1024X128 Search Results

R7600-M64

Abstract: S10362-11-100C circuit diagram of a laser lighter
Contextual Info: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights

SM-1994

Contextual Info: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The

27HC128

Abstract: 27HC128-45 27HC128-55 direct replacement
Contextual Info: 27HC128 O.T.P. One Time Programmable 128K 16K X 8 EPROMs Preliminary Specification Application Specific Products DESCRIPTION FEATURES The 27HC128 CMOS, O.T.P. EPROM is a high-speed electrically programmable Read Only Memory. It is organized as 16,384 words of 8 bits and operates

da53

Abstract: DB26 DL010
Contextual Info: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 1Mx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application

Contextual Info: PF805-05 SRM20V100LLMX7/SLMX7 1M-Bit Static RAM ge lta o V n w tio Lo pera cts O odu Pr ● Low Supply Voltage ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns 2.7V ● 131,072 Wordsx8-bit Asynchronous • DESCRIPTION The SRM20V100LLMX7 / SLMX7 is an 131,072 wordsx8-bit asynchronous, static, random access memory on a

K4R761869A-GCT9

Abstract: K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1
Contextual Info: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

S25FL129

Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
Contextual Info: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,

Contextual Info: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

Contextual Info: MBM27C1001-20 1/2 IL00 * C-MOS 1M(131072x8)-BIT EPROM -TOP VIEW- 1 VPP VDD (+5V) 32 12 11 10 A16 IN 2 31 PGM IN 9 8 A15 IN 3 NC 30 7 6 A12 IN 4 29 A14 IN A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 4 A5 IN 7 26 A9 IN 28 29 A4 IN 8 25 A11 IN

HY62QF16200A

Contextual Info: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

Contextual Info: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention

Atmel 652

Abstract: AT65609EHV AT65609EHV-DJ40SR Atmel+652
Contextual Info: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)

Contextual Info: [AK4137] = Preliminary = AK4137 32bit SRC with PCM/DSD conversion 1. General Description The AK4137 is a 2ch digital sample rate converter SRC . The input sample rate ranges from 8kHz to 768kHz. The output sample rate is from 8kHz to 768kHz. The AK4137 has an internal Oscillator.

XOP1

Abstract: 256-288 MBit Direct RDRAM K4R761869A-FCM8 K4R761869A-FCT9
Contextual Info: Preliminary Direct RDRAM K4R521669A/K4R761869A 512/576Mbit RDRAM A-die 1M x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R521669A/K4R761869A Change History Version 1.4( July 2002) - Preliminary

Contextual Info: CONFIDENTIAL = Preliminary = [AK4137] AK4137 32bit SRC with PCM/DSD conversion 1. 概 要 AK4137 は 2ch のディジタルサンプルレートコンバータ（SRC）です。入力された 8kHz～768kHz の 範囲にあるサンプルレートのオーディオソースを 8kHz～768kHz のサンプルレートに変換して出力し

0120d

Contextual Info: RDRAM 512Mb 1024Kx16/18x32s Advance Information Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

Contextual Info: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

SRM20V100LLKT7

Abstract: SRM20V100LLMT7 SRM20V100LLRT7 SRM20V100LLTT7 SRM20V100LLYT7 SRM20V100SLKT7 SRM20V100SLMT7 SRM20V100SLRT7 SRM20V100SLTT7 YT SOP6
Contextual Info: PF863-03 SRM20V100LLMT7/SLMT7 1M-Bit Static RAM ge lta o V n w tio Lo pera cts O odu Pr ● Low Supply Voltage ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns 2.7V ● 131,072 Wordsx8-Bit Asynchronous • DESCRIPTION The SRM20V100LLMT7/SLMT7 is an 131,072 words×8-bit asynchronous, static, random access memory on a

K4R521669A

Contextual Info: K4R521669A /K4R761869A for short channel 1066 MHz Preliminary Direct RDRAM 512/576Mbit RDRAM A-die 1M x 16/18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R521669A /K4R761869A for short channel 1066 MHz

SRM20V100LLKX7

Abstract: SRM20V100LLMX7 SRM20V100LLRX7 SRM20V100LLTX7 SRM20V100LLYX7
Contextual Info: PF805-04 SRM20V100LLMX77 SRM20V100LLMX 1M-Bit Static RAM ge lta Vo ion w t Lo pera cts O odu Pr ● Low Supply Voltage ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns 2.7V ● 131,072 Wordsx8-Bit Asynchronous • DESCRIPTION The SRM20V100LLMX 7 is an 131,072 words×8-bit asynchronous, static, random access memory on a monolithic

K4R761869A

Abstract: K4R761869A-FCM8 K4R761869A-FCT9
Contextual Info: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.4 September 2003 Page -1 Version 1.4 Sept. 2003 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

S25FL256

Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Contextual Info: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:

K4R761869A

Abstract: K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1 K4R761869A-GCT9
Contextual Info: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

UAA 1006

Contextual Info: 浜松ホトニクスの HOT な情報マガジン［ハマホット］ 2010 夏 vol.6 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL：053-452-2141 FAX：053-456-7889 jp.hamamatsu.com キリトリ線 2009年12月 代表取締役社長就任