100A1 Search Results

175-PIN

Contextual Info: 175 PIN PLASTIC PGA A P Q B Bottom View D C U T 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 G H I J Q P NM L K J H G F E D C B A K L φM M E F X175S-100A1 NOTE Each lead centerline is located within φ 0.5 mm ( φ 0.020 inch) of its true position (T.P.) at maximum material condition.

Raychem WCD 2015

Abstract: 100A0111 100A1111
Contextual Info: SPECIFICATION CONTROL DRAWING TITLE 100A1111 Date ONE CONDUCTOR CABLE, HALOGEN FREE, SHIELDED, JACKETED, 600 VOLT, 105°C 2-4-10 Revision 6 This specification sheet forms a part of the latest issue of Raychem Specification WCD 2015. SHIELD - TIN-COATED COPPER

j 476

Contextual Info: 84 PIN CERAMIC PGA Glass Sealed A T P B Q (Bottom View) 12 S 11 10 9 8 7 6 D C U R 5 4 3 2 1 M L K J H G F E D C B A G Index mark I H J Index mark K L φM M E F X84RH-100A1 NOTE Each lead centerline is located within φ 0.254 mm ( φ 0.010 inch) of its true position (T.P.) at

D3332

Contextual Info: 64 PIN CERAMIC QFP 14 x 20 (FOR ES) A B F 64 D 33 32 C 51 52 20 19 1 G H J M Q K (Bottom View) X64B-100A1-1 T ITEM U V MILLIMETERS INCHES A 24.7 ± 0.4 0.972+0.017 –0.016 B 20.0 0.787 C 14.2 0.559 D 18.9 ± 0.4 0.744 ± 0.016 F 1.1 0.043 G 1.0 0.039 H

Contextual Info: Packing Name NEC Tray LA-029-A 84 pin Ceramic PGA Glass Sealed A T P B Q (Bottom View) 12 S 11 10 9 8 7 6 D C U R 5 4 3 2 1 M L K J H G F E D C B A Index mark I G H J Index mark K L φM M E F X84RH-100A1 NOTE Each lead centerline is located within φ 0.254

Contextual Info: Packing Name NEC Tray LA-030 72 pin Ceramic PGA Seam Weld A (Bottom View) 11 10 9 8 7 D 6 5 4 3 2 1 L K J Index mark G H J I X72R-100A1 EIAJ CODE Weight (Reference Value) E D C B A E φM M F NOTE Each lead centerline is located within φ 0.254mm ( φ 0.010 inch) of its true position (T.P.) at

Contextual Info: Packing Name NEC Tray LA-099 175 pin Plastic PGA A P Q B Bottom View D C U T 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 G H I J Q P NM L K J H G F E D C B A K L φM M E F X175S-100A1 NOTE Each lead centerline is located within φ 0.5 mm ( φ 0.020 inch) of its true position (T.P.) at

Continental RSDA

Abstract: AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC
Contextual Info: RS Series Single Phase DIN Rail Mount Relays FEATURES/BENEFITS • Automatic shutdown on • • • • • overtemperature Built-in, replaceable, semiconductor fuse Integrated heat sink Mounts on DIN rail or panel Optically isolated Touch safe • LED indicator

915 MHz RFID

Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
Contextual Info: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz

MX0912B250Y

Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

AWT1921S11

Abstract: AWT921 SSOP-28
Contextual Info: AWT921 Integrated High Power Amp 900 MHz PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • High output power levels High Efficiency True Surface Mount Package with Integrated Heat Slug Internal Bias Circuit Requiring Nominal Input Voltages +10% Low Cost

epsilam 10

Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

2E816

Abstract: 2d116 2e016 datasheet M35080FP 2F216 AC323
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

philips ferrite 4330-030

Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors

FPT-15A

Abstract: fpt-1 FPT-10A FPT-12A
Contextual Info: NOTES: UNLESS OTHERWISE SPECIFIED. 1. BREAKING CAPACITY: 0.5A-15A IR 100A-125V REV ECO 1 - DESCRIPTION INITIAL RELEASE DATE BY 10/11/02 - 2. MATERIALS: BODY- THERMOPLASTIC, UL94V0 FLAMMABILITY RATING TERMINALS: TIN PLATED BERYLLIUM COPPER 3. DIMENSIONS ARE IN INCHES[mm]

tl741

Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
Contextual Info: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: S G S - T H O S I M S O N S D 1 89 5 -0 3 m . RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P o u t = 15 W MIN. WITH 9.2 dB GAIN PIN CONNECTION

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

1N1190

Abstract: PBY306 1N3768 1N1183 1N1183R 1N1184 1N3766 PBY301 PBY302 SW11
Contextual Info: 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2005-01-31 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class

transistor GT 1081

Abstract: MRFG35010AR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for

GL 7812

Abstract: ATC 2603 LDMOS NEC
Contextual Info: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:

Contextual Info: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz