100N03M Search Results
100N03M Price and Stock
Infineon Technologies AG BSZ100N03MSGATMA1Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8 |
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BSZ100N03MSGATMA1 | 1 |
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BSZ100N03MSGATMA1 | Tape & Reel | 52 Weeks | 5,000 |
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BSZ100N03MSGATMA1 | Cut Tape | 5 | 1 |
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| BSZ100N03MSGATMA1 | Tape & Reel | 5 | 100 |
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BSZ100N03MSGATMA1 | 22,084 | 1 |
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BSZ100N03MSGATMA1 | 53 Weeks | 5,000 |
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BSZ100N03MSGATMA1 | 27,380 |
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Infineon Technologies AG BSC100N03MSGATMA1MOSFET N-Channel 30V 12A (Ta), 44A (Tc) 8-SON T/R |
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BSC100N03MSGATMA1 | 73,242 | 1 |
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Infineon Technologies AG BSC100N03MSGOPTIMOS 3 M-SERIES POWER-MOSFET Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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BSC100N03MSG | 8,920 |
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BSC100N03MSG | 200 |
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Infineon Technologies AG BSZ100N03MSGIN STOCK SHIP TODAY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ100N03MSG | 40 |
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Infineon Technologies AG BSZ100N03MSN-Channel 30V 40A 35W Surface Mount TSDSON-8 |
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BSZ100N03MS | 30,000 |
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100N03M Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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100N03M
Abstract: IEC61249-2-21 JESD22 BSZ100N03MS G
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bsz100n03msiec61249-2-21100n03mjesd22+1 | |
BSC100N03MS
Abstract: JESD22 BSC100N03MS G 100N03M
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bsc100n03ms100n03msjesd22bsc100n03ms g+1 | |
BSC100N03MS GContextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 10 mΩ V GS=4.5 V 12 ID • N-channel |
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bsc100n03ms100n03msbsc100n03ms g | |
100N03M
Abstract: JESD22 BSZ100N03MS G 100n03 bsz100n03ms
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bsz100n03ms100n03mjesd22bsz100n03ms g+1 | |
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Contextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V VGS=10 V 10 mW VGS=4.5 V 12 ID • N-channel |
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bsc100n03msiec61249-2-21100n03ms | |
100n03Contextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application Notebook, VGA, POL V DS R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 10 mΩ V GS=4.5 V 13 ID 40 |
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bsz100n03ms100n03m100n03 | |
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Contextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 10 mΩ V GS=4.5 V 13 ID 40 |
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bsz100n03ms100n03m | |
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Contextual Info: 100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 10 mΩ V GS=4.5 V 12 ID • N-channel |
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bsc100n03ms100n03ms | |
100n03
Abstract: 100N03M BSC100N03MS 100N03MS IEC61249-2-21 JESD22 BSC100N03
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bsc100n03msiec61249-2-21100n03ms100n03+3 |