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IC BD 540 LYS

Abstract: 32T0 BD 540 LYS m-56a Hitachi DSA0088 HB56A169 D-83622 C42S
Contextual Info: HB56A169BR-6B/7B/8B Preliminary 16,777,216-Word x 9-Bit High Density Dynamic RAM Module Rev. 0 Jul. 17, 1995 The HB56A169 is a 16M x 9 dynamic RAM module, mounted 9 pieces of 16-Mbit DRAM HM5116100BS sealed in SOJ package. An outline of the HB56A169 is 30-pin single inline package. Therefore, the HB56A169 makes

Contextual Info: KSD1417 NPN SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSB1022 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol

Contextual Info: H IT A C H I/ NCU/MPU SGE D • MMTbEDM GÜ31DM4 Section 1. FPU Features • • 3TE ■ H I T 3 *' ^ ' /2'°r Floating-point performance (at 20 MHz, when coupled to an H32/200) — Add/subtract 0.5 |is — Multiply 0.45 |is — Divide 1.5 |is Natural extension of the H32 architecture

HB56A168

Abstract: Hitachi DSA0088
Contextual Info: HB56A168BR-6B/7B/8B Preliminary 16,777,216-Word x 8-Bit High Density Dynamic RAM Module Rev. 0 Jul. 17, 1995 The HB56A168 is a 16M x 8 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5116100BS sealed in SOJ package. An outline of the HB56A168 is 30-pin single inline package. Therefore, the HB56A168 makes

HB56AW232D-7b

Abstract: HM51W17800B s9218 HB56AW232D-8B Hitachi DSA0068
Contextual Info: HB56AW232D Series 2,097,152-Word x 32-Bit High Density Dynamic RAM Module Rev. 1 May. 14, 1995 The HB56AW232D is a 2M x 32 dynamic RAM Small Outline Dual In-line Memory Module S.O. DIMM , mounted 4pieces of 16-Mbit DRAM (HM51W17800BTT) sealed in TSOP package.

74ABT16244

Abstract: HB56D472EJ HM5116400AS Hitachi DSA0088
Contextual Info: HB56D472EJ -6AC/7AC/8AC Preliminary 4,194,304-Word x 72-Bit High Density Dynamic RAM Module Rev. 0.1 Jun. 19, 1995 The HB56D472EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

S13C

Contextual Info: se MIKRDN Ifrm s maximum values for continuous operation V bsm 300 A V rr m Fast Diode Modules SKKD 160 M Ifa v (sin. 180; Tease = 85 °G; 50 Hz) 160 A V 800 SKKD 160 M 08 1000 SKKD 160 M 10 1200 SKKD 160 M 12 1400 SKKD 160 M 14 Symbol Conditions If a v

Contextual Info: DASH MODEL NO NO -3 PL 4 -W 3 PLW4 PIN DIA CABLE ACCOMMODATED .0 7 0 RCA .0 9 0 (W.E. CO.) A DIM DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. AND SHALL NOT BE DISCLOSED, COPIED OR USED FOR PROCUREMENT ORMANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION.

Contextual Info: SELECTABLE-OUTPUT PLL OSCILLATOR MG-7010 • Can output one CPU frequency among 15 selections. • Reflowable, high-density mounting-type SMD. • Provided with output enable and stand-by function to allow low current consumption. • Using C-MOS IC allows low current consumption and