5.2 (W) × 4.0 (H) mm size • TL□H1050 (T20) Series • InGaAℓP LEDs • High Luminous consumption • Colors :Red, Orange, Yellow, Green

Contextual Info: ;POUEREX INC 74 D e | VET Mb SI DDOlll? 3 5 .2 Condensed Electrical And Thermal Characteristics And Ratings j GETYPE C440 C702 C703* — C390 x 500 — 100-600 500-1300 2000-3200 2000-2800 — 1300 800 @ 70°C 1400 850 @ 75°C 1570 1050 @ 70°C 1570 1050 @ 70°C

DT63-400

Abstract: DT74-250 DT34-500 DT48-950 DT600-500 DT63-500 DT74-350 u800 diode DT600-450 tc40u
Contextual Info: PUW ERLIIME IMPIM C ase O utline Device Type TCD30/U-800 TCD30/U-1000 •TC1-800 TC15/U-800 TC15/U-1000 •TC35/40U-250 •TC35/40U-300 •TC35/40U-400 TS/DT36-300 TS/DT34-500 TS/DT32-1050 DT46-1100 DT46-1200 DT47-1000 DT47-1050 DT48-850 DT48-950 DT51-700

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values

A2100-A

Abstract: IC-105
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 M8 18 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values

Crystal Oscillators 3.57MHz

Abstract: Quartz Crystal Oscillators 3.57MHz crystal oscillator 3.57MHz Quartz Crystals 12 Mhz Kyocera pbrc-b Piezo Electric Quartz Crystals Motorola 801 cordless phone KXO-01 Kyocera kxo-01 479M
Contextual Info: Table of Contents CERAMIC RESONATORS General Description . 2-7 KBR -Y Series - Surface Mountable — fo: 380 to 1050 kHz . 8-9

KBR-912F108

Abstract: KXO-01-1-40.0000MHZ uPC1403CA Quartz Crystal Oscillators 3.57MHz CI 4069 Kyocera kxo-01-1 M51785 BA7004 HA13468 HC1-CSE 50 MHZ
Contextual Info: KYOCERA Timing Devices Resonators Crystals Oscillators Table of Contents CERAMIC RESONATORS General Description . 2-7 KBR -Y Series - Surface Mountable — fo: 380 to 1050 kHz . 8-9

avalanche photodiode bias

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

SAE500NX

Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

SAE500

Abstract: SAE230NS SAE230NX SAE500NX rangefinding SAE230 SAE500NS
Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

Contextual Info: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.

RLT1050M-500G

Contextual Info: RLT1050M-500G TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 1050 nm Optical Ouput Power: 500 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN