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100B2R0BP Datasheets (2)

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American Technical Ceramics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
100B2R0BP500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 2PF 500V P90 1111	Original	PDF	908.54KB
100B2R0BP500XT1K		American Technical Ceramics	Ceramic Capacitor 2PF 500V P90 1111	Original	PDF	875.17KB

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Kyocera AVX Components


Kyocera AVX Components 100B2R0BP500XTV1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B2R0BP500XTV1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B2R0BP500XTV1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B2R0BP500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B2R0BP500XT1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B2R0BP500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 $7.09 10000 $7.09	Buy Now
Kyocera AVX Components 100B2R0BPN500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B2R0BPN500XT1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B2R0BPN500XT1K	Tape w/Leader		18 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B2R0BPN500XC100 MLC A/B/R - Waffle Pack (Alt: 100B2R0BPN500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B2R0BPN500XC100	Waffle Pack		18 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B2R0BP500XC100 MLC A/B/R - Waffle Pack (Alt: 100B2R0BP500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B2R0BP500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 $7.09 1000 $7.09 10000 $7.09	Buy Now
Richardson RFPD	100B2R0BP500XC100				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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100B2R0BP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mrf5s21090 Contextual Info: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	mrf5s21090h mrf5s21090hr3 mrf5s21090hsr3 mrf5s21090	PDF
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21090LR3 and MRF5S21090LSR3 replaced by MRF5S21090HR3 and MRF5S21090HSR3. H suffix indicates lower thermal resistance package. MRF5S21090LR3 MRF5S21090LSR3	Original	mrf5s21090l/d mrf5s21090lr3 mrf5s21090lsr3 mrf5s21090hr3 +2mrf5s21090hsr3 84tion	PDF
100B2R0BP Abstract: MRF5S21090 dbc 4223 MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 Contextual Info: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L	Original	mrf5s21090l/d mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 +3100b2r0bp mrf5s21090 dbc 4223	PDF
AN1955 Abstract: CDR33BX104AKWS MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	mrf5s21090h mrf5s21090hr3 mrf5s21090hsr3 an1955 +2cdr33bx104akws mrf5s21090	PDF
MOTOROLA 381 equivalent Abstract: 381 motorola AN1955 MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090LR3 MRF5S21090LSR3 mrf5s21090 Z-15 Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21090LR3 and MRF5S21090LSR3 replaced by MRF5S21090HR3 and MRF5S21090HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21090LR3	Original	mrf5s21090l/d mrf5s21090lr3 mrf5s21090lsr3 mrf5s21090hr3 +7mrf5s21090hsr3 mhz3-20-1 motorola 381 equivalent 381 motorola an1955 mrf5s21090 z-15	PDF
motorola rf power transistors mtbf Abstract: mrf5s21090 RM73B2B Contextual Info: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	mrf5s21090l/d mrf5s21090lr3 mrf5s21090lsr3 motorola rf power transistors mtbf +2mrf5s21090 rm73b2b	PDF
RM73B2B Abstract: MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 AN1955 mrf5s21090 100B7R5JP Contextual Info: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	mrf5s21090h mrf5s21090hr3 mrf5s21090hsr3 rm73b2b +3an1955 mrf5s21090 100b7r5jp	PDF
MRF5S21090 Abstract: 100B1R2BP Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L	Original	mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 mrf5s21090 +1100b1r2bp	PDF
95F4579 Abstract: Resistor mttf mrf5s21090 Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	mrf5s21090hr3 mrf5s21090hsr3 95f4579 resistor mttf +1mrf5s21090	PDF
AN1955 Abstract: MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HSR3	Original	mrf5s21090h/d mrf5s21090hr3 mrf5s21090hsr3 an1955 +1mrf5s21090	PDF
AN1955 Abstract: MRF5S21090LR3 MRF5S21090LSR3 mrf5s21090 Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3	Original	mrf5s21090l/d mrf5s21090lr3 mrf5s21090lsr3 an1955 +1mrf5s21090	PDF
smd diode J476 Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 Contextual Info: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	dl110/d smd diode j476 viper l2a rohs viper l2a +7mmic amplifier marking code n10 mosfet j279 mrf 966 mesfet pin diode macom spice model ncr 2400 sma datasheet datasheet mrf 899 smd wb3	PDF