100V 20A SCHOTTKY POWER DIODE Search Results

Contextual Info: SEMICONDUCTOR B20A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A Tc=110 . Repetitive Peak Reverse Voltage : VRRM=100V.

MBRF20100CT

Abstract: 100v 20a schottky power diode
Contextual Info: SEMICONDUCTOR MBRF20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V. K

TC124A

Contextual Info: SEMICONDUCTOR MBR20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C ・Average Output Rectified Current F E : IO=20A. G B ・Repetitive Peak Reverse Voltage Q : VRRM=100V.

MBRF20U100CT

Abstract: AV2015 AV-2015 MBRF20U
Contextual Info: SEMICONDUCTOR MBRF20U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current DIM B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V.

MBRF20U100CT

Abstract: 100v 20a schottky power diode
Contextual Info: SEMICONDUCTOR MBRF20U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current DIM B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V.

B20A

Contextual Info: SEMICONDUCTOR B20A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A Tc=90 . Repetitive Peak Reverse Voltage : VRRM=100V.

MBR20100

Abstract: MBR20100CT
Contextual Info: SEMICONDUCTOR MBR20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C F Average Output Rectified Current E : IO=20A. G B Repetitive Peak Reverse Voltage Q : VRRM=100V. I

Contextual Info: SEMICONDUCTOR B20A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S ・Average Output Rectified Current B E G : IO=20A Tc=90℃ . ・Repetitive Peak Reverse Voltage : VRRM=100V.

MBRF20100CT

Abstract: JA60 AV-2015
Contextual Info: SEMICONDUCTOR MBRF20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V. K Fast Reverse Recovery Time : trr=35ns.

NTE6086

Abstract: diode schottky 1000V 10a
Contextual Info: NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection

diode schottky 1000V 10a

Abstract: "Dual Schottky Rectifier" NTE6086 10 AMP 1000V RECTIFIER DIODE
Contextual Info: NTE6086 Silicon Dual Schottky Rectifier 100V, 10 Amp, TO220 Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg

NTE6086

Abstract: NTE6088 diode schottky 1000V 10a
Contextual Info: NTE6088 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection

NTE6086

Abstract: diode schottky 1000V 10a
Contextual Info: NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection

Schottky diode 50A 100v

Abstract: diode schottky 200A DO-5 Package power diode 200A 100v schottky power diode
Contextual Info: OLTRONICS INC SO l>E|t,7?fl5IÌM □ODGD4S 4 Oltronics, Inc. D Power Schottky Diodes 148 Sidney St. • Cambridge, M A 02139 • Tel. 617 354-6534 Semiconductor O.E.M. THE MC SERIES DIODE MC Series Diodes are Schottky rectifiers of superior performance due to their stability at high

20H100C

Abstract: 100V 20A Schottky Common Anode Diode GMR20H100C GMR20H100CTB3T 100v 20a schottky power diode
Contextual Info: GMR20H100C 20A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. „ High junction temperature capability „ Good trade off between leakage current and forward voltage drop „

20H100C

Contextual Info: 20A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. ̈ High junction temperature capability ̈ Good trade off between leakage current and forward voltage drop ̈ Low leakage current

20H100C

Abstract: 100V 20A Schottky Common Anode Diode V103 100v 20a schottky power diode
Contextual Info: GMR20H100C 20A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. „ High junction temperature capability „ Good trade off between leakage current and forward voltage drop „

YA865C10

Abstract: YA865C10R
Contextual Info: YA865C10R 100V / 20A [200509] Outline drawings, mm 10+0.5 4.5±0.2 2.7±0.1 Ø3.6±0.2 1.2 Applications 14 -0.5 Low IR Low VF Center tap connection 3.7±0.2 15±0.2 Features 6.4±0.2 Low IR Schottky barrier diode 0.4 0.8 2.7 2.54 High frequency operation

100v 20a schottky power diode

Contextual Info: TS865C10R 100V/20A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

2a 200v schottky diode

Abstract: IXYS-VUM25-E IXYSVUM25-E Schottky diode TO220 DGS10-018A DGS10-025A DGS20-018A DGS20-025A DGSK20-018A ST Low Forward Voltage Schottky Diode
Contextual Info: EPE Conference, Lausanne, 1999 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany Fax: .49/6206/503-579 E-Mail: A.Lindemann@IXYS.de St. Knigge Ferdinand Braun Institute

20H100CTG

Abstract: 20H-1
Contextual Info: new pr od September 21, 2002 No. NPI-01 o f n i t c u Vishay Semiconductors Business Unit: Power Diodes Division New Product Announcement: MBR F (B)20H100CTG Schottky Rectifier Series Product Group: Further Information: Tel: Fax: e-mail: Rectifiers R.S. Chin

100N1

Contextual Info: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection

Contextual Info: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection

IXAN0041

Abstract: 2a 200v schottky diode Schottky diode TO220 IXYSVUM25-E power Diode 20A schottky diode ST DGS10-018A DGS10-025A ST Low Forward Voltage Schottky Diode DGS20-025A
Contextual Info: EPE Conference, Lausanne, 1999 IXAN0041 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany Fax: .49/6206/503-579 E-Mail: A.Lindemann@IXYS.de St. Knigge Ferdinand Braun Institute