102511 Search Results

MS2205

Contextual Info: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL M220 Epoxy Sealed DESCRIPTION:

1035 transistor

Abstract: M.P transistor
Contextual Info: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

55ay

Abstract: DME150
Contextual Info: DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven

AVF100

Abstract: ASI10569
Contextual Info: AVF100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVF100 is a high power Class-C transistor designed for IFF/DME/TACAN Applications in 1025-1150 MHz. A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • 50 V operation

Contextual Info: P S H GEC P L E S S E Y DS3353-1.3 DA1550-1 L BAND BALANCED MIXER The DA1550-1 is a general purpose L band balanced mixer of rugged construction and is especially suitable for use in airborne transponder applications. The I.F. output ports are internally connected to give a single output port. The

CB410

Abstract: stu 407 2804lSL CB-50 CB303 1090 TACAN CB-303 CB-408 SD1543-2
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications DME/IFF/TACAN puisées, classe C TYPE PAC K AG E CONFIG. Vcc V SD 1528 .280 4L STUD (A) SD 1528-1 .280 4LSL (A) SD 1528-8 .250 2LFL HERM SD 1530 .280 4L STUD (A) SD 1530-1 .280 4LSL (A)

MSC81035M

Abstract: TACAN TACAN 41
Contextual Info: MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG B A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES:

1075MP

Contextual Info: 1075MP 75 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for

1030-1090MHz

Contextual Info: M au m fi F Products M ic r o s e m m i Pft-KfSNMÎ!iy 140 C o m m e r c e D rive M o n tg o m e ry v iiie , P A 18936-1013 Tei: 215 631-9840 SD1 526-1 RF & MICROWAVE TRANSISTORS ÎFF/DME APPLICATIONS OESiGMED FOR HIGH POWER PULSE IFF, OME. TACAN 6,0W (typ) IFF 1030-1090MHz

Contextual Info: Order this data sheet MOTOROLA by M R F10350H /D SEMICONDUCTOR TECHNICAL DATA MRF10350H* Microwave Pulse Power Transistor 350 Watts Peak NPN 1025-1150 MHz C P T iO Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

Contextual Info: H J jgmRF P ro d u is _ » t wW ÊÊ U » C rO S G iT ii 140 c o m m e rc e D rive e, PA 1893 6-10 13 M o n{215 tg o m e Te|; 6 ry 3 1v 9ii ,I Î4 0 . SD1524-1 RF & MICROWAVE TRANSISTORS IFF/D ME APPLICATIONS • DESIGNED FOR HIGH POWER PULSE IFF,

Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTN120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: DME375A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 2L FLG The ASI DME375A is designed for pulsed systems in the 1025-1150 MHz frequency range. applications. FEATURES: • Internal Input/Output Matching Networks  PG = 6.5 dB at 375 W/1150 MHz

ASPC2

Abstract: SPC3 profibus ABB STOTZ-KONTAKT S 212 stotz s 212 cd 4093 equivalent CANopen RJ45 4009 file AbB ac servo motor SPC3C abb variable frequency drive wiring diagram
Contextual Info: System Description Advant Controller 31 Intelligent Decentralized Automation System Fieldbus Configurator 907 FB 1131 In order to easier find the different descriptions, they are separated by coloured paper sheets. Fieldbus Configurator Colour of paper sheet at the

100MHz VCO schematic

Contextual Info: HMC837LP6CE v00.1210 FRACTIONAL-N PLL WITH INTEGRATED VCO 1025 - 1150, 2050 - 2300, 4100 - 4600 MHz Features • RF Bandwidth: 1025-1150, 2050-2300, 4100-4600 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise -112 dBc/Hz in Band Typ.

ABB pressure transmitter etp80

Abstract: ETP08 ETP 04 ETP80 IEC770 HART 375 ABB pressure transmitter etp08 1034-01 PED-Basic RUNDMANTLAD
Contextual Info: Trycktransmitter ETP Tryck och nivåtransmitter för processindustrin Transmitter ETP Pressure and level transmitter for the process industry Bruksanvisning Operating Instructions ABB Instrumentation Innehåll Table of Contents Användning och kort beskrivning

Contextual Info: Preliminary Technical Information IXTN120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns G miniBLOC E153432 S S S G Symbol Test Conditions VDSS

D10N2

Abstract: marking dC
Contextual Info: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak

Z1-Z13

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1375 The RF Line M icrowave Pulse Power Transistor Motorola Preferred Device D e sig n e d fo r 1 0 2 5 -1 1 5 0 M H z p u lse c o m m o n b a se a m p lifie r a p p lic a tio n s su c h a s T A C A N a n d D M E. •

Contextual Info: Order this data sheet by MRF10500H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10500H’ Microwave Pulse Power Transistor 500 Watts Peak NPN 1025-1150 MHz C FTÌ0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

GROUND BASED RADAR

Abstract: AIRBORNE DME vimostm
Contextual Info: Thermal Characteristics & Considerations VIMOS Product Portfolio VIMOS THERMAL CHARACTERISTICS & CONSIDERATIONS Introduction: This document provide’s the RF amplifier design Engineer with a useful reference to aid in thermal considerations and calculations, applied to the VIMOSTM portfolio of RF power transistors. Rather

MS2205

Contextual Info: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • · · · · · 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL M220 Epoxy Sealed DESCRIPTION: