1038 MOSFET Search Results

transformer winding formula step down

Abstract: EF25 transformer resistor 2m2 EF25 ferrite transformer ungapped IR2156 notes capacitor 220uF 50v IR2156 IR21592 dimmer circuit diagram for input 5v to 300v output EF25 bobbin
Contextual Info: Application Note AN-1038 Low Voltage DC Supply Dimmable Ballast for 1 x 36W T8 Lamp By Peter Green, Senior Lighting Systems Engineer Table of Contents Page Introduction .1

AP3039

Abstract: AP3608
Contextual Info: Application Note 1038 WLED Backlighting Solution for Medium LCD Panel Designed with AP3608E+AP3039 Prepared by Yuan Shan Shan, Han Lu System Engineering Dept. 1. Introduction solution for medium LCD panel under this condition. With the enhancement of environment-protecting

SS550

Abstract: 948S
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount 2.5 V/2.7 V* 1.8 V QT Typ nC @ VGS = 4.5 V (5.0 V)/10 V* 0.052 0.072 0.12 12 −3.7 0.96 0.085 0.12 0.21 7.5 −3.2 0.20 0.35 −1.3 −1.0 RDS(on) Max (W) @ VGS = VDSS (V)

marking code g1s

Contextual Info: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode ’ For low-rioise, gain-controlled input stages up to 1GHz •Operating voltage 12V 1Integrated bias network X Oroin 0 -J-G 2 AGC HF o Input G1 1 HF Output + DC > " J gñd" ESD : Electrostatic discharge sensitive device, observe handling precaution!

G2 marking

Abstract: G2 MARKING CODE
Contextual Info: SÌ1026X Vishay Siliconix New Product N-Channel 60 -V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY V(BR)OSS(min) (V) 60 rDS(on)(ö ) V GS(th) 1.40 @ VGs = 10 V (V) lD (m A ) 1 to 2.5 500 ESD Protected 2000 V FEATURES • • • • • • BENEFITS APPLICATIONS

1038 MOSFET

Contextual Info: SSF22N50A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 500V

soc 1041

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SM-3 HIGH-SPEED SWITCHING USE FS30SM-3 OUTLINE DRAWING Dimensions in mm 15.9MAX. . 4 .5 . 1.5 öT “Ü "T 0 3.2 1.0 , 5.45 5.45 0.6 2.8 • 10V DRIVE • V dss . 150 V

6P02

Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
Contextual Info: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

6P02

Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
Contextual Info: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

Mosfet

Abstract: SSPL2015
Contextual Info: SSPL2015 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 0.13ohm(typ.) ID 18A ① TO - 220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and

B 1038 superior

Abstract: irfp9240
Contextual Info: PD-9.481C International IrâRi Rectifier IRFP9240 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description

diode bs 9300

Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
Contextual Info: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)

2N2369 equivalent

Contextual Info: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)

dk 434

Contextual Info: APTM100UM45D-AlN Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Application D G DK DK S D SK G • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon

APT0502

Abstract: APT0601 APTM100UM45DAG max1814
Contextual Info: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D G DK Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance

APT0502

Abstract: APT0601 APTM100UM45DAG
Contextual Info: APTM100UM45DAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single switch with Series diode MOSFET Power Module SK S D G DK S DK Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: APTM100UM45FAG VDSS = 1000V RDSon = 45m typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK D S DK G S Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features

Contextual Info: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application S D G DK S Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

APT0502

Abstract: APT0601 APTM100UM45FAG dk qg
Contextual Info: APTM100UM45FAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode

NS6040

Abstract: apt 2100
Contextual Info: APTM100UM45F-AlN VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode

Contextual Info: APTM100UM45F-AlN VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode

133 Diode

Abstract: 66P02 ZXM66P02N8 ZXM66P02N8TA
Contextual Info: A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits V BR DSS RDS(on) ID -20V 0.025Ω -8.0A • High pulse current handling in linear mode

Contextual Info: A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) ID -20V 0.025Ω -8.0A • High pulse current handling in linear mode • Low on-resistance • Fast switching speed

20S60

Abstract: AOTF20S60L AOB20S60L
Contextual Info: AOT20S60/AOB20S60/AOTF20S60 600V 20A MOS Power Transistor General Description Product Summary The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC