103A DIODE Search Results

module siemens EM 235

Abstract: siemens EM 235 siemens igbt BSM 100 siemens igbt BSM 100 gd siemens igbt
Contextual Info: SIEMENS BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate BSM 75 GD 120 DN2 LU Type h 1200V 103A Package Ordering Code ECONOPACK 3

DO-213AA

Abstract: 103A
Contextual Info: LL 103A . LL 103C Silizium-Schottky-Dioden für die Oberflächenmontage Surface Mount Si-Schottky Barrier Diodes Nominal current Nennstrom ±0.1 0.3 Type 3.5 ±0.1 0.3 ±0.1 1.45 Dimensions / Maße in mm 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung

C67070-A2516-A67

Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

bsm 75 gd 120 dn2

Abstract: bsm 75 gd 120 dn2 diagram
Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

bsm 75 gd 120 dn2

Abstract: GD 150 R 1200
Contextual Info: euoec F BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67

C67070-A2516-A67

Abstract: 260-D
Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

bsm 75 gd 120 dn2

Abstract: C67070-A2516-A67
Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC BSM 75 GD 120 DN2 1200V 103A Package Ordering Code ECONOPACK 3

Eupec BSM

Abstract: C67070-A2516-A67 bsm 75 gd 120 dn2 bsm 75 gd 120 dn2 diagram
Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

Contextual Info: APT100F50J 500V, 103A, 0.036Ω Max, trr ≤390ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

isotop mosfet 100V

Abstract: APT100M50J MIC4452 A1490
Contextual Info: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

MIC4452

Abstract: APT100F50J
Contextual Info: APT100F50J 500V, 103A, 0.036Ω Max, trr ≤390ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

103b

Abstract: 30V 200mA schottky barrier diode 103A DIODE LS103A 103A
Contextual Info: LS103A / 103B / 103C Small Signal Schottky Barrier Diodes Features Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications HF-Detector Protection circuit Small battery charger AC-DC / DC-DC converters

Schottky diodes

Contextual Info: SD103A thru SD103C Small-Signal Diode Schottky Diodes Features For general purpose applications The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal

103A

Abstract: APT0502 APT0601 APTM120UM95FAG
Contextual Info: APTM120UM95FAG Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance

irfp4568pbf

Contextual Info: PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

IRFP4568

Abstract: IRFP4568PBF DM 103A 103A irf 151 AN-994
Contextual Info: PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

103A

Abstract: c 103 mosfet
Contextual Info: APTM120UM95F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance

FUSE M8 250v G

Abstract: BA100 diode cr6l-50 CR6L-350 FUSE FUJI AHX2915 blown fuse indicator with alarm BLC075-1 CS10F-100 CR2L-300
Contextual Info: Low Voltage Fuses BLC, CR and CS types Super Rapid Fuses BLC, CR and CS types Super Rapid Fuses 150–1500 Volts AC 10–4700 Amps • Description The FUJI BLC, CR and CS types are extremely reliable fuses which have been specially developed to provide protection for silicon diodes and

30V 200mA schottky barrier diode

Abstract: 103B sd103 diodes
Contextual Info: SD103A thru SD103C Small-Signal Diode Schottky Diodes Features ‹ For general purpose applications ‹ The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ‹ The low forward voltage drop and fast switching make it ideal

Contextual Info: AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

S0103A

Abstract: SD103A SD103B SD103C
Contextual Info: SD103A “ SD103C SCHOTTKY BARRIER DIODE LITEMZI y POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance I Mechanical Data_ • •