100Q0 Search Results

Contextual Info: o M F O T E M in ] « ] A28F200BR-T/B 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 5V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time,

MF18M1L17ATXX

Abstract: MF18M1
Contextual Info: MITSUBISHI M E M O RY CARD D Y N A M I C R A M CARDS M F 14M 1 - L 17 A T X X MF14M1-L27ATXX MF18M1-L17ATXX MF18M1- L27ATXX 32136-bit Data Bus Dynamic R A M Card Connector Ty pe Two-piece 88-pin / , , , _ DESCRIPTION These DRAM CARDs a re developed

HC8050

Abstract: HC/FB4X TDK
Contextual Info: Multilayer Ceramic Chip Capacitors Large Capacitance HC Series FEATURES • Large capacitance with compact size. • No polarity. • Low equivalent-series-resistance ESR characteristic. • Semi-permanent service life, eliminating the need to maintain the circuits in which the capacitors are used.

Contextual Info: 100Q05CB/RB/DB OM100Q15CB/RB/DB OM100Q30CB/RB/DB OM100Q50CB/RB/DB OM100Q70CB/RB/DB OM100Q10CB/RB/DB OM100Q20CB/RB/DB OM100Q40CB/RB/DB OMIOOQ6OCB/RB/DB OM100Q80CB/RB/DB 100 AMP ULTRA FAST CENTER-TAP IN HERMETIC ISOLATED POWER BLOCK PACKAGE 100 A m p . 50 To 800 Volt High Power

power diode with piv of 30v

Contextual Info: 100Q05CB/RB/DB OM100Q15CB/RB/DB OM100Q30CB/RB/DB OMIOOQSOCB/RB/DB OM100Q70CB/RB/DB OM100Q1OCB/RB/DB OM100Q20CB/RB/DB OM100Q40CB/RB/DB OMIOOQ6 OCB/RB/DB OMIOOQ8OCB/RB/DB 100 AMP ULTRA FAST CENTER-TAP IN HERMETIC ISOLATED POWER BLOCK PACKAGE 100 Amp, 50 To 800 Volt High Power

26 SIGNETICS

Contextual Info: S ig n e t ic s PLS173 Field-Programmable Logic Array 22x42x10 Military Application Specific Products Slgnetlcs Programmable Logic Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The PLS173 is a two-level logic element consisting of 42 AND gates and 10 OR

Contextual Info: T -1 % In G a A lP U ltra B rig h t LED P e rfo rm a n c e Ultra B right L E D s High TLSH180P Product Features • InGaAlP Technology • T-1V4 5 mm Package • High Intensity Red Light (5\.p = 623 nm) Emission • Water Clear Lens • Narrow Radiation Pattern

Contextual Info: SN54LVT18652, SN54LVT182652, SN74LVT18652, SN74LVT182652 3.3-V ABT SCAN TEST DEVICES WITH 18-BIT TRANSCEIVERS AND REGISTERS SCBS312A- MARCH 1 9 9 4 - REVISED JULY 1994 Members of the Texas Instruments SCOPE Family of Testability Products Compatible With the IEEE Standard

Contextual Info: AMD A m 2 9 F 0 1 6 B 15 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology

Am29F0328

Abstract: ad t809
Contextual Info: F R E U M 1NARV AMD£I Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

Contextual Info: THIS DRAWING AND THE INFORMATION IS THE PROPERTY OF QUALITY THERMISTOR AND ALL UNAUTHORIZED USE AND REPRODUCTION IS PROHIBITED 4 3 - 2 9 “ 02 E BC 3 10-18-0] D JH B 7-2 5 -0 0 C JH I 9-2 8 -9 9 A JH NO , DATE REVISION APPROVAL S P E C I F I C A T I O N S _

Contextual Info: EIE D • t iE 4^025 0 0 1 b 3 3 0 =5 ■ MITSUBISHI LSIs M 5M 482128J - 8. - 10. -12 ^ M I T S U B I S H I ME MOR Y/ AS IC 1 0 4 8 5 7 6 -B IT DUAL-PORT DYNAMIC RAM T-46-23-17 DESCRIPTION The Mitsubishi M5M482128J is a high speed 1048576-bit Dual Port Dynamic Memory equipped with a 128K x 8

68w11

Abstract: marking code 27E SOT 23 sot23 marking code tab MARKING 27E marking code 27e 000012a kn sot23 68-W11 sot-23 Marking yr F 7389
Contextual Info: 3 i a m a b ooooizfi 4 • 57E D ELECTRO-FILMS INC The Electro-Films, Inc. Micro Divider provides the optim um in precision, stability, and size for all surface m ount potential divider applications. It is molded in an SOT-23 style package with total resistor

T600F

Abstract: T600
Contextual Info: G CORP Û1 DE • O O E ^ E b 0D0ST54 E Typenreihe/Type range_ T 6 0 0 F _ 600_ 800_1000_ 1100_ 1200_ 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values

an 503 hall sensor

Abstract: LT1074 design manual MBB745 LT1074/LTPG e3 74c122 ic 7490 pin diagram 3055 5C pnp transistor IC 92112 m8r745 3055 5c pnp
Contextual Info: Lirm Application Note 35 TECHNOLOGY August 1989 Step Down Switching Regulators Jim Williams A substantial percentage of regulator requirements in­ volve stepping down the primary voltage. Although linear regulators can do this, they cannot achieve the efficiency

Contextual Info: I Ordering number : EN%5085 j CMOS LSI LC322271 J, M-80 J SA%YO 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC322271J, M is a CMOS dynamic RAM operating on a single 5 V power source and having a 131072 words

Contextual Info: CONDENSATEURS CERAMIQUE MOULES CLASSE 2 TCN 52 . TCN 53 . TCN 54 MOLDED CERAMIC CAPACITORS IASS 2 Modele normal ise l Standard model A G£~v3 ICN 53 . i CN 54 Appellation commerciaie/ Commercial type 4 TCN 52 TCN 52 R TCN 53 TCN 53 R TCN 54 !TCN 54R ~o

t9842b

Abstract: ED6A fa840 FD3405 2620D BBB02 dpc-B CB-C7
Contextual Info: TOSHIBA T6B64 TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T6B64 8-BIT CONTROLLERS FOR CONSUMER ELECTRONICS PRODUCTS 1. INTRODUCTION The T6B64 is a low-power, high-performance 8-bit Controllers for Consumer Electronics Products that has been developed using Toshiba's CMOS silicon gate