1024X8 RAM Search Results

M2130

Contextual Info: Am2130/Am2140 AdVM“ o 1024x8 Dual-Port Static Random-Access Memories Devices DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using

Contextual Info: A m 2130 1024x8 Dual-Port Static Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • • BUSY function to handle contention - Open drain for OR-tied operation Automatic power down CE Output Enable function (5E) Both ports operate independently

Am2140s

Abstract: VC1039
Contextual Info: Am2130/Am2140 1024x8 Dual-Port Static Random-Access Memories DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using one master (Am2130) and required number of slave

25C16V

Abstract: 25c08v CAT25160 cat25c08 25C16LI 25C16VI
Contextual Info: CAT25C16 is not recommended for new designs, replace with CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits.

CAT25c08 Catalyst

Abstract: 25C08 25C16 AEC-Q100 CAT25C08 CAT25C16
Contextual Info: Not Recommended for New Design, Replace with CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits.

25c08v

Contextual Info: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/

25C08

Abstract: 25c08v
Contextual Info: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/

25c08v

Abstract: 25C16VI
Contextual Info: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/

Contextual Info: HOLTEK r r HT24L C08/16 8K/16K 2-Wire CMOS Serial EEPROM Features • • • • • • • • • • • • • • O perating voltage: 2.4V~5.5V Low power consumption - O peration: 5mA m ax. - Standby: 5|iA m ax. In tern al organization - 8 K H T24LC08 : 1024x8

Contextual Info: A m 2 1 3 0 /A m 2 1 4 0 AdvS 1024x8 Dual-Port Static Random-Access Memories Devices DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using

Binary to hexadecimal

Abstract: Signetics 2608 rom 1024 1024x8 TEN 8 Series 2608 rom 1024x8 1024X8
Contextual Info: sjgnotics 1024X8 STATIC READ ONLY MEMORY 12608 2608 1 N CHANNEL SILICON GATE MOS 2600 SERIES PIN C O N F IG U R A T IO N D ESCRIPTIO N The 2608 is a fu lly decoded, static, mask programmable read-only memory. It has a capacity of 8192 bits organized 1024 X 8. The 2608 is fabricated with low threshold

Contextual Info: NJU3000 SERIES • GENERAL DESCRIPTION The NJU3000 series is a C-MOS 4-Bit Single Chip Tiny / Micro Controller consisted of Original CPU Core, Selectable lnput-0utput l/0 Ports, Program ROM, Data RAM, 8-Bit Serial lnterface(NJU3500 series), Timer(NJU3500 series), Interrupt Control Circuit(NJU3500 series) , 8-Bit A/D Converter(NJU3504) and

ram 8108

Abstract: 8108-5CD EMM 8108
Contextual Info: SEMI 8108 300NSEC, STATIC, T TL IN /O U T1024 X 8 N-MOS RAM SEMI 8108 500NSEC, STATIC, TTL IN /O U T 1024 X 8 N-MOS RAM FE A T U R E S G E N E R A L D E S C R IP TIO N • 1024 w o rd s X 8 bits EM M S E M I'S 8 1 0 8 is a 8 1 9 2 -b it sta tic R A M , ■

Contextual Info: The MSM62715 is a CMOS 8-bit single-chip microcomputer developed for IC cards. It incorporates 8K-bit EEPROM. 1. OVERVIEW 2. FEATURES ROM EEPROM RAM Clock frequency Instruction execution time Number of instructions Power supply voltage : : : : : : : 6144 bytes

Contextual Info: I I I H C F I T R L Y 5 T • ■ 1 1 / S E M I C O N D U C T O R Preliminary CAT24C08/CAT24C08I 8K-Bit SERIAL E2PROM FEATURES ■ l2C Bus C o m p atib le* 100,000 E rase/W rite Cycles ■ Low Pow er C M O S Tech no log y 100 Y ear Data Retention ■ O rganized as 1024 x 8 Bits

Contextual Info: KM68B4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)

HT66F004

Abstract: HT48R002 HT66F002 HT16K33 HT46R002 HT12F application circuit HT66F018 HT46R004 HT46R0042 HT46R066B
Contextual Info: Holtek Company Introduction Introduction Unrelenting growth and the release of a continuous stream of competitive and functionally rich new semiconductor devices onto the global market has been the hallmark of Holtek Semiconductor since the establishment of the company back in 1983 to the present

KM68BV4002

Abstract: KM68BV4002-15
Contextual Info: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) » Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12 :170 mA(Max.)

Contextual Info: F re liiv m -y KM684002B, KM684002BI CMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 10,12,15* Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) (CM O S): 10» »(Max.) Operating KM684002B -1 0 : 200««(Max.)

K6X8008T2B-TF55

Abstract: cmos static ram 1mx8 5v K6X8008T2B K6X8008T2B-F K6X8008T2B-Q
Contextual Info: K6X8008T2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002

KM68BV4002

Contextual Info: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)

K6X8008T2B-uf55

Abstract: K6X8008T2BUF55 K6X8008T2B-TF55 K6X8008T2B K6X8008T2B-F K6X8008T2B-Q K6X8008T2B-U
Contextual Info: K6X8008T2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002

KM68B4002J-12

Abstract: KM68B4002J-15
Contextual Info: KM68B4002 CMOS SRAM 512 K x 8Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max) (CMOS): 30 mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)

K6X8008T2B-TF55

Abstract: K6X8008T2B-TF70 K6X8008T2B K6X8008T2B-F K6X8008T2B-Q
Contextual Info: Preliminary CMOS SRAM K6X8008T2B Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial draft October 31, 2002 0.1 Revised - Deleted 44-TSOP2-400R package type.