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    onsemi NTND31015NZTAG

    Dual N-Channel Small Signal MOSFET 20V, 200mA, 1.5O - Tape and Reel (Alt: NTND31015NZTAG)
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    Avnet Americas () NTND31015NZTAG Tape & Reel 24,000
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    NTND31015NZTAG Tape & Reel 65 Weeks 16,000
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    Newark NTND31015NZTAG Tape & Reel 8,000
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    Bristol Electronics NTND31015NZTAG 16,000 1
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    Rochester Electronics NTND31015NZTAG 62,528 1
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    TME NTND31015NZTAG 8,000
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    Avnet Silica NTND31015NZTAG 17 Weeks 8,000
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    EBV Elektronik NTND31015NZTAG 18 Weeks 8,000
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    Flip Electronics NTND31015NZTAG 71,132
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    Master Electronics NTND31015NZTAG
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    Win Source Electronics NTND31015NZTAG 62,500
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    Glenair Inc M85049/10-15N

    - Bulk (Alt: M85049/10-15N)
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    Avnet Americas M85049/10-15N Bulk 3 Weeks 1
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    Newark M85049/10-15N Bulk 1
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    Interstate Connecting Components M85049/10-15N
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    Pulse Electronics Corporation JX3V-1015NL

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    Pulse Electronics Corporation BWHC0018121015NK00

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    Pulse Electronics Corporation BWHC0018121015NG00

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    1015N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: B U R R -B R O W N OPA103 Low Drift - Low Bias Current FET Input OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • CURRENT TO VOLTAGE CONVERSION • LOW BIAS CURRENT. IpA, max • LONG TERM PRECISION INTEGRATION • HIGH INPUT IMPEDANCE, 1015n • PRECISION VOLTAGE AMPLIFICATION FOR


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    C57401AJ

    Abstract: C57401J/883B M38510 numbering C57402AJ AMD - C57401J MMI PAL14L8 5962-8779105EX 53RA1681 C57401L
    Contextual Info: M ilitary Specialty Memory Whatever your military data buffering needs, Advanced Micro Devices has the right specialty memory device to fit your applica­ tion. All of our military bipolar and CMOS First-in First-out FIFO memories are fully screened to MIL-STD-883.


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    mil-std-88357c40157c40257c4013+1457c402320-lead24-lead20-terminal28-terminalc57401ajc57401j/883bm38510 numberingc57402ajamd - c57401jmmi pal14l85962-8779105ex53ra1681c57401l PDF

    OPA104CM

    Abstract: opa104 OPA104AM A104
    Contextual Info: BURR-BROW N CORP S2E D • 17313bS 001b3T3 3 ■ T-THS BU R R -B R O W N 0 P A 1Q4 c Ultra-Low Bias Current Low Drift FET Input OPERATIONAL AMPLIFIER c FEATURES APPLICATIONS • SPECIFICATIONS GUARANTEED OVER TEM PERATURE • CURRENT TO VOLTAGE CONVERSION


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    5.5MHz ceramic Filter

    Abstract: TOKO 455KHz ceramic filter ceramic filter 5.5mhz filter 455khz Toko variable coil 7mm 455KHz IF npo 22j Ceramic filter 455khz Murata 455KHz TOKO ceramic filter NE605
    Contextual Info: Product specification Philips Semiconductors Low-voltage high performance mixer FM IF system_ DESCRIPTION The SA608 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,


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    sa60820-leadne605455khz+95.5mhz ceramic filtertoko 455khz ceramic filterceramic filter 5.5mhzfilter 455khztoko variable coil 7mm 455khz ifnpo 22jceramic filter 455khzmurata 455khztoko ceramic filter PDF

    ma31750

    Contextual Info: w GEC PLESS EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS3569-2.4 MA31752 16-BIT FEEDTHROUGH ERROR DETECTION & CORRECTION UNIT EDAC The MA31752 is a 16 bit Error Detection and Correction Unit intended for use in a high integrity system for monitoring


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    ds3569-2ma3175216-bit68-pin+4ma317s0dfo-161a317s2ma31750 PDF

    TOKO CERAMIC FILTER 455

    Abstract: SFG455A3 NES05 TOKO 455KHz ceramic filter Ceramic filter 455khz murata 455KHz ceramic filter vogt l4 SA607 SA607D SA607DK
    Contextual Info: Philips, Semiconductors Product specification Low-voltage high performance mixer FM IF system DESC R IPTIO N The SA607 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, •


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    sa60720-leadnes05711dfistj+8toko ceramic filter 455sfg455a3toko 455khz ceramic filterceramic filter 455khzmurata 455khz ceramic filtervogt l4sa607dsa607dk PDF

    MA7001

    Abstract: l 0315
    Contextual Info: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces January 2000 version, DS3519-5.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process


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    ma7001512x9ds3519-51015n/cm2+1l 0315 PDF

    Contextual Info: GEC PLESSEY S E M I C O N D U C T O R S DS3518-3.2 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's CMOS-SOS high perform ance, radiation hard, 3jim technology. The GPS Silicon-on-Sapphire process provides significant


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    ds3518-3ma70011015n/cm2mil-std-883+41x1051x10121x101537bfls22 PDF

    811F

    Abstract: audio limiter ic RMC-2A6597H
    Contextual Info: Philips Sem iconductors P ro du ct specification High performance low power mixer FM IF system with high-speed RSSI DESCRIPTION . . . . bAb" PIN CONFIGURATION The SA625 is pin-to-pin compatible with the SA605, but has faster RSSI rise and fail times. The SA625 is a high performance


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    sa625sa605signetics1sa602asa624+420-lead811faudio limiter icrmc-2a6597h PDF

    75fAmax

    Abstract: ADS24
    Contextual Info: A N A LO G D E V IC E S FEATURES Ultralow Bias Current: Low Low Low Low Monolithic Precision, Low Power FET-lnput Electrometer Op Amp AD515A* PIN CONFIGURATION 75fA max AD515AL 1SOfA max (AD515AK) 300fA max (AD515AJ) Power: 1.5mA max Quiescent Current (0.6mA typ)


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    Zener Diodes 300v

    Abstract: ge VARISTOR DATA SHEET GE-MOV AN9307 zener diode 20a varistors crossed 22b zener diode 1015n ge varistor 250a diode zener ZL 15
    Contextual Info: Harris Semiconductor No. AN9307.1 Harris MOVs March 1995 The Connector Pin Varistor for Transient Voltage Protection in Connectors Authors: Paul McCambridge and Martin Corbett Introduction Nonlinear devices have long been used for transient voltage protection and have bee available in conventional package


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    an930773sd23gzener diodes 300vge varistor data sheet+7ge-movzener diode 20avaristors crossed22b zener diode1015nge varistor 250adiode zener zl 15 PDF

    relay 12 volts ras 1210

    Abstract: GE-MOV 275L40B MOV GE V150 LA10 275l40b Disc ceramic capacitor GE 130L20 hahn transformer VDE 0551 ge 130l10 c106d spice HARRIS V481DB40 G1 capacitor 275L20
    Contextual Info: $5.00 Technical Assistance Transient Voltage Suppression Technical Assistance Electronic Technical Support Ask our experienced staff of engineers for assistance with: Electronic services from Littelfuse offer you the most current information possible. • Device Selection


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    relay 12 volts ras 1210ge-mov 275l40bmov ge v150 la10275l40b+6disc ceramic capacitor ge 130l20hahn transformer vde 0551ge 130l10c106d spiceharris v481db40 g1capacitor 275l20 PDF

    Contextual Info: M GEC PLESS EY S E M I C O N D U C T O R S D S 3 5 1 8 -2 .4 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's C M O S -S O S high p e rfo rm a n c e , ra d ia tio n ha rd, 3n.m technology. The GPS Silicon-on-Sapphire process provides significant


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    ma70011015n/cmamil-std-8831x105+137bfls22 PDF

    EN1122

    Abstract: EPA3050B
    Contextual Info: RS Components Part # 6655861 - RG 59 B/U Black PVC, 100m Design Inner conductor Braid shield Part NO: RGW-591 Product Code: RG59 B-U PVC Product Description Application: For communication and signal control systems. Reference Standard Customer's sample spec.and the general standard


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    rgw-59101x16x910-15n75ohm+4en1122epa3050bepa3052epa3060 PDF

    diode zener ZL 15

    Abstract: gemov AN9769 varistor fail GE-MOV Metal Oxide Varistor 300v diode zener ZL 10 diode zener ZL 20 VARISTOR
    Contextual Info: Harris Semiconductor No. AN9307.2 Harris Suppression Products January 1998 The Connector Pin Varistor for Transient Voltage Protection in Connectors Authors: Paul McCambridge and Martin Corbett Introduction Nonlinear devices have long been used for transient voltage


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    an9307100lbs30lbs14lbs+9diode zener zl 15gemovan9769varistor failge-movmetal oxide varistor 300vdiode zener zl 10diode zener zl 20varistor PDF

    AD545

    Abstract: 200f3
    Contextual Info: A N A LO G D E V IC E S FEATURES Low Offset Voltage: 0.5mV max AD545AL 0.25mV max (ADS45AM) Low Offset Voltage Drift: 5|iV/°C max (AD545AL), 3|iV/°C max (AD545AM) Low Power: 1.5mA max Low Bias Current: IpA max (AD545AK, L, M) Low Noise: 3|>V p-p, 0.1Hz to 10Hz


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    toko 303LN

    Abstract: n16k
    Contextual Info: Product specification Philips Semiconductors Low-voltage high performance mixer FM IF system_ DESCRIPTION The SA608 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,


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    sa60820-leadne605toko 303ln+1n16k PDF

    A606M

    Abstract: U455D
    Contextual Info: Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system_ SA606 DESCRIPTION PIN CONFIGURATION T he S A 6 0 6 is a lo w -vo lta g e high perform ance m onolithic FM IF system in co rp o ra tin g a m ixer/o scillator, tw o lim iting in term ediate


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    AD545A

    Abstract: AD545AJ AD545AK AD545AL AD545AM electrometer amplifier
    Contextual Info: ► ANALOG DEVICES Monolithic Precision, Low Drift FET-lnput Op Amp AD545A* PIN CONFIGURATION FEATU R ES Low Offset Voltage: 0.5mV max AD545AL 0.25mV max (AD545AM) Low Offset Voltage Drift: 5jjlV/°C max (ADS45AL), 3jjtV/°C max (AD545AM) • Low Power: 1.5mA max


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    MA7001

    Abstract: MAX7001 GEC 44 3A
    Contextual Info: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces June 1999 version, DS3519-4.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process


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    ma7001512x9ds3519-41015n/cm2+2max7001gec 44 3a PDF

    PH 33J

    Abstract: w6553 LM 385 N W34400 44811 Winslow W3480 W35500 W36600 W62200
    Contextual Info: W3480 W62200 W34400 W65520 W35500 Series W36600 Single in Line Products • • • • • Sockets — Headers — Connectors Screw machine & stamped contacts Very wide range plus “Snap Apart” makes any size from 1 to 32 contacts UL 94 V -0 approved material


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    electrometer

    Abstract: ad515a application notes AD515A AD515AJ AD515AK AD515AL kelf shields oxygen sensor operational amp
    Contextual Info: ANALOG ► DEVICES FEATURES Ultralow Bias Current: Low Low Low Low 75fA max AD515AL 150fA max (AD515AK) 300fA max (AD515AJ) Power: 1.5mA max Quiesçent Current (0.6mA typ) Offset Voltage: I.OmV max (AD515AK & L) Drift: 15|*V/*C max (AD515AK) Noise: 4 |iV p-p, 0.1Hz to 10Hz


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    ad515al150faad515akad515aj+7ads15aad515aad51selectrometerad515a application noteskelf shieldsoxygen sensor operational amp PDF

    Contextual Info: COUNT DESCRIPTION OF REVISIONS BY CHKD DATE I DESCRIPTION OF REVISIONS COUNT I BY CHKD DATE I AP PLIC A TIO N S T A N D A R D OPERATING TEMPERATURE RANGE STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE -55 “t TO +85 “C RATING VOLTAGE 125 V AC I¡CURRENT


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    fx2-80p-0635sh PDF

    Contextual Info: ► ANALOG DEVICES Monolithic Precision, Low Drift FET-lnput Op Amp AD545A* FEA TU R ES PIN CONFIGURATION Low Offset Voltage: 0.5mV max AD545AL 0.25mV max (AD545AM) Low Offset Voltage Drift: 5jjlV/°C max (ADS45AL), 3jjtV/°C max (AD545AM) • Low Power: 1.5mA max


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