100ITI Search Results

CEM8958

Contextual Info: mu CEM8958 PRELIMINARY Dual Enhancement Mode Field Effect Transistor^ and P Channel FEATURES • 3 0 V , 5 .3 A , Rds on)=35iti Q @Vgs=10V. Di R ds(on)=50iti Q @Vgs=4.5V. Di D2 D2 -30V, -4.0A , RDS(ON)=65m Q @Vgs=-10V. R ds(on)=100iti Q @Vgs=-4.5V. • Super high dense cell design for extremely low R d s (o n >.

FMM-1718

Abstract: FMMT720 FMM1717 1DA SOT23 FMMT617 FMMT618 FMMT619 FMMT717 FMMT718 FMMT722
Contextual Info: E-1 I H ‘“”’’’”T’’’’” I I THERMAL CHARACTERISTICS AND DERATING INFORMATION .60 -40 -20 ?0 40 60 AMBIENT TEMPERATURE DEG DERATING 00 >00 120 140 160 CELSIUS CURVE 200 : l.1 150 s z < !7J 100 m s 2 z $ !- 50 O.lms 1ms 1Oms PuLSE MAXIMUM

Contextual Info: fS Ì H A R R HC5523 I S S E M I C O N D U C T O R Subscriber Line Interface Circuit August 1996 Features • Description Dl Monolithic High Voltage Process • Programmable Current Feed 20mA to 60mA • Programmable Loop Current Detector Threshold and Battery Feed Characteristics

DAC8043AIFS

Abstract: DAC ic 0800 pin diagram 136 8PIN DAC8043A
Contextual Info: ANALOG DEVICES 12-Bit, Serial-Input Multiplying DAC DAC8043A Preliminary FUNCTIONAL DIAGRAM FEATURES Compact SO-8 & TSSOP-8 Package 12-Bit Accurate +5V Operation @ <10uA Fast 3-Wire Serial Input Fast 1 |is Settling Time >1MHz 4-Quadrant Multiply BW Pin-for-Pin Upgrade for DAC8043

NE572N

Abstract: NE572 limiter ne572 NE572D SA572 SA572D SA572F SA572N rectifier schematic BRIGADE RECTIFIER
Contextual Info: NE/SA572 Programmable Analog Compandor Product Specification DESCRIPTION The NE572 is a dual-channel, high-per­ formance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to de­

Contextual Info: > M > J X iy k i High-Speed, Low-Distortion, Differential Line Receivers The MAX4144/MAX4145/MAX4146 differential line receivers offer unparalleled high-speed, low-distortion performance. Using a three op-amp instrumentation amplifier architecture, these ICs have fully symmetrical

Contextual Info: central" CMPTA29 Semiconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

2SC2824

Abstract: 2SA1184 AC46C
Contextual Info: TOSHIBA { D I S C R E T E / O P T Oî 9097250 TOSHIBA DlF| T O ^ S O 56C < 0 I S C R E T E /O P T O 07606 DD07t.Gt D r - 3 3 - 0 7 2SC2824 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES:

ci pal 007

Abstract: panasonic color tv wiring diagram PAL 007 AN5630 5630n 5630 AN561 AN5610N AN5620X AN5630N
Contextual Info: AN561ON A N 5 6 1 ON / C o l o r T V Video, Chrominance — S i gn al P r o c e s s i n g Circ uit I St S/D escription AN 5610 N f i n- ? ti tz I 5.08 ma x. 6.5max. , ij y — f ffll U n i t 1 mm 2.8min. m» * m Bj m x -t „ iS/F eatu res • AN 5620 X, AN 5630 N

Contextual Info: Central CMPTA29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

microwave oscillator

Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Contextual Info: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n ­ HIGH fS