101BA Search Results

BGA-101P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

32 KB SRAM

Abstract: DS05-50208-1E SWITCH SA125
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash

4kw marking

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance

32 KB SRAM

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash

TFBGA196

Abstract: 110C LVCMOS25 QL8025 QL8050 QL8150 QL8250 QL8325 QL6250E OA47
Contextual Info: Eclipse II Family Data Sheet • • • • • • Ultra-Low Power FPGA Combining Performance, Density, and Embedded RAM Device Highlights Advanced Clock Network • Multiple dedicated low skew clock networks Flexible Programmable Logic • High drive input-only networks

MBM29DL640E

Abstract: JEDEC FBGA
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-4E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-85/90 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V for FCRAM

MB84VD23381EF-90

Abstract: MBM29DL640E MBM29DL640
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD23381EF-90 • FEATURES • Power supply voltage of 2.7 to 3.0V for FCRAM • Power supply voltage of 2.7 to 3.3V for Flash

ABB RADHA HIGH IMPEDANCE DIFFERENTIAL RELAY

Abstract: RK 646 RADHA NON-LINEAR RESISTOR 1mrk 002 101-BA 48c60 RTXP 18 RADHA 101BA 015-BEN
Contextual Info: High impedance differential relay RADHA 1MRK 509 015-BEN Page 1 Issued: April 2006 Revision: C Data subject to change without notice xx03000048 (se970893) Features • Secure operation, not affected by CT saturation • Voltage limiting resistors • High speed operation, typical one cycle

SGA17

Contextual Info: IS71V08F32XS08 IS71V16F32XS08 ISSI 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70ns maximum access time

jedec package TFBGA 12

Abstract: 100 pin vqfp drawing LBGA thermal 8mm pitch BGA 256 pin 14x14 QUICKLOGIC SDIO Host
Contextual Info: PolarPro Solution Platform Family Data Sheet •••••• Family of Solution Platforms Integrating Low Power Programmable Fabric and Embedded SRAM Platform Highlights Flexible Programmable Fabric • 8 to 240 customizable building blocks CBBs (see

MBM29DL640E

Abstract: MB84VD23380EF-90 F0006
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD23380EF-90 • FEATURES • Power supply voltage of 2.7 to 3.0V for FCRAM • Power supply voltage of 2.7 to 3.3V for Flash

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash

3SB23 04-2A siemens

Abstract: 3SB24 3SB12 01 3ta21 siemens IEC 60947 VDE 0660 3SB14 00-0C siemens 3SB36 Sirius 3SB3 3SB14 3sb29
Contextual Info: Commanding and Signaling Devices Introduction • Overview 3SB2 3SB30, 3SB32 3SB31, 3SB33 3SB35, 3SB36 16 mm Plastic, round 22 mm Plastic, round 22 mm Plastic, square 22 mm Metal, round ✔ ✔ -✔ ✔ ✔ ✔ ✔ ✔ ✔ ✔ -✔ ✔ ✔ ✔ ✔ ✔ ✔

A0-A21

Contextual Info: ISSI IS71VPCF64GS08 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 64 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.1V • High performance: FLASH FEATURES • Power Dissipation:

SIVOLT

Abstract: 3RF29 MINIATURE CIRCUIT BREAKER siemens 5sx2 mcb tripping curves siemens 3RF21 30-1AA45 3RF24 Sirius 3Rf 5Sx2 siemens 202C04 30-2AC45
Contextual Info: Siemens AG 2010 Solid-State Switching Devices for Resistive Loads General data • Overview Type Solid-state relays 1-phase Solid-state contactors Function modules Basic Extended Heating Power current controllers monitoring Power regulators - - - -

10100XXX

Contextual Info: ISSI IS71VPCF16XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 16 Mbit Simultaneous Operation Flash PRELIMINARY Memory and 4 Mbit Static RAM INFORMATION MAY 2002 MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance:

100000H-10FFFFH

Contextual Info: ISSI IS71VPCF16XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 16 Mbit Simultaneous Operation Flash PRELIMINARY Memory and 4 Mbit Static RAM INFORMATION JUNE 2002 MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance:

Contextual Info: IS71V08F32XS08 IS71V16F32XS08 ISSI 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES PRELIMINARY INFORMATION FEBRUARY 2002 • Ready-Busy output (RY/BY): Detection

IS71VPCF16XS04

Contextual Info: ISSI IS71VPCF16XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 16 Mbit Simultaneous Operation Flash PRELIMINARY Memory and 4 Mbit Static RAM INFORMATION JUNE 2002 MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance:

QUICKLOGIC SDIO Host

Abstract: nand flash sdio quicklogic
Contextual Info: PolarPro Solution Platform Family Data Sheet •••••• Family of Solution Platforms Integrating Low Power Programmable Fabric and Embedded SRAM Platform Highlights Flexible Programmable Fabric • 8 to 240 customizable building blocks CBBs (see

32 KB SRAM

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash

ADVANCED MICRO DEVICES

Abstract: AE2E MB84LD23380EF-10
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD23380EF-10 • FEATURES • Power supply voltage of 2.3 to 2.7V for FCRAM • Power supply voltage of 2.3 to 2.7V for Flash