1010F Search Results

Contextual Info: MN101C42 Series MN101C425 Type MN101C427 MN101CP427 Mask ROM Internal ROM type EPROM ROM byte 8K 16K RAM (byte) 0.25K 0.5K QFP044-P-1010F, SDIP042-P-0600C, TQFP048-P-0707B 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

Contextual Info: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.

Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010F *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

Contextual Info: DIE PRODUCTS BURR-BROW N* INAI 01 DIE 1 E Very High Accuracy INSTRUMENTATION AMPLIFIER DIE FEATURES DESCRIPTION • LOW OFFSET VOLTAGE • HIGH INPUT IMPEDANCE: 1010fi • LOW NOISE: 13nV/Vfiz at f0 = 1kHz The INA101AD is a high accuracy, monolithic instru­

MN103SfC2d

Abstract: mn103sc2a
Contextual Info: MN103SC2 Series Type Internal ROM type MN103SC2A MN103SFC2D Mask ROM FLASH 32K ROM byte 64K 4K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP044-P-1010F 16.7 ns (at 4.5 V to 5.6 V, 10 MHz) * at internal 6 times oscillation used 16.7 ns (at 4.5 V to 5.6 V, 10 MHz)

AN15862A

Contextual Info: DATA SHEET Part No. AN15862A Package Code No. QFP044-P-1010F SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Publication date: June 2007 SDB00146AEB 1 AN15862A Contents „ Overview ………….………………………………………………………………………………………………. 3

MN101C94

Abstract: PX-PRB101C94-QFP044-P-1010
Contextual Info: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.

Contextual Info: MN101C94A Type MN101C94A ROM x× 8-bit 32 K RAM (×× 8-bit) 1K Package QFP044-P-1010F *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* * The lower limit for operation guarantee for flash memory built-in type is 2.5 V.

Contextual Info: MN101C45 Series Type MN101C457 MN101CP427 Internal ROM type Mask ROM EPROM ROM byte 16K RAM (byte) 0.5K Package (Lead-free) Minimum Instruction Execution Time QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)

AN17883A

Abstract: QFP044-P-1010F
Contextual Info: Part No. AN17883A Package Code No. QFP044-P-1010F Publication date: November 2006 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur

MN101C97D

Abstract: MN101C97A MN101CF97D QFP044-P-1010F TQFP048-P-0707B
Contextual Info: MN101C97 Series MN101C97A Type MN101C97D MN101CF97D Mask ROM Internal ROM type FLASH 32K ROM byte 64K 1K RAM (byte) QFP044-P-1010F (ES (Engineering Sample) available), TQFP048-P-0707B 0.25 µs (at 2.2 V to 3.6 V, 8 MHz) 0.5 µs (at 1.8 V to 3.6 V, 4 MHz)

design of PROCESS CONTROL TIMER

Abstract: AN10 AN11 QFP044-P-1010F TQFP048-P-0707B real life application of PROCESS CONTROL TIMER MN101EF51A
Contextual Info: MN101E51 Series MN101EF51A Type FLASH Internal ROM type ROM byte 32K RAM (byte) 1K Package (Lead-free) Minimum Instruction Execution Time QFP044-P-1010F (Under development), TQFP048-P-0707B (Under planning) 50 ns (2.7 V to 5.5 V) 125 ns (1.8 V to 5.5 V)

Contextual Info: MN101C78A Type MN101C78A under development ROM (x× 8-bit) 32 K RAM (×× 8-bit) Package 1.5 K TQFP048-P-0707B *Lead-free (under development), QFP044-P-1010F *Lead-free (under planning) Minimum Instruction Execution Time 0.1 µs (at 3.0 V to 3.6 V, 10 MHz)

MN101C427

Contextual Info: MN101C425 , MN101C427 Type MN101C425 MN101C427 ROM x× 8-bit 8K 16 K RAM (×× 8-bit) 0.25 K 0.5 K Package (Conventional Package) SDIP042-P-0600C *Lead-free, TQFP048-P-0707B *Lead-free , QFP044-P-1010F *Lead-free (SDIP042-P-0600) Minimum Instruction Execution Time

Contextual Info: MN103SC2 Series MN103SC2A Type MN103SC2D MN103SFC2D Mask ROM Internal ROM type FLASH 32K ROM byte 64K 4K RAM (byte) QFP044-P-1010F Package (Lead-free) Minimum Instruction Execution Time 16.7 ns (4.5 V to 5.5 V) • Interrupts 8 external interrupts 18 internal interrupts: Watchdog timer. Timer. Serial I/F. PWM. A/D conversion finish. System error

1010f

Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010F *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010F *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

ACZ1

Contextual Info: MN101C78A Type MN101C78A under development ROM (x× 8-bit) 32 K RAM (×× 8-bit) Package Minimum Instruction Execution Time Interrupts Timer Counter 1.5 K TQFP048-P-0707B *Lead-free (under development), QFP044-P-1010F *Lead-free (under planning) 0.1 µs (at 3.0 V to 3.6 V, 10 MHz)

Contextual Info: MN101C42 Series MN101C425 Type MN101C427 MN101CP427 Mask ROM Internal ROM type EPROM ROM byte 8K 16K RAM (byte) 0.25K 0.5K QFP044-P-1010F, SDIP042-P-0600C, TQFP048-P-0707B 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

MN103SfC2d

Abstract: PX-ICE-103SC2
Contextual Info: MN103SC2 Series Type Internal ROM type MN103SC2A MN103SFC2D Mask ROM FLASH 32K ROM byte 64K 4K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP044-P-1010F 16.7 ns (at 4.5 V to 5.6 V, 10 MHz) * at internal 6 times oscillation used 16.7 ns (at 4.5 V to 5.6 V, 10 MHz)

PX-ICE101C

Contextual Info: MN101C42 Series MN101C425 Type MN101C427 MN101CP427 Mask ROM Internal ROM type EPROM ROM byte 8K 16K RAM (byte) 0.25K 0.5K QFP044-P-1010F, SDIP042-P-0600C, TQFP048-P-0707B 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

Contextual Info: MN103SC2 Series Type Internal ROM type MN103SC2A MN103SFC2D Mask ROM FLASH 32K ROM byte 64K 4K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP044-P-1010F (ES (Engineering Sample) available) 16.7 ns (at 4.5 V to 5.6 V, 10 MHz) 16.7 ns (at 4.5 V to 5.6 V, 10 MHz)

Contextual Info: MN101C97 Series MN101C97A Type MN101C97D MN101CF97D Mask ROM Internal ROM type FLASH 32K ROM byte 64K 1K RAM (byte) QFP044-P-1010F (ES (Engineering Sample) available), TQFP048-P-0707B 0.25 µs (at 2.2 V to 3.6 V, 8 MHz) 0.5 µs (at 1.8 V to 3.6 V, 4 MHz)

Contextual Info: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* * The lower limit for operation guarantee for flash memory built-in type is 2.5 V.