100N03M Search Results
100N03M Price and Stock
Infineon Technologies AG BSZ100N03MSGATMA1MOSFET N-CH 30V 10A/40A 8TSDSON |
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BSZ100N03MSGATMA1 | Digi-Reel | 237 | 1 |
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BSZ100N03MSGATMA1 | Reel | 14 Weeks | 5,000 |
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BSZ100N03MSGATMA1 | 9,657 |
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BSZ100N03MSGATMA1 | 24,084 | 1 |
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BSZ100N03MSGATMA1 | 1 |
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BSZ100N03MSGATMA1 | 15 Weeks | 5,000 |
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Infineon Technologies AG BSC100N03MSGATMA1MOSFET N-CH 30V 12A/44A TDSON |
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BSC100N03MSGATMA1 | Cut Tape | 86 | 1 |
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BSC100N03MSGATMA1 | Reel | 5,000 |
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BSC100N03MSGATMA1 | Cut Tape | 1 |
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BSC100N03MSGATMA1 | 57,971 | 1 |
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BSC100N03MSGATMA1 | 3,053 |
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BSC100N03MSGATMA1 | Cut Tape | 4,729 | 0 Weeks, 1 Days | 1 |
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BSC100N03MSGATMA1 | 2,853 |
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Infineon Technologies AG BSZ100N03MS GMOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3M |
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BSZ100N03MS G | 1,190 |
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Infineon Technologies AG BSZ100N03MSGATMA1 (OPTIMOS 3 M)Mosfet, N-Ch, 30V, 40A, Pg-Tsdson-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSZ100N03MSGATMA1 |
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BSZ100N03MSGATMA1 (OPTIMOS 3 M) | Cut Tape | 1 |
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Infineon Technologies AG BSC100N03MSGOPTIMOS 3 M-SERIES POWER-MOSFET Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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BSC100N03MSG | 8,920 |
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BSC100N03MSG | 6,110 |
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BSC100N03MSG | 200 |
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100N03M Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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100N03M
Abstract: IEC61249-2-21 JESD22 BSZ100N03MS G
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BSZ100N03MS IEC61249-2-21 100N03M 100N03M IEC61249-2-21 JESD22 BSZ100N03MS G | |
BSC100N03MS
Abstract: JESD22 BSC100N03MS G 100N03M
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BSC100N03MS 100N03MS JESD22 BSC100N03MS G 100N03M | |
BSC100N03MS GContextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 10 mΩ V GS=4.5 V 12 ID • N-channel |
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BSC100N03MS 100N03MS BSC100N03MS G | |
100N03M
Abstract: JESD22 BSZ100N03MS G 100n03 bsz100n03ms
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BSZ100N03MS 100N03M 100N03M JESD22 BSZ100N03MS G 100n03 | |
Contextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V VGS=10 V 10 mW VGS=4.5 V 12 ID • N-channel |
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BSC100N03MS IEC61249-2-21 100N03MS | |
100n03Contextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application Notebook, VGA, POL V DS R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 10 mΩ V GS=4.5 V 13 ID 40 |
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BSZ100N03MS 100N03M 100n03 | |
Contextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 10 mΩ V GS=4.5 V 13 ID 40 |
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BSZ100N03MS 100N03M | |
Contextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 10 mΩ V GS=4.5 V 12 ID • N-channel |
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BSC100N03MS 100N03MS | |
100n03
Abstract: 100N03M BSC100N03MS 100N03MS IEC61249-2-21 JESD22 BSC100N03
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BSC100N03MS IEC61249-2-21 100N03MS 100n03 100N03M 100N03MS IEC61249-2-21 JESD22 BSC100N03 |