|
20H1RD24X12LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RD24X15LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RD24X5LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RD48X15LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RD48X5LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RS24X12LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RS24X15LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RS24X3.3LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RS48X12LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RS48X15LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RS48X3.3LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
|
20H1RS48X5LC
|
|
M+R Multitronik
|
20 Watt: 2x1.6 Inch Metal Case H1: 4:1 Input Range |
Original |
PDF
|
84.78KB |
2 |
SBD20H150CTB
|
|
JCET Group
|
SBD20H150CTB and SBDF20H150CTB are 150V Schottky barrier rectifiers in TO-220-3L/TO-220F packages, featuring 20A average rectified current, 200A non-repetitive surge current, low forward voltage drop of 0.65V at 150°C, and operating junction temperature up to 175°C. |
Original |
PDF
|
|
|
HCKW40N120H1
|
|
VANGUARD
|
1200V 40A IGBT with Trench-FS technology, low Vcesat of 1.85V, integrated fast recovery diode, TO-247 package, suitable for high-frequency switching applications such as UPS, industrial welding, and SMPS. |
Original |
PDF
|
|
|
|
|
SBDF20H150CT
|
|
JCET Group
|
SBD20H150CT and SBDF20H150CT Schottky barrier rectifiers feature 150 V reverse voltage, 20 A average rectified current, low forward voltage drop of 0.69 V at 150 °C, guard ring die construction, and surge current capability of 200 A. |
Original |
PDF
|
|
|
SBDB20H150CTB
|
|
JCET Group
|
Schottky barrier rectifier SBDB20H150CTB with 150 V reverse voltage, 20 A average rectified current, low forward voltage drop of 0.65 V at 150°C, and high surge current capability in a TO-263-2L package. |
Original |
PDF
|
|
|
AK20H11K
|
|
AK Semiconductor
|
AK20H11K N-Channel Enhancement Mode Power MOSFET with 20V drain-source voltage, 110A continuous drain current, and 4mΩ typical RDS(ON) at 10V VGS, suitable for power switching applications. |
Original |
PDF
|
|
|
RA26020H14GA
|
|
JWD
|
RoHS compliant 1x2 tab-down ICMs for CAT 5/6 Fast Ethernet, supporting 10/100 or 1G speeds with 260°C peak wave solder rating, 1500Vrms isolation, and various LED configurations. |
Original |
PDF
|
|
|
SBDF20H150CTB
|
|
JCET Group
|
SBD20H150CTB and SBDF20H150CTB are 150V Schottky barrier rectifiers in TO-220-3L/TO-220F packages, featuring 20A average rectified current, 200A non-repetitive surge current, low forward voltage drop of 0.65V at 150°C, and operating junction temperature up to 175°C. |
Original |
PDF
|
|
|
SBD20H150CT
|
|
JCET Group
|
SBD20H150CT and SBDF20H150CT Schottky barrier rectifiers feature 150 V reverse voltage, 20 A average rectified current, low forward voltage drop of 0.69 V at 150 °C, guard ring die construction, and surge current capability of 200 A. |
Original |
PDF
|
|
|