1024X8 MEMORY Search Results

1024X8

Abstract: tws 1000
Contextual Info: d210002 1024X8, Mux 16, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 1024X8 SRAM is a high-performance, synchronous single-port, 1024-word by 8-bit memory designed to

Contextual Info: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)

82S181/BJA

Abstract: 82S181 1024x8 PROM
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM 1024x8 82S181 FEATURES DESCRIPTION • Address access time: 90ns max • Input loading: -150µA max • On-chip address decoding • Four chip enable inputs

64X128

Abstract: 53RS881 53RS881A 63RS881 63RS881A 1024X8
Contextual Info: 53/63RS881/A Advanced Micro Devices High Performance 1024x8 Registered PROM FEATURES/BENEFITS APPLICATIONS • Edge triggered “D" registers • Microprogram control store • Synchronous and asynchronous enables • State sequencers • Versatile 1:16 initialization words

Contextual Info: A m 2130 1024x8 Dual-Port Static Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • • BUSY function to handle contention - Open drain for OR-tied operation Automatic power down CE Output Enable function (5E) Both ports operate independently

82S181A

Abstract: 82S181A/B3A
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM 1024x8 82S181A FEATURES DESCRIPTION • Address access time: 55ns max • Input loading: -150µA max • On-chip address decoding • Four chip enable inputs

27S181

Contextual Info: Am27Sl80/27S181/PS181 Am27S280/27S281/PS281 8,192-Bit 1024x8 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction

Contextual Info: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable titanium-tungsten fuses TIW guaran­ tee greater than 98% programming yields

AM27S35

Abstract: AM27S35A CD3024 PD3024 1024x8 PROM
Contextual Info: Am27S35/S35A/Am27S37/S37A _ „ Advanced Micro Devices 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1/3 the board space required by standard

25c08v

Abstract: 25C16LI CAT25160 25C16VI 25C08 25C16 AEC-Q100 CAT25C08 CAT25C16 25C08L
Contextual Info: Not Recommended for New Design, Replace with CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits.

723CL

Abstract: AM27S281PC 27s181 AM27S181 27S181A AM27S181PC AM27S181A 27S281
Contextual Info: Am27S181 /27S181A Am27S281 /27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast

M2130

Contextual Info: Am2130/Am2140 AdVM“ o 1024x8 Dual-Port Static Random-Access Memories Devices DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using

53S881

Abstract: 53S881A 63S881 63S881A 1024x8 PROM MEQ1 e2723
Contextual Info: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Reliable titanium-iungsten fuses TIW guaran­ tee greater than 98% programming yields • Low voltage generic programming

1024x8 PROM

Contextual Info: c, MmoHMb m Memories High Performance 1024x8 PROM 5 3 /6 3 S 8 8 0 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A / / / / / / / / / ////////////////////////////////////A DVA NCE INFORMATION Features/ Benefits Applications • 8192-blt memory • Microprogram control stores

AM27S181

Abstract: 27s181 27s181a AM27S181/BJA AM27S181A CERAMIC LEADLESS CHIP CARRIER LCC 24 AM27S181PC
Contextual Info: Am27S181/27S181A Am27S281/27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast

S2152

Contextual Info: AMI _S2000/S2150/A/S2152 AMERICAN MICROSYSTEMS, SINGLE-CHIP MICROCOMPUTERS Features □ □ □ □ □ □ □ □ 1024X8 Program ROM On-Chip; Externally Expandable to 8192X 8—S2000 1536X 8 Program ROM On-Chip; Externally Expandable to 8192X8—S2150

eeprom 25080

Abstract: 25080 948AL CAT25080 CAT25160 Q100 25080 eeprom 1024x8
Contextual Info: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

25c08v

Abstract: 25C16VI 25C16V cat25c08 25Y08 24C168
Contextual Info: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/

25160D

Abstract: s08d 25080D CAT25080YE-G eeprom 25080 UDFN8 254
Contextual Info: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

25160D

Abstract: eeprom 25080
Contextual Info: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

5218 chip ic

Abstract: 53S881F
Contextual Info: ADV M IC R O 14‘ E D I MEMORY 0257555 0027871 a 2 5 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS T APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable tltanlum-tungsten fuses TiW guaran­

25160D

Abstract: eeprom 25080 25080 eeprom
Contextual Info: CAV25080, CAV25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAV25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

AM27S181

Abstract: 27S181
Contextual Info: Am27S181 /27S181A Am27S281 /27S281A Advanced Micro Devices 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Platinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming yields (typ > 98%) Rapid recovery from power-down state provides mini­

AM27S35

Abstract: AM27S35A AM27S37 AM27S37A CD3024 PD3024
Contextual Info: Am27S35/S35A/Am27S37/S37A 1H rt Advanced Micro Devices 8 ,1 92-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1 /3 the board space required by standard