100W RD100HHF1 Search Results

100W RD100HHF1 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CLF1G0035-100		Rochester Electronics LLC	CLF1G0035-100 - 100W Broadband RF power GaN HEMT	PDF
CLF1G0035-100P		Rochester Electronics LLC	CLF1G0035-100 - 100W Broadband RF power GaN HEMT	PDF
G45AA19121100W1HR		Amphenol Communications Solutions	HDMI 2.1	PDF
PTR08100WVD		Texas Instruments	10-A, 4.5V-14V Input, Non-Isolated, Wide Output, Adjustable Power Module 5-SIP MODULE -40 to 85
PCLVC2G100WBQBRQ1		Texas Instruments	Automotive two-channel 1.2V-to-3.6V configurable gate with flip-flop and Schmitt-trigger inputs 16-WQFN -40 to 125

100W RD100HHF1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor 1765 Abstract: rd100hhf1 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain:	Original	RD100HHF1 30MHz 30MHz RD100HHF1 transistor 1765	PDF
RD100HHF1 Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w	PDF
RD100HHF1 Abstract: RD100HHF1-101 hf amplifier 100w 10Turns mosfet HF amplifier transistor hf TRANSISTOR D 1765 68 0154 RD100HH RD 15 hf mitsubishi Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 RD100HHF1-101 hf amplifier 100w 10Turns mosfet HF amplifier transistor hf TRANSISTOR D 1765 68 0154 RD100HH RD 15 hf mitsubishi	PDF
100w amplifier RD100HHF1 Abstract: rd100hHf1 100w RD100HHF1 RD100HHF1-101 RD100HH hf amplifier 100w Contextual Info: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3	Original	RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 Oct2011 100w amplifier RD100HHF1 100w RD100HHF1 RD100HH hf amplifier 100w	PDF
pO115 Contextual Info: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3	Original	RD100HHF1 30MHz RD100HHF1 30MHz RD100HHF1-101 pO115	PDF
pO115 Abstract: rd100hhf1-101 transistor zg 100w RD100HHF1 RD 15 hf mitsubishi RD100HHF1 mitsubishi 100w Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 pO115 rd100hhf1-101 transistor zg 100w RD100HHF1 RD 15 hf mitsubishi mitsubishi 100w	PDF
RD 15 hf mitsubishi Abstract: RD100HHF1 RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 RD 15 hf mitsubishi RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH	PDF
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1	PDF