1024 X 8 PROM Search Results

memory EPROM 2708

Abstract: F2708 F2708-1
Contextual Info: F2708 1024 x 8 UV Erasable PROM MOS Memory Products Logic Symbol Description The F2708 is an 8,192-bit ultraviolet light Erasable and electrica lly Programmable Read Only Memory EPROM manufactured using the Isoplanar n-channel silicon gate technology. Organized 1024 x 8 , the

93C76

Abstract: 200B 93C86 BSY29
Contextual Info: 93C76/86 8K/16K 5.0V CMOS Serial EEPROM FEATURES PIN CONFIGURATION • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8 or 512 x 16 bit organization 93C76 2048 x 8 or 1024 x 16 bit organization (93C86)

Contextual Info: TBP28SA86A 8192 BITS 1024 WORDS BY 8 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP28SA86A TBP28SA86A JW OR NW PACKAGE PROM 1024 X 8 AOA1A2A3A4- (TOP VIEW) (8 ) (7) A£ (6) AÛ (5) (4) A£ (3) A 5( 2)

Contextual Info: TBP28S86A 8192 BITS 1024 WORDS BY 8 BITS STANDARD PROGRAM M ABLE READ-ONLY M EM ORIES WITH 3-STATE OUTPUTS logic symbol pin assignment TBP28S86A TBP28S86A JW OR NW PACKAGE (TOP VIEW) PROM 1024 X 8 (8 ) AOA1- (7) A2- (5) A3- (4) A4- (3) ( 2) A 5A 6- 1023

TBP28L22

Contextual Info: TBP28L86A 8192 BITS 1024 WORDS BY 8 BITS LOW-POWER PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP28L86A TBP28L86A JW OR NW PACKAGE PROM 1024 X 8 AOA 1A 2A 3A4A 5A6A7A8 A9- (7) G2 G1 AV AV AV ( 6) (5) (4) (3) 1023 (2)

24 pin outputs decoder ic

Abstract: 716J 24 pin decoder 8 output
Contextual Info: 93Z450/93Z451 1024 x 8-Bit Programmable Read Only Memory FAIRCHILD A Schlum berger Company Memory and High Speed Logic Description The 93Z450 and 93Z451 are fully decoded 8,192-bit Programmable Read Only Memories PROMs , organized 1024 words by eight bits per word. The two

BL7448SM

Abstract: 20KHZ BL7448
Contextual Info: BL7448SM Intelligent 8K-bit EEPROM Description BL7448SM is an IC Card chip module made by 0.35um CMOS EERPOM process. It has 1024 byte EEPROM with logical encryption and function. Figure 1 Features • • • • • • • • • 1024 x 8 bit EEPROM organization

Contextual Info: TBP24S41 4096 BITS 1024 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP24S41 TBP24S41 J OR N PACKAGE PROM 1024 X 4 «TOP VIEW) (5) AO- (6 ) A1A2- A6C 1 A5C 2 A4 C 3 A3 C 4 3 vcc 3 A7 16 3 A 8

MK2716T

Abstract: MKB2716-87 MK2716 MKB2716-88 MKB2716-90 Mostek
Contextual Info: MOSTEK 2048 x 8-BIT UV ERASABLE PROM Processed to MIL-STD-883, Method 5004, Class B M K B 2 7 1 6 T /J -8 7 /8 8 /9 0 FEATURES □ Extended operating tem perature (~55°C =£ TA < 100°C) □ Replacement for popular 1024 x 8 bit 2708 type EPROM □ Single +5 volt power supply during READ operation

A0416

Contextual Info: IS24C01 W 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM M ADVANCE INFORMATION APRIL 1998 OVERVIEW FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 |aA • Hardware write protection — Write control pin • Internally organized as128 x 8

M 82S181

Abstract: 82S180 82S181 N82S181 S82S181
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.

N82S181

Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.

27L08-45

Abstract: 2708 eprom 27L08 2708-45 74LS TTL 245 TMS 2708 JL a1023 ansi y32.14 diagram 2708 memory TMS2708
Contextual Info: TMS 2708-35 JL. TMS 2708-45 JL, TMS 27L08-45 JL 1024-WORD BY 8-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES MOS LSI D E C E M B E R 1 9 7 9 - R E V I S E D M A Y 1982 1024 X 8 Organization A ll Inputs and O utputs F ully T T L Compatible 24-PIN CER P AK D U A L -IN -L IN E PACKAG E

24LC08

Abstract: ATC24LC08 marking adr AM24LC02 AM24LC04 AM24LC08 AM24LC08I AM24LC08V AM24LC16 24lc08 atc
Contextual Info: ATC AM24LC08 2-Wire Serial 8K-Bit 1024 x 8 CMOS Electrically Erasable PROM General Description Features •State- of- the- art architecture - Non-volatile data storage - Standard voltage and low voltage operation (Vcc = 2.7V to 5.5V) for AM24LC08 • 2-wire I2C serial interface

Contextual Info: IMIi c r o c m 93C76/86 kp 8K/16K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization 93C76

25CC

Abstract: 82S183 N82S183 S82S183 8192-BIT
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 X 8 82S183 (T.S.) ABSOLUTE MAXIMUM RATINGS PARAMETER Vcc VIN ta Ts t g Supply voltage Input voltage Temperature range Operating N82S183 S82S183 Storage RATING UNIT +7 + 5 .5 Vdc V dc °C 0 to + 7 5

Contextual Info: M 93C76/86 ic r o c h ip 8K/16K 5.0V CMOS Serial EEPROM PIN CONFIGURATION FEATURES • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8 or 512 x 16 bit organization 9X 76

Contextual Info: & 93C76/86 M f C R O C H IP* 8K/16K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization 93C76

1024x8 PROM

Abstract: 82LS181 N82LS181 S82LS181
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 X 8 DESCRIPTION The 82LS181 is field programmable, which mea ns that custom patterns are immediately available by following the fusing procedure given in this data manual. The 82LS18I is supplied with all outputs at logical low. Out­

Contextual Info: $ M ic r o c h ip 93C76/86 8K/16K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Single 5.0V supply DIP Package • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization 93C76

Intel 8245

Abstract: 87S181 63S881 AM27S181 82HM181 TBP28S86 M7581 RAYTHEON ROM Bipolar ROM 1K X 4 Intel 8244
Contextual Info: 1 0 2 4 X 82H M 181 8 1 9 2 Bit 8 HMOS ROM GENERAL DESCRIPTION • • • • • • • • • The 82HM181 Is a high speed 8,192 b it read-only memory (ROM) organized 1024 words by 8 bits. The device is fabricated using In te rsil’s SELOX HMOS technology, a

CY7C235A

Contextual Info: 1CY 7C23 5A CY7C235A 1K x 8 Registered PROM Features • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • High speed Functional Description — 18 ns address set-up The CY7C235A is a high-performance 1024 word by 8 bit electrically programmable read only memory packaged in a slim

Contextual Info: CY7C235 CYPRESS SEMICONDUCTOR 1024 x 8 Registered PROM Features • CMOS for optimum speed/power • 5V +10% V cc, commercial and military • High speed — 25 ns max set-up — 12 ns dock to output • TTL compatible I/O • Low power — 495 mW commercial

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT SILICON GATE C M O S 2, 64-MBIT 8M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND "E2PRQM) organized as 528 bytes X 16 pages X 1024 blocks.